• 대한화학회지
• /
• 제61권1호
• /
• pp.29-33
• /
• 2017

Formation of Au particles in nonstoichiometric $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxide from aniline + hydrochloric acid mixtures and chloroauric acid in the ratios 30 : 1; 60 : 1; 90 : 1 (S1-S3) by volume and 0.01 mol of copper acetate, $Cu(OCOCH_3)_2.H_2O$, in each case is performed by sol-gel growth. Powder x-ray diffraction (XRD) results show Au particles are dispersed in tetragonal nonstoichiometric dicopper (I) dicopper (II) oxides, $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$). Average crystallite sizes of Au particles determined using Scherrer equation are found to be in the approximate ranges ${\sim}85-140{\AA}$, ${\sim}85-150{\AA}$ and ${\sim}80-150{\AA}$ in S1-S3, respectively which indicate the formation of Au nano-micro size particles in $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Hysteresis behaviour at 300 K having low loop areas and magnetic susceptibility values ${\sim}5.835{\times}10^{-6}-9.889{\times}10^{-6}emu/gG$ in S1-S3 show weakly ferromagnetic nature of the samples. Broad and isotropic electron paramagnetic resonance (EPR) lineshapes of S1-S4 at 300, 77 and 8 K having $g_{iso}$-values ${\sim}2.053{\pm}0.008-2.304{\pm}0.008$ show rapid spin-lattice relaxation process in magnetic $Cu^{2+}$ ($3d^9$) sites as well as delocalized electrons in Au ($6s^1$) nano-micro size particles in the $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Broad and weak UV-Vis diffuse reflectance optical absorption band ~725 nm is assigned to $^2B_{1g}{\rightarrow}^2A_{1g}$ transitions, and the weak band ~470 nm is due to $^2B_{1g}{\rightarrow}^2E_g$ transitions from the ground state $^2B_{1g}$(${\mid}d_{x^2-y^2}$>) of $Cu^{2+}$ ($3d^9$) ions in octahedral coordination having tetragonal distortion.

• 에너지공학
• /
• 제5권1호
• /
• pp.65-71
• /
• 1996

Ni-Cu를 SiO$_2$에 담지시켜 공간속도(Space Velocity; S.V), 메탄올 분압, 반응온도 및 Ni-Cu 조성비에 따른 메탄올 분해 반응의 활성을 조사하였다. S.V는 10,000~30,000h$^{-1}$, 반응온도는 150~40$0^{\circ}C$까지 변화시켰으며 Cu/(Ni＋Cu)비는 0, 0.25, 0.5, 0.75, 1로 변화시켜 보았다. Ni 단일 촉매의 경우 온도가 상승하면서 전환율이 100%에 도달함에 따라 CO의 선택도가 급감소하는 반면 Ni에 Cu를 첨가함으로써 높은 선택도를 유지하였다. 반응의 주생성물로서 CO와 H$_2$가 생성되었고 $CO_2$와 CH$_4$가 부생성물로서 주로 생성되었다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1997년도 한국재료학회 추계학술발표회
• /
• pp.120-120
• /
• 1997

• 대한전자공학회논문지SD
• /
• 제37권1호
• /
• pp.36-43
• /
• 2000

청색 발광 SrS:CuCl TFEL 소자의 휘도를 향상시키기 위하여 황 압력과 열처리 조건을 최적화하여 SrS:CuCl TFEL 소자를 제작하였다. 전자빔 증착 장비를 이용하여 SrS:CuCl 형광체를 6000 ~ 8000 ${\AA}$ 두께로 증착 시킨 후, 800 $^{\circ}C$에서 3분 동안 열처리하여 TFEL 소자를 제작시켰다. 형광체 결정은 열처리 온도 및 열처리 지속 시간의 증가에 따라 향상되었다. SrS:CuCl TFEL 소자는 468 nm 와 500 nm에서 발광 피크 파장을 나타내었고, CIE 색 좌표는 x = 0.21, y = 0.33로 청색 빛이 방출되었다. SrS:CuCl TFEL 소자의 휘도$(L_{40})$는 형광체 증착 중의 황 압력에 크게 의존하여 황 압력을 $8{\times}10^{-6}$ torr에서 $2{\tiems}10^{-5}$ torr로 증가시켰을 때 262 cd/$m^2$에서 728 cd/$m^2$로 증가되었다.

• Applied Microscopy
• /
• 제26권2호
• /
• pp.235-241
• /
• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• 한국표면공학회지
• /
• 제48권4호
• /
• pp.169-173
• /
• 2015

$CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.

• Progress in Superconductivity
• /
• 제2권2호
• /
• pp.65-70
• /
• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• 한국수소및신에너지학회논문집
• /
• 제32권6호
• /
• pp.663-668
• /
• 2021

For the development of highly efficient quantum dot-sensitized solar cells (QDSCs), it is important to enhance the electrocatalytic activity of the counter electrodes (CEs). Herein, a fabrication process of Cu₂S CEs are optimized for the development highly efficient QDSCs. The surface of brass film is treated with HCl solution to prepare the Cu₂S CEs, and the concentraion as well as the temperature of HCl solution are controlled. It is found that the uniformity for the thickness of prepared Cu₂S CEs is enhanced when the diluted HCl solution is used, compared to the HCl solution of standard concentration. In addition, the electrocatalytic activity of the Cu₂S CEs is also increased with the modificed process, which is confirmed by impedance data and Tafel polarization curves. As a result, the photoconversion efficiency of QDSCs is improved from 4.49% up to 5.73%, when the concentraion and temperature of the HCl treatment are efficiently optimized.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
• /
• pp.225-231
• /
• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.261-262
• /
• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.