• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.112-117
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• 2018

The metal alkoxide, CuCo-glycerate nanospheres (NSs), were successfully synthesized as Cu-Co bimetallic sulfides hierarchical multi-shelled hollow nanospheres ($CuCo_2S_4$ HMHNSs) through solvothermal synthesis. In this reaction mechanism, the solvothermal temperature and the amount of glycerol as a cosurfactant play significant role to optimize the morphology of CuCo-glycerate NSs. Furthermore, $CuCo_2S_4$ HMHNSs were obtained under optimized sulfurization reaction time of 10 h via anion exchange reaction between glycerate and sulfur ions. Finally, the structural and chemical compositions of CuCo-glycerate NSs and $CuCo_2S_4$ HMHNSs were confirmed through field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and electrochemical performances.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.73-73
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• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Journal of Energy Engineering
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• v.5 no.1
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• pp.65-71
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• 1996

Decomposition reaction of methanol was conducted on Ni-Cu/SiO$_2$catalysts with several variables. Variables used in this study are S.V(Space Velocity), partial pressure of methanol, reaction temperature, and composition rate of Ni-Cu. The range of S.V is 10,000-30,000h$\^$-1/, the temperature range is 150-400$^{\circ}C$ and values of Cu/(Ni＋Cu) are 0, 0.25, 0.5, 0.75, and 1. Over Ni/SiO$_2$, and Ni-Cu/SiO$_2$, the conversion rate of decomposition reaction of methanol arrived at 100% with increasing of temperature. At this time the selectivity of CO on Ni/SiO$_2$, was suddenly decreased, but on Ni-Cu/SiO$_2$, it was still sustained highly. The main products of reaction were CO and H$_2$, and by-products were CO$_2$ and CH$_4$mainly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.467-468
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• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.36-43
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• 2000

The sulfur pressure and TRA(rapid thermal annealing) conditions of the fabricated SrS:CuCl TFEL devices were optimized to improve blue color luminance. The thickness of the phosphor layer of SrS:CuCl TFEL devices fabricated by electron beam deposition system was 6000 ~ 8000 ${\AA}$. The fabricated TFEL devices were annealed at 800 $^{\circ}C$ for 3 min. It was shown that the crystallinity of SrS:CuCl phosphor was improved by an increase in RTA temperature and RTA time. Blue color was emitted from the TFEL device with emission peak wavelength of 468 nm and 500 nm. The CIE color coordinates were x = 0.21, y = 0.33. The luminance($L_{40}$) of TFEL device strongly depended on the sulfur pressure of deposition chamber and increased from 262 cd/$m^2$ to 728 cd/m2 as the sulfur pressure increased from $8{\times}10^{-6}$ torr to $2{\times}10^{-5}$ torr.

• Journal of Hydrogen and New Energy
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• v.32 no.6
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• pp.663-668
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• 2021

For the development of highly efficient quantum dot-sensitized solar cells (QDSCs), it is important to enhance the electrocatalytic activity of the counter electrodes (CEs). Herein, a fabrication process of Cu₂S CEs are optimized for the development highly efficient QDSCs. The surface of brass film is treated with HCl solution to prepare the Cu₂S CEs, and the concentraion as well as the temperature of HCl solution are controlled. It is found that the uniformity for the thickness of prepared Cu₂S CEs is enhanced when the diluted HCl solution is used, compared to the HCl solution of standard concentration. In addition, the electrocatalytic activity of the Cu₂S CEs is also increased with the modificed process, which is confirmed by impedance data and Tafel polarization curves. As a result, the photoconversion efficiency of QDSCs is improved from 4.49% up to 5.73%, when the concentraion and temperature of the HCl treatment are efficiently optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.584-588
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• 2009

Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.