• Asian-Australasian Journal of Animal Sciences
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• v.27 no.7
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• pp.965-973
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• 2014

Three studies were conducted to investigate whether a chelated Cu can replace $CuSO_4$ as a growth promoter in pigs. In Exp. 1, a total of 240 piglets (Large White${\times}$Landrace, $7.36{\pm}0.10kg$) were randomly allocated to 1 of 3 treatments with 8 replicates and 10 piglets per pen. Treatments included a NRC control ($CuSO_4$, 6 mg/kg), two Cu supplementations from either $CuSO_4$ or $Cu(HMTBa)_2$ at 170 mg/kg. Pigs fed $Cu(HMTBa)_2$ were 6.0% heavier than pigs fed either the NRC control or 170 mg/kg $CuSO_4$ (p = 0.03) at the end of the experiment. During the 42 days of experimental period, pigs fed $Cu(HMTBa)_2$ gained 9.0% more (p = 0.01), tended to eat more feed (p = 0.09), and had better feed efficiency (p = 0.06) than those fed $CuSO_4$. Compared with the 6 mg/kg $CuSO_4$ NRC control, liver Cu was increased 2.7 times with 170 mg/kg $CuSO_4$ supplementation, and was further increased with $Cu(HMTBa)_2$ (4.5 times, p<0.05). In Exp. 2, a total of 616 crossbred piglets (PIC, $5.01{\pm}0.25kg$) were randomly allocated to 1 of 4 treatments with 7 replicates and 22 piglets per pen. Treatments included a NRC control (from $CuSO_4$), and three pharmaceutical levels of Cu (150 mg/kg) supplemented either from C$CuSO_4$, tri-basic copper chloride ($Cu_2[OH]_3C1$), or $Cu(HMTBa)_2$. Pigs fed $CuSO_4$ or $Cu(HMTBa)_2$ had better feed efficiency (p = 0.01) and tended to gain more (p = 0.08) compared with those fed the NRC control. Pigs fed $Cu_2[OH]_2C1$ were intermediate. Pigs fed $Cu(HMTBa)_2$ had the highest liver Cu, which was significantly higher than those fed ($Cu_2[OH]_3C1$) or the negative control (p = 0.01). In Exp. 3, a total of 1,048 pigs (PIC, $32.36{\pm}0.29kg$) were allotted to 6 treatments with 8 replicates per treatment and 20 to 22 pigs per pen. The treatments included a NRC control with 4 mg/kg Cu from $CuSO_4$, a positive control with 160 mg/kg Cu from $CuSO_4$, and incremental levels of $Cu(HMTBa)_2$ at 20, 40, 80, and 160 mg/kg. During the overall experimental period of 100 days, no benefit from 160 mg/kg $CuSO_4$ was observed. Pigs fed $Cu(HMTBa)_2$ had increased ADG (linear and quadratic, $p{\leq}0.05$) and feed efficiency (linear and quadratic, $p{\leq}0.05$) up to 80 mg/kg and no further improvement was observed at 160 mg/kg for the whole experimental period. Pigs fed 80 mg/kg $Cu(HMTBa)_2$ weighed 1.8 kg more (p = 0.07) and were 2.3 kg heavier in carcass (p<0.01) compared with pigs fed 160 mg/kg $CuSO_4$. In addition, loin depth was increased with increased $Cu(HMTBa)_2$ supplementation with pigs fed 80 mg/kg $Cu(HMTBa)_2$ had the greatest loin depth (p<0.05). In summary, $Cu(HMTBa)_2$ can be used to replace high $CuSO_4$ as a growth promoter in nursery and grower-finisher pigs.

• Progress in Superconductivity and Cryogenics
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• v.1 no.1
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• pp.7-14
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• 1999

Wekk oriented $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ suppercondcting thick films were fabricared on copper tape by LiReac-PreCu (liquid reaction between a Cu-free precousor and Cu tape) method. Cu-free precursor power which is composed of $Bi_{2}Sr_{2}Ca_{5}$ was printed on a copper tape by screen printing and was heat-treated. The speciment were partially in a molten state at the heat treatment temperature (85$0^{\circ}C$~87$0^{\circ}C$). The heat heat treatments for the reaction were performed in air or low oxygen pressure in several stages. XRD analyses of the resulting Bi2Sr2CaCu2O8 superconducting tapes show that the $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ phase is dominant and a small amount of $Bi_{2} Sr_{2} Cu_{2} O_{6}$ phase is detected. Both phases are aligned in the c-axis direction.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.768-772
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• 2013

