• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.60-65
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• 2004

[ $MoS_2S$ ] is a well-known metal sulfide applied as solid lubricants and an additive to prolong the life of sintered bearings under severe conditions. However, the high price of $MoS_2S$ limited its wide application. This study is aimed to investigated the possibility for application to solid lubricants for $Cu_2S$ as a substitute of v. Bronzes added $Cu_2S$ and $MoS_2S$ are produced by powder metallurgy in this study, and then evaluated their friction and wear properties. The sliding wear test using pin-on-disc type machine, was conducted at several sliding speeds for three type test pieces, bronze and bronzes added $Cu_2S/MoS_2$. Addition of $Cu_2S$ to bronze leads to relatively good friction and wear properties, although it is not so good as addition of $MoS_2S$. But the properties of bronze added $Cu_2S/MoS_2$ would be not suitable for the condition under the high sliding speed.

• 한국진공학회지
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• 제5권4호
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• pp.341-347
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• 1996

Spray pyrolysis 방법으로 넓은 면적의 $Cu_2S$/CdS 태양전지를 제작하였다. 제작과정에서 전극형성, CdS spray 온도조건, $Cu_2S$층의 접합 조건등 태양전지의 효율에 영향을 주는 요인을 조사하였다. CdS 박막의 조건은 주사 전자현미경, X-선 회절기, 온도변화에 따른 광흡수 및 관전도 특성등을 통해 결정하였다. 1$\textrm{cm}^2$의 면적의 전지에 air mass 2(AM2)인 75mW/$\textrm{cm}^2$로 빛을 조사했을 때 3.15%의 효율을 얻었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.51.1-51.1
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• 2010

이번 연구에서는 저온 용액공정을 이용하여p-type 반도체로 많이 사용되고 있는 $Cu_xS$를 기판 위에 증착하여 그 특성을 분석하였다. $Cu_xS$는 x의 값에 따라 다섯가지의 결정구조를 가지는데 CuS, $Cu_{1.75}S$, $Cu_{1.8}S$, $Cu_{1.95}S$, $Cu_2S$ 들이 그것이다. 태양전지에서 p형 반도체로 중요한 역할을 담당하고 있는 $Cu_xS$는 cell에서 사용되었을 때 energy bandgap이 1.2-2.5eV일 때 가장 좋은 특성을 나타낸다. 이번 연구에서는 특히 조성에 따라서 물리적, 광학적으로 어떤 특성을 나타내는지에 대하여 XRD, SEM, Uv-vis 등의 분석을 해보았다. XRD의 경우 농도가 높아질수록 peak의 intensity는 커지지만 어느 농도 이상부터는 Cu가 Oxide화 되는 것을 관찰할 수 있었다. SEM image의 경우에는 조성에 따른 포면의 상태를 분석해보았다. 조성에 따른energy bandgap을 알아보기 위해서는 Uv-vis을 측정하였으며 이를 이용하여 증착된 박막의 투과도 역시 함께 분석해보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1605-1608
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• 2004

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.392-397
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• 2014

CuO nanotubes are synthesized using $TeO_2$ nanorod templates for application to $H_2S$ gas sensors. $TeO_2$ nanorod templates were synthesized by using the VS method through thermal evaporation. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction showed that the synthesized nanotubes were monoclinic-structured polycrystalline CuO with diameter and wall thickness of approximately 100~300 nm and 5~10 nm, respectively. The CuO nanotube sensor showed responses of 136~325% for the $H_2S$ concentration of 0.1~5 ppm at room temperature. These response values are approximately twice as high as that of the CuO nanowire sensor for the same concentrations of $H_2S$ gas. Along with the investigation of the performance of the sensors, the mechanisms of $H_2S$ gas sensing of the CuO nanotubes are also discussed in this study.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.348-354
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• 2009

Copper(II) complexes with tetraoxo dithia tetraaza macrocyclic ligands; [18]ane$N_4S_2$: 1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, [20]ane$N_4S_2$: 1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane,Bzo2[18]ane$N_4S_2$: dibenzo-1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, Bzo2[20]ane$N_4S_2$: dibenzo-1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane; were entrapped in the nanopores of zeolite-Y by a two-step process in the liquid phase: (i) adsorption of [bis(diamine)copper(II)] (diamine = 1,2-diaminoethane, 1,3-diaminopropane, 1,2-diaminobenzene, 1,3-diaminobenzene); $[Cu(N-N)_2]^{2+}$-NaY; in the nanopores of the zeolite, and (ii) in situ template condensation of the copper(II) precursor complex with thiodiglycolic acid. The obtained complexes and new host-guest nanocomposite materials; $[Cu([18]aneN_4S_2)]^{2+}-NaY,\;[Cu([20]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[18]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[20]aneN_4S_2)]^{2+}$-NaY; have been characterized by elemental analysis FT-IR, DRS and UV-Vis spectroscopic techniques, molar conductance and magnetic moment data, XRD and, as well as nitrogen adsorption. Analysis of data indicates all of the complexes have been encapsulated within nanopore of zeolite Y without affecting the zeolite framework structure.

• Transactions on Electrical and Electronic Materials
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• 제4권1호
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• 한국진공학회지
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• 제15권1호
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• pp.45-49
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• 2006

깨끗한 Cu(110)와 산소가 흡착된 Cu(110) 표면에 Cu 성장에 의한 광학적 이방성의 변화를 RDS를 이용하여 연구하였다. 250K에서 Cu를 성장하면서 성장 모드와 산소의 계면활성제 효과를 확인하였다. 두 표면에 Cu를 성장하면서 4,25eV 봉우리의 규칙적인 변화를 확인하여 layer-by-layer 모드를 확인하였다.

• 대한전기학회논문지
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• 제43권2호
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• pp.296-302
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• 1994

Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.