• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.467-468
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• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 한국재료학회지
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• 제5권5호
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3233-3238
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• 2013

Two new Cu(II) complexes, $[Cu_2(acpy-mdtc)_2(HBA)(ClO_4)]{\cdot}H_2O$ (1) (acpy-mdtc- = 2-acetylpyridine S-methyldithiocarbamate and $HBA^-$ = benzilic acid anion) and $[Cu_2(acpy-phtsc)_2(HBA)]{\cdot}ClO_4$ (2) (acpy-$phtsc^-$ = 2-acetylpyridine 4-phenyl-3-thiosemicarbazate) have been synthesized and characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, and single crystal X-ray diffraction. The X-ray analysis reveals that the structures of 1 and 2 are dinuclear copper(II) complexes bridged by two thiolate sulfur atoms of Schiff base ligand and bidentate bridging $HBA^-$ anion. For 1, each of the two copper atoms has different coordination environments. Cu1 adopts a five-coordinate square-pyramidal with a $N_2OS_2$ donor, while Cu2 exhibits a distorted octahedral geometry in a $N_2O_2S_2$ manner. For 2, two Cu(II) ions all have a five-coordinate square-pyramidal with a $N_2OS_2$ donor. In each complex, the Schiff base ligand is coordinated to copper ions as a tridentate thiol mode.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.584-588
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• 2009

Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.250-251
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• 2014

This study introduces a simple deposition of $Cu_2O$ thin films with surface morphologies composed of columns, submicron-rods and submicron-branches on glass substrate from metallic Cu targets by tailoring the $Ar/O_2$ ratios during the sputtering. The obtained samples were used to fabricate gas sensor. The $H_2S$ sensing properties of the sensors at working temperatures from $100^{\circ}C$ to $300^{\circ}C$ were studied, in which $Cu_2O$ submicron-branches performed the best sensing property comparing with the rest morphologies. A transformation of $Cu_2O$ to $Cu_2S$ and CuS was consider as a main factor to the sensing mechanism of the sensors.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 청정기술
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• 제8권1호
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• pp.53-59
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• 2002

공침-액상산화법으로 $Cu-CeO_2$ 촉매를 제조하여 선택적 산화반응에 대한 활성을 실험적으로 고찰하였다. $Cu-CeO_2$ 촉매는 일산화탄소의 선택적 산화반응에 우수한 활성을 보였으나, 구리의 담지량과 촉매 활성 사이의 일정한 상관관계를 찾을 수 없었다. 또한 구리의 담지량이 증가함에 따라 $CeO_2$의 세공 구조가 변하는 것을 확인할 수 있었으며 이는 Cu와 $CeO_2$가 고용체를 형성하기 때문으로 확인되었다. 촉매 전처리인 환원처리를 통한 Cu와 $CeO_2$의 고용체 형성이 촉매의 일산화탄소의 선택적 산화반응에 대한 활성을 증가시켰다.

• 한국진공학회지
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• 제7권2호
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• pp.135-140
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• 1998

고온($350^{\circ}C$)에서 polyimide위에 증착한 Cu의 초기성장 과정과 Cu/polyimide계면에서 의 반응물 형성에 관하여 XPS를 이용하여 관찰하였다. Polyimide 위에 고온 중에서의 Cu 증착시, 상온에서와는 달리 초기에는 Cu-C-N complex가 먼저 형성되고, 다음에 Cu-N-O complex가 주가 되어 Cu/Polyimide 계면을 형성하고, Cu의 증착두께가 증가함에 따라 Cu 산화물에서 서서히 metallic Cu로 성장하는 것을 볼 수 있었다. 그리고 반응물 형성 관점에 서, Cu 고온 증착시에 형성된 Cu/polyimide의 계면이 상온에서 이루어진 계면보다 상당히 예리함을 볼 수 있었다.

• 한국세라믹학회지
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• 제55권3호
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• pp.267-274
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• 2018

$TiO_2/CuS$ nanocomposites were fabricated by precipitation of nanosized CuS via sonochemical method on electrospun $TiO_2$ nanofibers, and their structure, chemical bonding states, optical properties, and photocatalytic activity were investigated. In the $TiO_2/CuS$ nanocomposite, the position of the conduction band for CuS was at a more negative than that of TiO; meanwhile, the position of the valence band for CuS was more positive than those for TiO, indicating a heterojunction structure belonging to type-II band alignment. Photocatalytic activity, measured by decomposition of methylene blue under visible-light irradiation (${\lambda}$ > 400 nm) for the $TiO_2/CuS$ nanocomposite, showed a value of 85.94% at 653 nm, which represented an improvement of 52% compared to that for single $TiO_2$ nanofiber (44.97% at 653 nm). Consequently, the photocatalyst with $TiO_2/CuS$ nanocomposite had excellent photocatalytic activity for methylene blue under visible-light irradiation, which could be explained by the formation of a heterojunction structure and improvement of the surface reaction by increase in surface area.