• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• 통합자연과학논문집
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• 제9권4호
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• pp.255-260
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• 2016

The crystal structure of the saliciline derivatives N,N'-bis(3-chloro-2-methylsalicylidene)-1,4-butanediamine ($C_{20}H_{22}Cl_2N_2O_2$) has been determined from single crystal X-ray diffraction data. In the title compound crystallizes in the triclinic space group $P{\bar{i}}$ with unit cell dimension $a=4.6085(3){\AA}$, $b=5.9747(3){\AA}$ and $c=5.9747(3){\AA}$ [${\alpha}=83.889(4)^{\circ}$, ${\beta}=86.744(5)^{\circ}$ and ${\gamma}=82.085(5)^{\circ}$]. The title compound is essentially planar conformation. The compound lies across a crystallographic inversion centre and adopts E configurations with respect to the C-N bonds. The crystal packing of the molecules of compound is stabilized through weak O-H...N intra molecular interactions

• 열처리공학회지
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• 제6권3호
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• pp.152-158
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• 1993

Effects of oxide film which is grown by heat treatment on the hydrogen embrittlement (HE) of 17-4 PH stainless steel were investigated. Specimems were tensile tested after cathodic hydrogen charging and the be haviors of HE were evaluated from the elongation change. It was found that specimems solution treated at $1040^{\circ}C$ for 1/2hour showed best retardation ability to HE for both aging conditions i.e. $480^{\circ}C{\times}1hr$ and $620^{\circ}C{\times}4hrs$. X-ray and Auger study revealed that the major composition of oxide films are $Cr_2O_3$ and $CuCr_2O_4$.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.86-89
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• 2004

The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.

• 대한수학회지
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• 제47권6호
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• pp.1147-1165
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• 2010

In this paper we compare a torsion free sheaf F on $P^N$ and the free vector bundle $\oplus^n_{i=1}O_{P^N}(b_i)$ having same rank and splitting type. We show that the first one has always "less" global sections, while it has a higher second Chern class. In both cases bounds for the difference are found in terms of the maximal free subsheaves of F. As a consequence we obtain a direct, easy and more general proof of the "Horrocks' splitting criterion", also holding for torsion free sheaves, and lower bounds for the Chern classes $c_i$(F(t)) of twists of F, only depending on some numerical invariants of F. Especially, we prove for rank n torsion free sheaves on $P^N$, whose splitting type has no gap (i.e., $b_i{\geq}b_{i+1}{\geq}b_i-1$ 1 for every i = 1,$\ldots$,n-1), the following formula for the discriminant: $$\Delta(F):=2_{nc_2}-(n-1)c^2_1\geq-\frac{1}{12}n^2(n^2-1)$$. Finally in the case of rank n reflexive sheaves we obtain polynomial upper bounds for the absolute value of the higher Chern classes $c_3$(F(t)),$\ldots$,$c_n$(F(t)) for the dimension of the cohomology modules $H^iF(t)$ and for the Castelnuovo-Mumford regularity of F; these polynomial bounds only depend only on $c_1(F)$, $c_2(F)$, the splitting type of F and t.

• Advances in Energy Research
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• 제2권2호
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• pp.97-104
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• 2014

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

• 전자공학회논문지A
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• 제29A권10호
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• pp.17-23
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• 1992

A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.244-252
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• 2002

The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• 대한한의학회지
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• 제29권4호
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• pp.68-82
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• 2008

Objective: The purpose of our study was to show the effects of Hwalhyulmaksung-bang (Huoxiemoxing-fang, HHMSB) treatment on cBSA-induced in MN Mouse Model. Methods: We divided the 20 mice into 4 groups. One group, named NR, was not treated. The second group, named CT, was treated with cBSA (7mg/kg i.p) only. The third group, named HH-250, was treated with cBSA (7mg/kg i.p) and HHMSB extract (250mg/kg, p.o). The fourth group, named HH-500, was treated with cBSA (7mg/kg i.p) and HHMSB extract (500mg/kg, p.o). 4 weeks after cBSA, proteinuria, serum albumin, total cholesterol, serum creatinine, BUN, total cell number of spleen and kidney of all groups were measured. CD3e+/CD19+ and CD4+/CD8 cells ratio of peripheral blood, kidney and spleen of all groups were analyzed. $IL-1{\beta}$ and TNF-$\alpha$, IL-6, IgG, IgM, and IFN-$\gamma$ levels of all groups were gauged. Histological analysis of kidney tissue and immunohistochemical staining (CD4, CD8) of kidney were observed. Results: The level of proteinuria significantly decreased and serum albumin increased in the group treated with cBSA and HHMSB extract compared with the control. Total cholesterol decreased but not significantly. CD3e+/CD19cells ratio of peripheral blood is decreased, but CD4+/CD8cells ratio has no significancy. CD3e+/CD19+ and CD4+/CD8 cells percentage of kidney and spleen has no significancy. Level of $IL-1{\beta}$, IL-6 is significantly decreased, and IFN-$\gamma$ is significantly increased on HHMSB compared with control. Total IgG level significantly decreased on HHMSB compared with the control. Thickness of GBM decreased on histological analysis of kidney. Deposition of CD4 and CD8 decreased on immunohistochemical staining of kidney. Conclusions: We conclude that Hwalhyulmaksung-bang treatment may could be a useful remedy agents for treating Membranous Neuropathy(MN) induced by cationized bovine serum albumin.