• Title/Summary/Keyword: $Cu_2S$

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LACBED Observation of Strain Fields due to Precipitates, Especially S-Phase Particles in Al-Cu-Mg Alloy (Al-Cu-Mg 합금의 석출입자, 특히 S-상 입자들에 의한 변형장의 LACBED 관찰)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.37 no.2
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    • pp.123-133
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    • 2007
  • The strain fields due to precipitates, especially S-phase $(Al_2CuMg)$ particles in Al-2.5Cu-1.5Mg wt.% alloy were first investigated with Large Angle Convergent Beam Electron Diffraction (LACBED) method. The work involves LACBED pattern simulations to estimate possibly the strength of the strain fields. To do this the morphology of S-particle was optimized as a cylindrical shape with $a_s$ axis, and the displacement vector of strain fields was assumed to be perpendicular to $a_s$ axis. With this simple model the reasonable fittings between the observed patterns of the strain fields and simulations were obtained. And in the early aging stage of the alloy the significant strain fields were not observed. As a result of this study it is expected that the strain fields due to S-phase precipitates in the stage with maximum hardness would make a complex networks to possibly contribute to hardiness of the alloy.

Fabrication and Characteristics of C(IG)(SeS)2 Absorbers by Selenization and Sulfurization

  • Son, Young-Ho;Jung, Myoung-Hyo;Choi, Seung-Hoon;Choi, Jung-Kyu;Kim, Jin-Ha;Lee, Dong-Min;Park, Joong-Jin;Lee, Jang-Hee;Jung, Eui-Chun;Kim, Jung-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.361-361
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    • 2011
  • Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

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A Study on the Influence of Substituting Cu Eine Particle for CuO on NiCuZn Ferrite (CuO 대신 Cu 미분말 치환이 NiCuZn Ferrite에 미치는 영향에 관한 연구)

  • Kim, Jae-Sik;Koh, Jae-Gui
    • Journal of the Korean Magnetics Society
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    • v.13 no.1
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    • pp.15-20
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    • 2003
  • Diffusion speed of Cu metal fine particle is fast better than CuO, so it will promote grain growth in sintering. In this paper, the influence on substituting Cu fine particle for CuO of NiCuZn ferrite with basic composition (N $i_{0.204}$C $u_{0.204}$Z $n_{0.612}$ $O_{1.02}$)F $e_{1.98}$ $O_{2.98}$ has been investigated with varying Cu/CuO ratio. The perfect spinel structure of sintered specimen at 90$0^{\circ}C$ was confirmed by the analysis of XRD patterns. The best condition was obtained when the ratio of Cu/CuO was 60%, and the permeability was 1100 and Ms was 87 emu/g in this condition. Cu has influenced on grain growth in sintering, substituting Cu fine particle for CuO could lower sintering temperature over the 3$0^{\circ}C$. After sintering, substituting Cu performed as good as CuO.s CuO.s CuO.

The optical properties dependent on different doping concentrations of activators Cu2+ and in ZnS:Mn,Cu,Cl phosphor (활성제 Cu2+ 및 도핑농도에 따른 ZnS:Mn,Cu,Cl 형광체의 광학적 특성)

  • Han, Sang-Do;Kwon, Ae-Kyung;Lee, Hak-Soo;Han, Chi-Hwan;Kim, Jung-Duk;Gwak, Ji-Hye
    • Journal of Sensor Science and Technology
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    • v.15 no.5
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    • pp.323-327
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    • 2006
  • Manganese, copper and chlorine-doped ZnS phosphors (ZnS:Mn,Cu,Cl) were synthesized through solid-state reaction. Manganese was added in the range of amount $1.4{\sim}5.3$ mol % to ZnS phosphors containing 0.2 or 1.0 mol % of copper and a small amount of chlorine. As-synthesized phosphors showed a spherical morphology with a mean size of ${\sim}20\;{\mu}m$ and structural properties of Wurtzite, which were identified by SEM and XRD, respectively. Optical properties of ZnS:Mn,Cu,Cl synthesized with various concentrations of activators were analysed by both of PL and EL spectra. Samples mainly showing only 580 nm-orange emission by 380 nm-UV excitation gave different EL spectra of blue, green, and orange emissions at 450, 480 and 580 nm, respectively, depending on concentrations of $Cu^{2+}$ and $Mn^{2+}$.

Influence of Intermolecular Interactions on the Structure of Copper Phthalocyanine Layers on Passivated Semiconductor Surfaces

  • Yim, Sang-Gyu;Jones, Tim S.
    • Bulletin of the Korean Chemical Society
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    • v.31 no.8
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    • pp.2247-2254
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    • 2010
  • The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.

