• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.627-631
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Applied Microscopy
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• v.26 no.2
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• pp.235-241
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• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• Journal of Powder Materials
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• v.19 no.5
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• pp.362-366
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• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.

• Journal of the Mineralogical Society of Korea
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• v.4 no.1
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• pp.43-50
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• 1991

Two solid solution-type phases has been experimentally found in the quaternary system Cu-Fe-Sn-S:$(Fe, Cu, Sn)_{1+x}$ and $Cu_{2-x}Fe_(1+x}SnS_4$. These solid solutions are stable around the CuS-FeS-SnS referecne plane in the composition tetrahedron. One is the sphalerite-type monosulfide solid solution which has a extensive stability range with varying degrees of sulfur/metal ratio 9.7-1.0/1.0. The other is tetrahedrite-type phase $Cu_{2-y)Fe_{1+y}SnS_4(y_{max}=0.4)$ which is stable along the $Cu_2FeSnS_4-FeS$ tie line, but shows no phase transformation in the subsolidus range and decomposes incongruently at the range of 835-862${\circ}C$, depending on the compositional variation. Particularly, the latter phase shows the characteristic superstructure reflections, indicating that it is a derivative of sphalerite structure. The stability field of these two sphalerite-type phases are defined on the basis of diffraction pattern and optical homogeneity of the synthetic materials at the temperature range of 700-400${\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.