• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.669-676
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• 2020

The purpose of this study was to analyze the changes in the values of Hounsfield Unit (HU) according to the changes in monoenergy (keV) and dilution ratio of the contrast agent, using the spectral CT. Spectral CT was used as the testing device, while 20 cc syringe phantom was used to set a total of six dilution ratios of the contrast agent: 8:2, 7:3, 6:4, 5:5, 4:6, and 3:7. Here, the non-ionic iodine solution (350 mg/ml) was used as a contrast agent. The syringe axial image was reconstructed by adjusting the obtained data on nine MonoE levels; 40 keV, 45 keV, 50 keV, 55 keV, 60 keV, 65 keV, 70 keV, 75 keV, and 80 keV. The HU values were measured at the three points of the reconstructed syringe axial image. The measurements were taken 1,620 times in total. In the analysis of the HU values according to the changes in keV and dilution ratio of the contrast agent, the highest and lowest HU values were obtained from dilution ratio 8:2 and dilution ratio 3:7, respectively, across every MonoE in the comparison of HU according to dilution ratio per MonoE (p<0.05), while the highest and lowest HU values were obtained from 40 keV and 80 keV, respectively, across all dilution ratios in the comparison of HU according to MonoE per dilution ratio (p<0.05). For the correlation per each parameter, a negative correlation of -15.014 ± 0.298 was found for HU per keV (R²=0.519) and a negative correlation of -61.372 ± 3.608 was found for HU per dilution ratio (R²=0.152) (p<0.05). To conclude, an increase in keV or dilution ratio of the contrast agent was shown to decrease the HU, and the findings in this study are anticipated to serve as the basic data in the research of HU-related parameters in Spectral CT.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.706-711
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• 1986

The AgGa1-xInxSe2 films are deposited by a flash evaporation method onto pyrex glass substrates at temperatures between 5\ulcorner and 360\ulcorner. The single crystalline films which have X-ray diffraction peak of only (112) plane are preared at substrate temperature above 360\ulcorner. The prepared AgGa 1-xInxSe2 films are high photosensitive. The temperature coefficients of energy gap are found to be (-1.2~-4.0)x10**4 eV/K and (-3.1~-5.2)x10**-4 eV/K, and that of peak energy of spectral photoresponse curve are found to be (-1.1 ~ -3.0)x10**-4 eV/K(50K~100K) and (-2.4~-5.1)x10**-4 eV/K(100K~300K).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.317-326
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• 2016

In this paper, a logic eFuse (electrical Fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) using only logic transistors to reduce the development cost and period of OTP memory IPs is designed. To secure the reliability of other IPs than the OTP memory IP, a higher voltage of 2,4V than VDD (=1.5V) is supplied to only eFuse links of eFuse OTP memory cells directly through an external pad FSOURCE coming from test equipment in testing wafers. Also, an eFuse OTP memory cell of which power is supplied through FSOURCE and hence the program power is increased in a two-dimensional memory array of 128 rows by 8 columns being also able to make the decoding logic implemented in small area. The layout size of the designed 1kb eFuse OTP memory IP with the Dongbu HiTek's 110nm CIS process is $295.595{\mu}m{\times}455.873{\mu}m$ ($=0.134mm^2$).

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.63-68
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• 1996

열형광 선량계(TLD)를 사용한 피부 선량평가는 베타선의 에너지를 구분함으로 정확히 평가된다. 이는 차폐체에 의한 감쇄효과를 이용하는 방법으로 본 논문에서는 7개의 두께가 다른 알루미늄 차폐체를 사용하였고, TLD로는 미국 Teledyne Isotopes사의 LiF$_{7}$ 선량계를 채택하였다. 비상 베타 선량계의 베타선에 대한 특성실험을 위해 한국 원자력연구소가 확보 하고 있는 PTB 표준선원인 $^{90}$ Sr/ $^{90}$ Y (E$_{max}$=2.27MeV, E$_{avg}$=0.8MeV), $^{204}$Tl(E$_{max}$=0.76MeV, E$_{avg}$=0.26MeV), $^{147}$ Pm (E$_{max}$= 0.225MeV, E$_{avg}$=0.06MeV)에 대한 조사를 하였다. 이런 결과로 비상 베타 선량계의 표준 베타선원에 대한 보정계수와 소자별 반응비를 구할 수 있었고, 이것을 이용하여 미지의 베타선원에 대하여 정확한 선량평가를 하기위한 알고리즘을 개발하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.534-540
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• 2006

Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.130-135
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• 2000

We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1321-1321
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• 2006

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.270-272
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• 2016

제일원리 전자구조 계산을 통하여 현재 활발하게 연구가 진행되고 있는 MoS2 layer에 다양한 전이금속 물질을 치환하여 수소 흡착에너지를 구해보고, 수소 발생 촉매로서 적합한 구조를 구해 보았다. 또한 계산된 density of state의 형태를 분석하여 수소발생반응의 가능성을 알아보았다. 계산 결과, MoS2 layer의 경우 ground states에서 약 2.53eV의 흡착에너지를 가졌고, Ge과 Ir을 치환한 구조에 경우에 대해서는 각각 0.02eV와 -0.12eV로 계산되었다.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.214-216
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• 2013

The atomic and electronic properties of molybdenum disurfide ($MoS_2$) nanostructures are investigated through density functional theory (DFT) calculations. We find that the band gap is indirect (about 1.79 eV) and direct (about 1.84 eV) in GGA for 2-dimensional $MoS_2$ in our calculations. On the other hand, 1-dimensional armchair nanoribbons have semiconductor properties (band gap is about 0.11~0.28 eV), while 1-dimensional zigzag nanoribbons are metallic.