• Title/Summary/Keyword: $E_{c}/I_{o}$

Search Result 882, Processing Time 0.027 seconds

Studies on The Electrochemical Properties of Oxygen adducts Tetradentate Schiff Base Cobalt(II) Complexes in DMSO (I) (DMSO용액에서 네자리 Schiff Base Cobalt(II) 착물들의 산소 첨가 생성물에 대한 전기화학적 성질에 관한 연구 (제 1 보))

  • Chjo Ki-Hyung;Jin-Soon Chung;Heui-Suk Ham;Seoing-Seob Seo
    • Journal of the Korean Chemical Society
    • /
    • v.31 no.6
    • /
    • pp.542-554
    • /
    • 1987
  • Tetradentate schiff base cobalt(II) complexes; Co(SED), Co(SND) and Co(SOPD) have been prepared, these complexes have react with dry oxygen in DMSO to form oxygen adducts cobalt(III) complexes; $[Co(SED)(DMSO)]_2O_2,\;[Co(SND)(DMSO)]_2O_2$ and $[Co(SOPD)(DMSO)]_2O_2$. It seems to be that the oxygen adducts cobalt(Ⅲ) complexes have heexa coordinated octahedral configration with tetradentate schiff base cobalt (III), DMSO and oxygen, and the mole ratio of oxygen to cobalt(II) complexes are 1 : 2, these complexes have been identified by IR-Spectra, T.G.A., magnetic susceptibilitis and elemental analysis of C.H.N. and Cobalt. The redox reaction process of Co(SED), Co(SND) and Co(SOPD) complexes was investigated by cyclic voltammetry with glassy carbon electrode in 0.1M TEAP-DMSO. The results of redox reaction process of Co(II) / Co(III) and Co(II) / Co(I) for cobalt(SED) and cobalt(SOPD) complexes and Co(II) / Co(III) process for cobalt(SND) complex are reversible process but Co(II) / Co(I) process of Cobalt(SND) complex is irreversible, and oxygen adduct complexes to quasi reversibly with oxygen should be very closed related to the redox potentials of range, $E_{pc}$ = -0.80~-0.89V and $E_{pa}$ = -0.70~-0.76V.

  • PDF

AN UPDATE ON THE MOPRA SOUTHERN GALACTIC PLANE CO SURVEY

  • BRAIDING, CATHERINE;BURTON, MICHAEL G.
    • Publications of The Korean Astronomical Society
    • /
    • v.30 no.2
    • /
    • pp.103-105
    • /
    • 2015
  • The 22 m diameter Mopra telescope in Australia is being used to undertake an improved survey of the CO J = 1-0 line at 3mm along the 4th quadrant of the Galaxy, achieving an order of magnitude better spatial and spectral resolution (i.e. 0.6 and 0.1 km/s) than the Dame et al. (2001) survey that is publically available for the Southern Galactic plane. Furthermore, the Mopra CO survey includes the four principal isotopologues of the CO molecule (i.e. $^{12}CO$, $^{13}CO$, $C^{18}O$ and $C^{17}O$). The survey makes use of an 8 GHz-wide spectrometer and a fast mode of on-the-fly mapping developed for the Mopra telescope, where the cycle time has been reduced to just 1/4 of a second. 38 square degrees of the Galaxy, from $l=306-344^{\circ}$, $b=0{\pm}5^{\circ}$ have currently been surveyed, together with additional 9 sq. deg. regions around the Carina complex and the Central Molecular Zone. We present new results from the survey (see also Burton et al., 2013, 2014). The Mopra CO data are being made publically available as they are published; for the latest release see the project website at www.phys.unsw.edu.au/mopraco.

Anticancer Compounds of Plantago asiatica L. (차전자의 항암활성성분)

  • Moon, Hyung-In;Zee, Ok-Pyo
    • Korean Journal of Medicinal Crop Science
    • /
    • v.7 no.2
    • /
    • pp.143-146
    • /
    • 1999
  • The cytotoxicity-guided fractionation of the seed of Plantago asiatica extracts led to the isolation of four compounds, responsible for the cytotoxicity against four human tumor cell lines, i. e., A431 (Human Epidermoid carcinoma), KHOS-NP (Human Osteosarcoma). SNU-1 (Human stomach carcinoma), SNU-C4 (Human large intestine carcinoma). The structure were elucidated by the phsyco chemical data: ${\beta}-sitosterol(C1)$, $cholest-5-en-3{\beta}-ol(C2)$, rutin(C3), $coumarin-7-O-{\beta}-glucopyranoside(C4)$. $IC_{50}$ values of compound C2 were 14.6, 13.5, 10.3, 17.8 ${\mu}g/ml$, and compound C3 and C4 showed activity, having $IC_{50}$ values ranging from 10.3 to 20.14 ${\mu}g/ml$.

