• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• 한국세라믹학회지
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• 제39권12호
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• pp.1119-1123
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• 2002

Nanostructured spinel NiZn ferrites were prepared by the sol-gel method from metal nitrate raw materials. Analyses by X-ray diffraction and scanning electron microscopy showed the average particle size of NiZn ferrite was under 50 nm. The single phase of NiZn ferrites was obtained by firing at 250${\circ}C$, resulting in nanoparticles exhibiting normal ferrimagnetic behavior. The nanostructured $Ni_{1-X}Zn_XFe_2O_4$ (x=0.0∼1.0) were found to have the cubic spinel structure of which the lattice constants ${\alpha}_2$ increases linearly from 8.339 to 8.427 ${\AA}$ with increasing Zn content x, following Vegard's law, approximately. The saturation magnetization $M_s$ was 48 emu/g for x=0.4 and decreased to 8.0 emu/g for higher Zn contents suggesting the typical ferrimagnetism in mixed spinel ferrites. Pure NiZn ferrite phase substituted by Cu was observed before using the additive but hematite phase was partially appeared at $Ni_{0.2}Zn_{0.2}Cu_{0.6}Fe_2O_4$. On the other hand, the hematite phase in this NiZn Cu ferrite was disappeared after using the additive of acethyl aceton with small amount. The saturation magnetization Ms of $Ni_{0.2}Zn_{0.8-y}Cu_yFe_2O_4$(y=0.2∼0.6) as measured was about 51 emu/g at 77K and 19 emu/g at room temperature, respectively.

• 대한전자공학회논문지SD
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• 제37권1호
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• pp.36-43
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• 2000

청색 발광 SrS:CuCl TFEL 소자의 휘도를 향상시키기 위하여 황 압력과 열처리 조건을 최적화하여 SrS:CuCl TFEL 소자를 제작하였다. 전자빔 증착 장비를 이용하여 SrS:CuCl 형광체를 6000 ~ 8000 ${\AA}$ 두께로 증착 시킨 후, 800 $^{\circ}C$에서 3분 동안 열처리하여 TFEL 소자를 제작시켰다. 형광체 결정은 열처리 온도 및 열처리 지속 시간의 증가에 따라 향상되었다. SrS:CuCl TFEL 소자는 468 nm 와 500 nm에서 발광 피크 파장을 나타내었고, CIE 색 좌표는 x = 0.21, y = 0.33로 청색 빛이 방출되었다. SrS:CuCl TFEL 소자의 휘도$(L_{40})$는 형광체 증착 중의 황 압력에 크게 의존하여 황 압력을 $8{\times}10^{-6}$ torr에서 $2{\tiems}10^{-5}$ torr로 증가시켰을 때 262 cd/$m^2$에서 728 cd/$m^2$로 증가되었다.

• 열처리공학회지
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• 제8권4호
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• pp.245-254
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• 1995

The purpose of this study was to examine the effects of low melting point phase(LMPP) on mechanical properties in the Al-Cu-Li-X(In, Be) alloys. This study was performed by the differential scanning calorimetry(DSC), the transmission electron microscope(TEM), hardness test, tensile test and notch tensile test. The shape of LMPP in the specimens homogenized at $570^{\circ}C$ was film type due to remelting at grain boundary during homogenization. Low melting point phases had no effects on mechanical properties in the aging treated materials, because the density of LMPPs was low. Mechanical properties of the aging treated materials were affected by the density of matrix precipitation phases and grain sizes. For the In or In, Be added Al-Cu-Li alloys, the optimum solution treatment temperature was $550^{\circ}C$. The strength of Al-Cu-Li-In-Be $T_6$ treated alloy was higher than that of 2090-$T_8$ alloy.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.627-631
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• 공업화학
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• 제28권3호
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• pp.355-359
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• 2017

Si/Al 몰비율이 1.08~1.20를 가진 제올라이트 X를 수열합성반응을 이용하여 제조한 후, $Mg^{2+}$ 또는 $Cu^{2+}$을 지닌 금속질산염용액으로 이온교환을 하여 이온 교환된 제올라이트 X를 준비하였다. 모든 준비된 제올라이트 X 시료들에 대해 XRD, SEM, EDS를 이용하여 제올라이트의 결정 구조 변화를 확인하였으며, 암모니아 승온 탈착법($NH_3$-TPD)을 통해 시료의 암모니아 흡착능력에 대한 분석을 진행하였다. XRD 결과, 준비된 제올라이트 X는 양이온성분에 상관없이 Faujasite (FAU) 결정상을 유지하였지만, $Mg^{2+}$ 및 $Cu^{2+}$로 이온교환된 제올라이트 X에 대한 결정화도는 감소되었다. EDS분석결과, 이온 교환된 제올라이트 X시료들 안에 각각의 양이온이 분포되어 있는 것을 확인할 수 있었다. $NH_3$-TPD 분석결과 $Mg^{2+}$-와 $Cu^{2+}$-제올라이트 X의 암모니아 흡착능은 각각 1.76 mmol/g과 2.35 mmol/g이었으나, $Na^+$-제올라이트 X의 암모니아 흡착능은 3.52 mmol/g ($NH_3/catalyst$)으로 확인되었다. 향후 암모니아를 제거하기 위한 흡착제로서 $Na^+$-제올라이트 X가 활용될 가능성이 높다고 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• 한국자기학회지
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• 제8권3호
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• pp.111-117
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• 1998

최근 perovskit 구조의 망간산화물에서 발견된 초거대자기저항(colossal magnetoresistance: CMR) 현상의 발견은 물리적 특이성과 공업적인 응용 가능성으로 학계의 큰 주목을 받고 있다. 그런데 이러한 CMR 현상은 망간화산화물외에 pyrochlore 구조의 Tl2Mn2O7과 spinel 구조의 Cr-황화물에서도 관측됨었음이 보고되었다. 본 논문에서는 Cr-황화물 Fe1-xCuxCr2S4 (x=0.0, 0.5, 1.0)의 전자구조를 구재밀도근사(local density approximation: LDA) lineatized muffintin orbital(LMTO) 밴드계산 방법을 이용하여 연구하였다. 그 결과 x=0.0, 0.5에 대한 특성저항은 절반금속(Half-Metal)성질과 얀-텔러(Jahn-Teller) 효과를 적용하여 정성적인 이해가 가능하였다. 특히, x=0.0, 0.5, 1.0각각에 대해서 전도모델을 제시하여, 계산결과로 얻어진 절반금속 전자구조가 CMR 현상과 밀접한 관련이 있음을 예측하였다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.