• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.375-375
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• 2011

Cu(In1-xGax)Se2 (CIGS)박막증착법 중 금속 전구체의 셀렌화 공정법은 다른 제조 방법에 비해 대면적 생산에 유리하고, 비교적 공정 과정이 간단하다는 장점이 있다. 이 제조 방법은 금속 전구체를 만든 후에 셀렌화 공정을 하게 된다. 셀렌화 공정은 대부분 H2Se 가스를 사용하지만 유독성으로 사용하는데 주의해야 한다. 본 실험은 H2Se를 사용하지 않고 Se원료를 주입하기 위해 Se cracker를 사용했고 금속 전구체 증착과 셀렌화를 동시에 하는 반응성 스퍼터링 후 열처리 법을 이용하여 CIGS 박막을 증착 했다. CIGS의 박막의 Cu/[In+Ga], Ga/[In+Ga]비를 변화시켜 특성변화를 관찰했다. Cu/[In+Ga]비가 감소할수록 CIGS의 결정방향인 (112) 이 우세하게 발달했고 Ga/[In+Ga]비가 증가할수록 CIGS의 결정면 사이의 값이 작아지기 때문에 CIGS peak의 2-Theta 값이 증가하게 된다. CIGS 박막 태양전지의 구조는 Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 제작했다. CIGS박막의 조성비가 Cu/[In+Ga]=0.84, Ga/[In+Ga]=0.24인 박막태양전지에서 개방전압 0.48 V, 단락전류밀도 33.54 mA/cm2, 충실도 54.20% 그리고 변환효율 8.63%를 얻었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• 한국결정성장학회지
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• 제14권2호
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• pp.68-72
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• 2004

Sm 원소가 첨가된 $(Sm/Y)_{1.8}Ba_{2.4}Cu_{3.4}O_{7-x}$[이하 (Sm/Y)1.8] 고온초전도체를 국부용융성장법을 이용해 대기 중에서 용융성장실험을 하였다. 초기 (Sm/Y)1.8 초전도체 시편은 rubber 몰드를 이용해 냉간정수압성형(CIP) 과정을 거쳐 길이 방향 원통형상으로 제조되었다. 이렇게 얻어진 (Sm/Y)1.8 초전도체는 용융온도 및 성장속도에 따라 광학현미경, TEM그리고 SQUID magnetometer를 이용해 미세구조 및 초전도특성을 평가하였다. 이 결과 (Sm/Y)1.8 초전도체의 최적의 용융온도 및 성장속도는 $1085^{\circ}C$에서 3.5mm/hr로 나타났다. 특히 일방향으로 용융성장된 (Sm/Y)1.8 초전도체의 광학현미경 및 TEM에 의하 미세구조 관측 결과, 초전도상인 (Sm/Y)123 matrix내에 비초전도상인 (Sm/Y)211 inclusions이 균질하게 분포되어 있는 것이 관측되었다. 초전도특성을 평가한 결과 용융성장된 (Sm/Y)1.8초전도체는 90K에서 임계온도가 시작되어 77K이상의 온도에서 포화되는 특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• Journal of Magnetics
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• 제3권2호
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• pp.39-40
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• 1998

Normal state EPR signals have been studied for the n-type$ high-T_c$ superconductors $Nd_{1.85}Ce_{0.15}CuO_{4-x} and Nd_2CuO_{3.6-x}F_{0.4-y}.$ Since EPR signals were observed only in quenched non-superconducting samples and were absent in furnace-cooled samples, our results suggest that no normal state EPR signals come from pure phase n-type hihg-Tc superconductors. Our observation is consistent with previously reported absence of nomal state EPR signals in the p-type high-Tc superconductors.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1278-1285
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• 2003

