• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• Progress in Superconductivity
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• v.10 no.2
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• pp.128-132
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• 2009

Polycrystalline samples of $(Ru_{0.8}Nb_{0.2})Sr_2(Gd_{1.5-x}Nd_xCe_{0.5})Cu_2O_z$($ 0{\leq}x{\leq}1.25$) have been synthesized by a solid-state reaction route. The X-ray diffraction data revealed that the Nd solubility limit can be placed between x=0.5 and x=0.75. The superconducting transition temperature decreased with increasing Nd content, confirming that Nd entered the lattice. Room-temperature thermoelectric power measurements showed that all the samples are in the underdoped state and the partial substitution of Nd for Gd resulted in a decrease in the carrier density on the superconducting layers.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.3
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• pp.47-53
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• 1991

In this study, the structural phase transition and decomposition of superconducting ceramic, Y-Ba-Cu-O system was studied. The results of the study are as follows. The high Tc superconductor $Y_2Ba_2Cu_3O_{7-x}$ is made in solid state reaction of $O_2$ atmosphere and the valve of X in $Y_2Ba_2Cu_3O_{7-x}$ is 0.1~0.2. The transition temperature of tetragonal-orthorhombic phase of $Y_2Ba_2Cu_3O_{7-x}$ appear at $790^{\circ}C-900^{\circ}C$. In the result of measuring the electrical resistance of sample annealed in $O_2$ atmosphere, the electrical resistance show zero at 92 K and the best superconductor, $Y_2Ba_2Cu_3O_{7-x}$(Y 123) can be mabe.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• Electrical & Electronic Materials
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• v.1 no.2
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• pp.126-135
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• 1988

Acrylonitrile-Acrylic acid 공중합체와 이를 amidation시킬 공중합체에 구리착물을 형성시켜 IR spectrum분석, 점도측정, 전자현미경관찰, 열분석, 전기전도성등을 검토하였다. AN-AA 공중합체-Cu(II)와 아미드화 AN-AA 공중합체-Cu(II)착물은 pH9의 범위에서 가장 안정한 값을 가지며 착물이 형성되거나 Cu$_{x}$S가 도입된 공중합체는 그 구조가 ompact해짐을 알 수 있었다. 공중합체에 Cu(II)착물이 형성되면 열안정성이 감소되며 Cu(II)착물은 아세톤 용액에서 요오드로 dope 될 때 저항값이 $10^{5}$-$10^{6}$.OMEGA..cm를 나타냈다. 저항값은 CuCl$_{2}$와 I$_{2}$의 양에 영향을 받으며 20wt% 이상의 CuCl$_{2}$와 1.0wt% I$_{2}$로 처리하였을 때 반도체영역의 저항값을 보였다. 또 Cu$_{x}$S를 도입할 경우 CuSO$_{4}$의 농도가 30g/l로, 3시간 반응시켰을 때 가장 만족스러운 전도도값을 나타냈다. 공중합체-Cu(II)보다 구리이온을 도입한 Cu$_{x}$S공중합체의 전도도값이 $10^{4}$정도로서 공중합체-Cu(II)보다 높은 전도성을 나타냈다.다.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.177-181
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• 2014

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.28-29
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• 2006

The magnetic properties of a series of both annealed and as-rolled Ni-$W_y$ alloy tapes with compositions y = 0, 1, 3, and 5 at.%, were studied. To compare with Ni-W alloys, the magnetic properties of a series of both annealed and as-rolled $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5 and 7 at.%, were studied, as well. Both the isothermal mass magnetization M(H) of a series of samples, such as both Ni-W and [Ni-W]-Cu alloy tapes, at different fixed temperatures and M(T) in fixed field, were measured using a PPMS-9 (Quantum Design). The degree of ferromagnetism of Ni-$W_y$ alloys have reduced as W-content y increases. Both the saturation magnetization $M_{sat}$ and Curie temperature $T_c$ decrease linearly with W-content y, and both $M_{sat}$ and $T_c$ go to zero at critical concentration of $y_c$ ~ 9.50 at.% W. The effect of Cu addition on both the saturation magnetization $M_sat$ and Curie temperature $T_c$ decrease linearly with Cu-content x in $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5, and 7 at.%. The results confirm that [Ni-W]-Cu alloy tapes can have much reduced ferromagnetism as Cu-content x increases.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.113-119
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• 2009

$^{57}Fe_xCu_{1-x}O$(x = 0.0, 0.02) powders were prepared by sol-gel method and their crystallographic and magnetic hyperfine properties have been studied using X-ray diffraction and $M{\ddot{o}}ssbauer$ spectroscopy (MS). The crystal structure of the samples is found to be monoclinic without any secondary phases and their lattice parameters increase with increasing annealing temperature ($T_A$), which is attributed to an increase in oxygen-vacancy content. MS measurements at room temperature indicate that $Fe^{3+}$ ions substitute $Cu^{2+}$ sites and ferromagnetic phase grow with increasing $T_A$. Magnetic hyperfine and quadrupole interactions of $^{57}Fe_{0.02}Cu_{0.98}O$ ($T_A=500^{\circ}C$) in the antiferromagnetic state at 17 K have been studied, yielding the following results: $H_{hf}=426.94\;kOe$, ${\Delta}E_Q=-3.67\;mm/s$, I.S.=0.32 mm/s, ${\theta}=65^{\circ}$, ${\phi}=0^{\circ}$, and ${\eta}=0.6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.42-45
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• 2003

The phase transformation of $REBa_2Cu_3O_{7-x}$ (RE=Nd, Gd, Dy) was investigated using isothermal heat-treatment and continuous cooling in air. During continuous cooling, the $REBa_2Cu_3O_{7-x}$ (RE=123) superconducting phase with well-distributed $REBa_2Cu_3O_{7-x}$ (RE-211) was obtainde at a cooling rate of $0.001^{\circ}C$/s. Single phase RE-123 (Nd, Gd, Dy) was stable at $1050^{\circ}C$, $1050^{\circ}C$, and $950^{\circ}C$ during isothermal heat-treatment, respectively. Above these temperatures the RE-211 phase existed within the RE-123 grains. The RE-123, RE-211, $BaCu_2Od_2$, and CuO phases coexisted at $50^{\circ}C$ below the partial melting temperature for each respective rare-earth RE-123.