• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• 한국세라믹학회지
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• 제38권8호
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• pp.732-739
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• 2001

산업부산자원으로부터 유입되는 중금속이 시멘트 수화반응에 미치는 영향에 대하여 연구하였다. 출발물질은 순수시약을 사용하여 $C_3$S와 $C_2$S 조성으로 배합하고 여기에 Zn, Cu, Cr의 중금속 산화물을 1000ppm, 2000ppm, 3000ppm 첨가하여 150$0^{\circ}C$에서 1시간 소결하여 중금속의 고용분배, 결정구조, 용출상태 그리고 수화열을 관찰하였다. 중금속중 Zn는 $C_3$S와 간극질에 집중 고용되고 Cu는 간극물질에 집중 고용되며 Cr은 $C_3$S와 $C_2$S에 집중 고용되었다. 광학현미경 및 XRD 관찰결과 중금속 함량별로 $C_3$S와 $C_2$S의 결정상에는 큰 영향이 없는 것으로 나타났다. 그리고 7일간 수화시 Zn는 40~50%, Cu와 Cr은 전량 용출되었다. Conduction calorimeter 분석결과 중금속 함량별 변화에도 $C_3$S와 $C_2$S 수화열에는 차이가 없었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.75-76
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• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2813-2817
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• 2014

A new magnetic semiconductor material was synthesized to enable separation after a liquid-type photocatalysis process. Core@shell-structured $CuFeS_2@TiO_2$ magnetic nanoparticles were prepared by a combination of solvothermal and wet-impregnation methods for photocatalysis applications. The materials obtained were characterized using X-ray diffraction, transmission electron microscopy, ultraviolet-visible, photoluminescence spectroscopy, Brunauer-Emmett-Teller surface area measurements, and cyclic voltammetry. This study confirmed that the light absorption of $CuFeS_2$ was shifted significantly to the visible wavelength compared to pure $TiO_2$. Moreover, the resulting hydrogen production from the photo-splitting methanol/water solution after 10 hours was more than 4 times on the core@shell structured $CuFeS_2@TiO_2$ nanocatalyst than on either pure $TiO_2$ or $CuFeS_2$.

• E2M - 전기 전자와 첨단 소재
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• 제1권2호
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• pp.126-135
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• 1988

Acrylonitrile-Acrylic acid 공중합체와 이를 amidation시킬 공중합체에 구리착물을 형성시켜 IR spectrum분석, 점도측정, 전자현미경관찰, 열분석, 전기전도성등을 검토하였다. AN-AA 공중합체-Cu(II)와 아미드화 AN-AA 공중합체-Cu(II)착물은 pH9의 범위에서 가장 안정한 값을 가지며 착물이 형성되거나 Cu$_{x}$S가 도입된 공중합체는 그 구조가 ompact해짐을 알 수 있었다. 공중합체에 Cu(II)착물이 형성되면 열안정성이 감소되며 Cu(II)착물은 아세톤 용액에서 요오드로 dope 될 때 저항값이 $10^{5}$-$10^{6}$.OMEGA..cm를 나타냈다. 저항값은 CuCl$_{2}$와 I$_{2}$의 양에 영향을 받으며 20wt% 이상의 CuCl$_{2}$와 1.0wt% I$_{2}$로 처리하였을 때 반도체영역의 저항값을 보였다. 또 Cu$_{x}$S를 도입할 경우 CuSO$_{4}$의 농도가 30g/l로, 3시간 반응시켰을 때 가장 만족스러운 전도도값을 나타냈다. 공중합체-Cu(II)보다 구리이온을 도입한 Cu$_{x}$S공중합체의 전도도값이 $10^{4}$정도로서 공중합체-Cu(II)보다 높은 전도성을 나타냈다.다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.

• Current Photovoltaic Research
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• 제8권1호
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• pp.27-32
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• 2020

CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p_3/2 and Cu 2p_1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu²⁺ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.