• Bulletin of the Korean Chemical Society
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• 제8권1호
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• pp.6-9
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• 1987

The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.

• 분석과학
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• 제12권5호
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• pp.370-374
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• 1999

추출 크로마토그래피를 이용하여 고순도 테르븀의 선택적 분리를 시도하였다. 고정상으로 2-ethylhexyl-2-ethylhexyl phosphonic acid(HEH[EHP]) 추출수지(-100~+150 mesh), 컬럼은 ${\Phi}20{\times}530mm$를 사용하고 온도는 $50^{\circ}C$로 유지하고, 흡착 유속은 $0.2mL/cm^2{\cdot}min$, 용출유속은 $1.0mL/cm^2{\cdot}min$, 컬럼의 높이와 직경의 비는 1:15로 하였다. 용리액의 산도, 시료의 부하량 및 시료의 조성을 변화시켜 테르븀의 분리의 최적조건을 설정하였다. 그 결과, 산도는 0.6 N HCl, 부하량은 약 5%, 시료의 조성은 $Gd_2O_3(20%)+Tb_4O_7(60%)+Dy_2O_3(20%)$이었다. 그리고, ICP-AES로 테르븀의 분리수율을 구한 결과 99.99% 이었고 순도는 99.98%이었다.

• Journal of Radiation Protection and Research
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• 제31권3호
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• pp.129-134
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• 2006

한국원자력연구소에서 개발한 개인선량계용 KCT-300 소자의 기반물질인 $CaSO_4:Dy$ TL 물질에 $^6Li$ 화합물을 첨가하여 열중성자 측정용 소자 (KCT-306)를 개발하였다. 본 논문에서는 KCT-306 소자를 제작하기 위한 최적 조건을 결정하였으며 개발한 소자와 상용화된 소자의 성능을 비교하였다. $CaSO_4:Dy$ TL 분말의 낟알 크기가 $45{\mu}m$ 일 경우 KCT-306 소자가 최적의 성능을 보였으며, 소자 제작 조건은 $CaSO_4:Dy$ TL 분말과 열중성자 반응 물질로 첨가되는 $^6Li$ 화합물, 그리고 접착매질인 인(P) 화합물의 최적 함량이 각각 20-40 wt%, 50-70 wt%, 그리고 20 wt% 이었다. 동 조건으로 제작한 KCT-306/KCT-300 소자와 상용화된 열중성자 측정용 소자, TLD-600/TLD-700, TLD-600H/TLD-700H(harshaw) 와의 성능을 비교하기 위하여 중수 감속구(직경 30cm.) $^{252}Cf$ 중성자 선원으로 조사시킨 후 감도를 측정하였다. KCT-306 소자는 TLD-600H/TLD-700H에 비해 중성자 및 감마 감도는 낮지만 중성자/감마 감도비는 4배 이상됨을 확인하였고 TLD-600/TLD-700보다는 중성자 및 감마 감도와 중성자/감마 감도비가 높음을 확인하였다.

• 한국세라믹학회지
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• 제46권2호
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• pp.219-223
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• 2009

Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

• 한국세라믹학회지
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• 제28권9호
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• pp.661-666
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

• 분석과학
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• 제8권4호
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• pp.553-559
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• 1995

An extraction chromatographic method of separating rare earth impurities from high purity $Nd_2O_3$, $Sm_2O_3$, $Gd_2O_3$, $Er_2O_3$, $Dy_2O_3$ and $Yb_2O_3$ was studied by using $HCl-NH_4Cl$ as moving phase and P507 as stationary phase. After the impurities were enriched from the eluate by chelant-activated carbon, the active carbon was ashed and the ignited residue was used to prepare the sample electrode for spark source mass spectrometric determination. The impurities in 99.9999% rare earth oxide can be determined by the proposed method with recovery over 80%.

• 한국재료학회지
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• 제25권1호
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• 한국세라믹학회지
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• 제56권1호
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.83-83
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• 2006

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.