• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.131-131
• /
• 2013

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. The data clearly show that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ~2,700 cm2V-1s-1 at room temperature, superior to common graphene converted from solid carbon.

• Progress in Superconductivity
• /
• 제5권1호
• /
• pp.45-49
• /
• 2003

We have designed and fabricated the single-layer high $T_{c}$ SQUID magnetometer consisting of a directly coupled grain boundary junction SQUID with an inductance of 100 pH and 16 nested parallel pickup coils with the outermost dimension of 8.8 mm ${\times}$ 8.8 mm. The magnetometer was formed from a YBCO thin film deposited on an STO(100) bicrystal substrate with a misorientation angle of $30^{\circ}$. The SQUID magnetometer was further improved by optimizing the multi-loop pickup coil design for use in unshielded environments. Typical characteristics of the dc SQUID magnetometer had a modulation voltage of 40 $\mu\textrm{V}$ and a white noise of $30fT/Hz^{1}$2/. The SQUID magnetometer exhibited a 1/f noise level at 10 Hz reduced by a factor of about 3 compared with that of the conventional solid type pickup coil magnetometers and a very stable flux locked loop operation in magnetically disturbed environments.s.

• 한국재료학회지
• /
• 제4권3호
• /
• pp.280-286
• /
• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
• /
• pp.23-23
• /
• 2009

CIGS 박막 태양전지는 제조단가가 낮고 박막 태양전지 중에서 변환효율이 가장 높아 발전 가능성이 큰 태양전지로 인식되고 있다. 이미 일본, 독일, 미국을 비롯한 선진국에서는 30-50 MW 급의 양산 라인이 구축되고 있어 2010년 이후에는 본격적인 상용화가 진행될 것으로 보인다. CIGS 광흡수층은 진공증발, 셀렌화, 나노입자, 전기도금등 다양한 방식으로 제조가 가능한데 이 중에서도 동시진공증발공정은 고효율 CIGS 박막 태양전지 제조에 적합하다. 본 연구에서는 동시진공증발법을 이용하여 CIGS 박막을 증착하였으며 소다회유리/Mo/CIGS/CdS/i-ZnO/n-ZnO/Al/AR 구조의 태양전지를 제조하였다. 기판온도 모니터링을 통한 Cu 이차상 조절 기술을 이용하여 결정립이 매우 큰 CIGS 박막을 증착하였으며 Ga/(In+Ga) 조성비의 조절을 통하여 밴드갭 에너지를 최적화하였다. 또한 QCM 장치를 활용하여 용액 속에서 성장되는 CdS 박막의 두께와 특성을 조절하였다. 이러한 공정최적화를 통하여 개방전압 0.65 V, 단락전류밀도 38.8 $mA/cm^2$, 충실도 0.74 그리고 변환효율 18.8% 의 CIGS 박막 태양전지를 얻었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
• /
• pp.77-81
• /
• 2006

We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• 수산해양기술연구
• /
• 제39권4호
• /
• pp.291-297
• /
• 2003

Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows：(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

• 한국전기전자재료학회논문지
• /
• 제24권8호
• /
• pp.616-621
• /
• 2011

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

• 한국산학기술학회논문지
• /
• 제12권7호
• /
• pp.3117-3122
• /
• 2011

머리부 전후방향촬영은 종래의 증감지-필름 방사선촬영보다 디지털방사선촬영 시 입사표면선량(ESD)이 훨씬 높다. 따라서 본 연구의 목적은 부가필터를 사용하여 환자의 피폭선량을 줄이기 위한 것이다. 본 연구에서는 머리부 팬톰을 이용하여 머리부 전후방향촬영 시 부가여과판의 두께에 따른 선량 감소효과를 알아보았고, 동시에 부가여과판 사용에 따른 영상의 질적 저하의 평가를 위한 실험을 진행하였다. 선량측정은 머리부 팬톰을 머리부 전후방향촬영자 세로 위치시켜 입사표면선량과 투과선량을 0.1 mmAl으로부터 0.5 mmCu+2.0 mmAl까지 16종류의 부가여과판을 바꾸어 가며 측정하였다. 영상의 화질 평가를 위해서 총 17매의 영상을 촬영하였고 촬영된 영상은 영상의학과 전문의에게 평가를 의뢰하였다. 그 결과 부가여과판 중 0.2 mmCu+1.0 mmAl의 복합여과판을 사용한 부가여과판까지 진단적 가치가 있는 영상을 얻었고, 이 때 머리부 팬톰에 입사표면선량은 약 0.6 mGy이었다. 이 값은 국제원자력기구(IAEA)에서 권고하고 있는 머리부 후전방향촬영 시 입사표면선량 5 mGy의 12%에 불과하였다. 따라서 검사부위에 따라 적정한 부가여과판의 사용으로 환자의 피폭선량을 상당히 감소시키는 효과를 얻을 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.66-79
• /
• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.167-170
• /
• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.