  • PDF

Sintering and Electrical Properties of Ni-doped ZnO-Bi2O3-Sb2O3 (Ni를 첨가한 ZnO-Bi2O3-Sb2O3계의 소결과 전기적 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.11
    • /
    • pp.941-948
    • /
    • 2009
  • The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

Metal-Insulator Transition Induced by Short Range Magnetic Ordering in Mono-layered Manganite

  • Chi, E.O.;Kim, W.S.;Hong, C.S.;Hur, N.H.;Choi, Y.N.
    • Bulletin of the Korean Chemical Society
    • /
    • v.24 no.5
    • /
    • pp.573-578
    • /
    • 2003
  • The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

Throughput Analysis of DS/CDMA System Applying Packet Combining Scheme over Nakagami Fading Channel (나카가미 페이딩 채널에서 패킷결합기법을 적용한 DS/CDMA 시스템의 전송율 분석)

  • 황재문;박진수
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.7 no.1
    • /
    • pp.9-18
    • /
    • 2003
  • In this paper, we analyzed the throughput of DS/CDMA system applying packet combining scheme combined with Type- I Hybrid ARQ scheme over AWGN channel and Nakagami fading channel with RAKE receiver. As the parameter for analysis, we used number of combined packet(L), number of diversity branch$({L_c})$, fading index(m), and length of packet(N), and used CRC-12 error detection code and (2,1,3) convolutional code. As a results, we found that throughput of system over Nakagami fading channel with RAKE receiver was superior to throughput over AWGN channel, and throughput of system decreases rapidly as channel degrades when number of combined packet(L) was increased. However throughput of system with the combining scheme was achieved even at low ${E_b}/{N_o}$. Also, we found that throughput of system was increased when fading index(m) and number of diversity branch$({L_c})$ were increased, but it was decreased when number of user(K) and length of packet(N) were increased.

Effect of Sintering Temperature on Electrical Properties of $Pr_{6}O_{11}$-Based ZnO Varistors ($Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 성질에 소결온도의 영향)

  • 남춘우;류정선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.7
    • /
    • pp.572-577
    • /
    • 2001
  • The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

  • PDF

V-I Characteristics of SCT Thin Film by RF Sputtering Method (RF 스퍼터링법에 의한 SCT 박막의 전압-전류 특성)

  • 김진사;조춘남;신철기;최운식;김충혁;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.9
    • /
    • pp.745-750
    • /
    • 2000
  • The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

  • PDF

A SPEECH-PHONETIC STUDY ON THE PRONUNCIATION OF THE OPENBITE PATIENTS (개교환자의 발성에 관한 언어 음성학적 연구)

  • Kim, Ki-Dal;Yang, Won Sik
    • The korean journal of orthodontics
    • /
    • v.21 no.2 s.34
    • /
    • pp.287-307
    • /
    • 1991
  • This study aimed at examining speech defects of openbite patients, which were analized in terms of formant frequency for vowels and word pronunciation length for consonants. In addition, the upper and lower lip (perioral m.) activity was tested by the EMG. The tongue force was measured by the strain gauge, and the speech discrimination test was carried out. One experimental group and one control group were used for this study and they were respectively composed of six female openbite patients and six normal-occlusion females. Eight monophthongs, two fricatives and two affricatives were chosen for speech analysis. Speeches of the above-mentioned groups were recorded and then analized by the ILS/PC-1 software. Four hundred most frequently used monosyllables were also chosen for discrimination score. Openbite patients showed the following characteristics: 1. Abnormality in case of /a/, $/\varepsilon/$, /e/, /i/ $F_2$ and /e/, /a/ $F_1$. 2. Significantly elongated length in their pronunciation of /h/ and $/C^h/$ and somewhat elongated length also in their pronunciation of /s/ and /c/. 3. Significant upper lip activity according to the EMG test during pronunciation of the bilabial consonants. 4. Relatively weak tongue force according to the strain gauge measurement. 5. According to the speech discrimination test, high rate of misarticulation in case of (a) initial /p/ /s'/ and /ts'/, (b) /a/,$/\varepsilon/$,/e/,/je/,/o/, $/\phi/$,/jo/,/u/,/we/, and /i/ (c) final (equation omitted).

  • PDF

A Study on the Initial Stage of Sintering and the Grain Growth of ZnO in ZnO-Bi2O3 System (ZnO-Bi2O3계의 소결초기단계와 입자성장에 관한 연구)

  • 성건용;강을손;김종희
    • Journal of the Korean Ceramic Society
    • /
    • v.26 no.4
    • /
    • pp.505-513
    • /
    • 1989
  • The sintering behavior and grain growth of ZnO in 99.0mol% ZnO-1.0mol% Bi2O3 which are the basic compositions of ZnO varistor were studied. The microstructrual observation confirmed that the final sintered density was mainly determined at the initial stage of sintering, i.e. grain rearrangement and grain growth which were induced by the penetration of eutectic melts formed at eutectic temperature(74$0^{\circ}C$). But when the liquid penetration was terminated, the grain growth did not promote further densification. Activation energy of the grain growth of ZnO in the system of 99.0mol% ZnO-1.0mol% Bi2O3 was 44.8$\pm$1.8Kcal/mol.

  • PDF