• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.261-262
• /
• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회논문지
• /
• 제23권8호
• /
• pp.627-631
• /
• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

• 한국진공학회지
• /
• 제15권1호
• /
• pp.45-49
• /
• 2006

깨끗한 Cu(110)와 산소가 흡착된 Cu(110) 표면에 Cu 성장에 의한 광학적 이방성의 변화를 RDS를 이용하여 연구하였다. 250K에서 Cu를 성장하면서 성장 모드와 산소의 계면활성제 효과를 확인하였다. 두 표면에 Cu를 성장하면서 4,25eV 봉우리의 규칙적인 변화를 확인하여 layer-by-layer 모드를 확인하였다.

• Progress in Superconductivity
• /
• 제2권2호
• /
• pp.65-70
• /
• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Applied Microscopy
• /
• 제26권2호
• /
• pp.235-241
• /
• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• 한국분말재료학회지
• /
• 제19권5호
• /
• pp.362-366
• /
• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.

• 한국광물학회지
• /
• 제4권1호
• /
• pp.43-50
• /
• 1991

四成分系 Cu-Fe-Sn-S 시스템의 相關係에 대한 합성실험에서 두 개의 固溶體 타입의 合成相$(Fe, Cu, Sn)_{1+x}S$와 $Cu_{2-y}Fe_{1+y}SnS_4$가 발견되었으며 이들은 成分四面體 내에서 CuS-FeS-SnS로 표시될 수 있는 reference面의 주위에서 안정한 것으로 밝혀졌다. 煎者는 섬아연석 結晶構造를 갖고 있는 단순황화물 고용체로서 온도함수인 금속과 유황의 비율(9.7-1.0/1.0)에 따라 광범위한 화학적 안정영역을 차지하고 있다. 또산 섬아연석 超格子중에 하나인 테트라헤드라이트 結晶構造를 갖고 있는 후자는 $Cu_2FeSnS_4$-FeS conode를 따라 렌즈型의 안정범위를 갖으나 subsolidus 범위(350${\circ}C$까지) 내에서 相轉移 현상이 없고 835-862${\circ}C$에서 不調和熔融을 한다. 위 두 개의 고용체는 온도변화에 따라 相互溶解度 그리고 관련된 각각의 합성상이 화학조성이 변화하는 소위 Incorporation-type Solid Solution이다. 특히 後者의 경우 섬아연석 subcell을 기본골격으로 하는 超格子의 특징적인 양상을 X-ray 연구에서 찾을 수 있으며 이 패턴을 초격자의 안전성이 높다는 것을 암시해 주고 물리, 화학적 특성이 stoichiometric phase $Cu_2FeSnS_4$와 相異하다.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.98.2-98.2
• /
• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Bulletin of the Korean Chemical Society
• /
• 제27권3호
• /
• pp.363-367
• /
• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.1268-1269
• /
• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.