This study investigated the phase transformation of the REBa$_2$Cu$_3$$O_{7-x}$ (RE=Nd, Gd, Dy) superconductor, and CCT (Continuous-Cooling-Transformation) along with the TTT (Time-Temperature-Transformation) diagrams are suggested according to the isothermal and continuous cooling heat-treatments. The peritectic temperature of the 123 phases decreased approximately 3$0^{\circ}C$ when the ionic radius of the rare-earth elements was reduced. The optimum cooling rate where BC and Cu-free phases do not exist was 0.001$^{\circ}C$/s. At this cooling late, the 123 phase grew with a c-axis Perpendicular to the surface and had a well-distributed 211 phase. When the oxygen partial pressure was reduced Outing isothermal heat-treatment, the formation temperature of the 211 phase decreased. In addition, the formation temperature of the 123 phases decreased from 100$0^{\circ}C$ (Nd-123) to 9$25^{\circ}C$ (Gd-123), and finally 875$^{\circ}C$ (Dy-123) according to the decrease in the ionic radius of the tare-earth elements. Compared to Nd-123, Gd- and Dy-123 had a better texture with a well-distributed 211 phase.e.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• Journal of Welding and Joining
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• 제33권3호
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• pp.19-24
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• 2015

Joint properties of electric control unit (ECU) module using Sn-Cu-(X)Al(Si) lead-free solder alloy were investigated for automotive electronics module. In this study, Sn-0.5Cu-0.01Al(Si) and Sn-0.5Cu-0.03Al(Si) (wt.%) lead-free alloys were fabricated as bar type by doped various weight percentages (0.01 and 0.03 wt.%) of Al(Si) alloy to Sn-0.5Cu. After fabrications of lead-free alloys, the ball-type solder alloys with a diameter of 450 um were made by rolling and punching. The melting temperatures of 0.01Al(Si) and 0.03Al(Si) were 230.2 and $230.8^{\circ}C$, respectively. To evaluation of properties of solder joint, test printed circuit board (PCB) finished with organic solderability perseveration (OSP) on Cu pad. The ball-type solders were attached to test PCB with flux and reflowed for formation of solder joint. The maximum temperature of reflow was $260^{\circ}C$ for 50s above melting temperature. And then, we measured spreadability and shear strength of two Al(Si) solder materials compared to Sn-0.7Cu solder material used in industry. And also, microstructures in solder and intermetallic compounds (IMCs) were observed. Moreover, thickness and grain size of $Cu_6Sn_5$ IMC were measured and then compared with Sn-0.7Cu. With increasing the amounts of Al(Si), the $Cu_6Sn_5$ thickness was decreased. These results show the addition of Al(Si) could suppress IMC growth and improve the reliability of solder joint.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.118-118
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• 1994

Processings of the P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$) C $u_3$ $O_{8+{\delta}}$ (2213)system for x=0.4-0.6 to control deleterious oxidative decomposition have been studied. Our results show that comounds are stable at both low p $O_2$ and high p $O_2$ if they are suitably oxidized. Various oxidation and deoxidation procedures have been investigated in order tp determine the optimum hole concentration in the Cu $O_2$layers for the maximum $T_{c}$. In cases x=0.5 and x=0.6, the optimum hole concentration in the 2213-phase is achieved, but with accelerated oxidative decomposition. Destite this, the maximum $T_{c}$~80-83K for the 2213-phase can be deduced when x=0.5 to 0.6 to 0.6

• 한국자기공명학회논문지
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• 제8권2호
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• pp.86-95
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• 2004

A Cu(I) complex with an asymmetric TTF derivative (CET-EDTTTF) is prepared from the slow-diffusion method using CET-EDTTTF and Cu(I)Br solutions and characterized by X-ray crystallography and EPR spectroscopy. Structural analysis shows Cu(I) ions are tetrahedrally coordinated to two bridging bromides, one terminal bromide, and one S atom from CET-EDTTTF. Detailed geometrical and EPR analysis identified that the dimmer molecule contains [Cu$_2Br_4]^{2-}$ anion between two [CET-EDTTTF]$^+$ radical cations. Single-crystal EPR investigation of the complex reveals that the ganisotropy is unusually big, compared to those of the previously reported TTF+ cation radicals, implying that there is significant contribution of the Cu d-orbital to the HOMO of the complex.