Fabrication of wide-bandgap β-Cu(In,Ga)3Se5 thin films and their application to solar cells

  • Kim, Ji Hye;Shin, Young Min;Kim, Seung Tae;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.38-43
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    • 2013
  • $Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

Effects of crystallization reagent and pH on the sulfide crystallization of Cu and Ni in fluidized bed reactor (유동층 반응기를 이용한 구리와 니켈의 황화물 결정화에 결정화 시약 및 pH가 미치는 영향)

  • Jeong, Eunhoo;Shim, Soojin;Yun, Seong Taek;Hong, Seok Won
    • Journal of Korean Society of Water and Wastewater
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    • v.28 no.2
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    • pp.207-215
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    • 2014
  • Wastewater containing heavy metals such as copper (Cu) and nickel (Ni) is harmful to humans and the environment due to its high toxicity. Crystallization in a fluidized bed reactor (FBR) has recently received significant attention for heavy metal removal and recovery. It is necessary to find optimum reaction conditions to enhance crystallization efficacy. In this study, the effects of crystallization reagent and pH were investigated to maximize crystallization efficacy of Cu-S and Ni-S in a FBR. CaS and $Na_2S{\cdot}9H_2O$ were used as crystallization reagent, and pH were varied in the range of 1 to 7. Additionally, each optimum crystallization condition for Cu and Ni were sequentially employed in two FBRs for their selective removal from the mixture of Cu and Ni. As major results, the crystallization of Cu was most effective in the range of pH 1-2 for both CaS and $Na_2S{\cdot}9H_2O$ reagents. At pH 1, Cu was completely removed within five minutes. Ni showed a superior reactivity with S in $Na_2S{\cdot}9H_2O$ compared to that in CaS at pH 7. When applying each optimum crystallization condition sequentially, only Cu was firstly crystallized at pH 1 with CaS, and then, in the second FBR, the residual Ni was completely removed at pH 7 with $Na_2S{\cdot}9H_2O$. Each crystal recovered from two different FBRs was mainly composed of CuxSy and NiS, respectively. Our results revealed that Cu and Ni can be selectively recovered as reusable resources from the mixture by controlling pH and choosing crystallization reagent accordingly.

Characteristics of CuO doped WO3 Thick Film for Gas Sensors (CuO가 첨가된 WO3 후막 가스센서 특성 연구)

  • Yu, Il;Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Yoon-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1621-1625
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    • 2010
  • Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

Synthesis of Nano Sulfur/Chitosan-Copper Complex and Its Nematicidal Effect against Meloidogyne incognita In Vitro and on Coffee Pots

  • Hong Nhung Nguyen;Phuoc Tho Tran;Nghiem Anh Tuan Le;Quoc Hien Nguyen;Duy Du Bui
    • The Plant Pathology Journal
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    • v.40 no.3
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    • pp.261-271
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    • 2024
  • Sulfur is one of the inorganic elements used by plants to develop and produce phytoalexin to resist certain diseases. This study reported a method for preparing a material for plant disease resistance. Sulfur nanoparticles (SNPs) stabilized in the chitosan-Cu2+ (CS-Cu2+) complex were synthesized by hydrolysis of Na2S2O3 in an acidic medium. The obtained SNPs/CS-Cu2+ complex consisting of 0.32% S, 4% CS, and 0.7% Cu (w/v), contained SNPs with an average size of ~28 nm as measured by transmission electron microscopy images. The X-ray diffraction pattern of the SNPs/CS-Cu2+ complex showed that SNPs had orthorhombic crystal structures. Interaction between SNPs and the CS-Cu2+ complex was also investigated by ultraviolet-visible. Results in vitro nematicidal effect of materials against Meloidogyne incognita showed that SNPs/CS-Cu2+ complex was more effective in killing second-stage juveniles (J2) nematodes and inhibiting egg hatching than that of CS and CS-Cu2+ complex. The values of LC50 in killing J2 nematodes and EC50 in inhibiting egg hatching of SNPs/CS-Cu2+ complex were 75 and 51 mg/l, respectively. These values were lower than those of CS and the CS-Cu2+ complex. The test results on the nematicidal effect against M. incognita on coffee pots showed that the SNPs/CS-Cu2+ complex was 100% effective at a concentration of 150 mg/l. Therefore, the SNPs/CS-Cu2+ complex could be considered as a biochemical material with potential for agricultural applications to control root-knot nematodes.

Low Firing Temperature Nano-glass for Multilayer Chip Inductors (칩인덕터용 저온소성 Nano-glass 연구)

  • An, Sung-Yong;Wi, Sung-Kwon
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.43-47
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    • 2008
  • [ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass has been prepared by sol-gel method. The mean particle size was 60.3 nm with narrow size distribution. The nano-galss has been used as a sintering aid for the densification of the NiZnCu ferrites. The ferrite was sintered with nano-glass sintering aids at $840{\sim}900^{\circ}C$, 2 h and the initial permeability, quality factor, density, and saturation magnetization were also measured. The initial permeability of 0.5 wt% nano-glass added toroidal sample for NiZnCu ferrites sintered at $900^{\circ}C$ was 193.3 at 1 MHz. The initial permeability and saturation magnetization were increased with increasing annealing temperature. As a result, $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass systems were found to be useful as sintering aids for multilayer chip inductors.