Layered mixed metal hydroxy double salts (HDS) with the formulas $(Cu_{0.75}Ni_{0.25})_2(OH)_3NO_3$ ((Cu, Ni)-HDS) and $Cu_2(OH)_3NO_3$ ((Cu, Cu)-HDS) were prepared via slow hydrolysis reactions of CuO with $Ni(NO_3)_2$ and $Cu(NO_3)_2$, respectively. The crystal structures, morphologies, bonding natures, and magnetic properties of (Cu, Ni)-HDS and (Cu, Cu)-HDS were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and a superconducting quantum interference device (SQUID). Even though (Cu, Ni)-HDS has a similar layered structure to that of (Cu, Cu)-HDS, the bonding nature of (Cu, Ni)-HDS is slightly different from that of (Cu, Cu)-HDS. Therefore, the magnetic properties of (Cu, Ni)-HDS are significantly different from those of (Cu, Cu)-HDS. The origin of the abnormal magnetic properties of (Cu, Ni)-HDS can be explained in terms of the bonding natures of the interlayer and intralayer structures.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.89-98
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• 2003

The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.

• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.458-464
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• 1997

Mg-Cu-Si과 Mg-Cu-Ge계 3원 합금에서 비정질 생성범위와 열적, 기계적 성질을 조사하였다. Mg-Cu-Si계에서는 $15{\sim}45%Cu$, $0{\sim}10%Si$, Mg-Cu-Ge계에서는 $15{\sim}45%Cu$, $0{\sim}5%Ge$의 조성범위에서 각각 비정질 단상이 생성되었고, $15{\sim}22.5%Cu$, 2.5%Si(or Ge)의 조성범위에서 생성되는 비정질상은 180도 밀착굽힘을 하여도 파단되지 않는 양호한 인성을 가지고 있었으며, $Mg_{82.5}Cu_{15}Ge_{2.5}$비정질합금의 최대인장강도는 800 MPa로 결정질 Mg기 합금의 최대치인 300 MPa에 비해 월등히 높은 값을 나타내었다. 그러고 비정질합금의 결정화는 다음과 같은 과정으로 일어났다. 1) Si(or Ge) ${\le}$ 2.5%: 비정질 ${\to}$ 비정질+$Mg_2Cu$+Mg ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 2) Si(or Ge)=5%: 비정질 ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 3) Si=10%: 비정질 ${\to}$ 비정질+$Mg_2Si$ ${\to}$ $Mg_2Si$+$Mg_2Cu$+Mg.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Journal of Korea Foundry Society
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• v.42 no.5
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• pp.273-281
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• 2022

In order to understand the solidification behavior and microstructural evolution of the Al-Cu-Si ternary eutectic alloy system, changes of the microstructure of the Al-Cu-Si ternary eutectic alloy with different cooling rates were investigated. When the mold preheating temperature is 500℃, primary Si and Al2Cu dendrites are observed, with (α-Al+Al2Cu) binary eutectic and needle-shaped Si subsequently observed. In addition, even when the mold preheating temperature is 300℃, primary Si and Al2Cu dendrites can be observed, and both (α-Al+Al2Cu+Si) areas observed and areas not observed earlier appear. When the mold preheating temperature is 150℃, bimodal structures of the binary eutectic (α-Al+Al2Cu) and ternary eutectic (α-Al+Al2Cu+Si) are observed. When the preheating temperature of the mold is changed to 500℃, 300℃, and 150℃, the greatest change is in the Si phase, and upon reaching the critical cooling rate, the ternary eutectic of (α-Al+Al2Cu+Si) forms. If the growth of the Si phase is suppressed upon the formation of (α-Al+Al2Cu+Si), the growth of both Al and Cu is also suppressed by a cooperative growth mechanism. As a result of analyzing the Al-27wt%Cu-5wt%Si ternary eutectic alloy with a different alloy design simulation programs, it was confirmed that different results arose depending on the program. A computer simulation of the alloy design is a useful tool to reduce the trial and error process in alloy design, but this effort must be accompanied by a task that increases reliability and allows a comparison to microstructural results derived through actual casting.

• Clean Technology
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• v.19 no.2
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• pp.128-133
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• 2013

Catalytic combustion of benzene over $CeO_2$-supported copper oxides has been investigated. The supported copper oxides catalysts were prepared using ball mill method and characterized by XRD, FT-IR, TEM and TPR. In the CuO/$CeO_2$ catalysts prepared using ball mill method, highly dispersed copper oxide species were shown at high loading ratio. The CuO/$CeO_2$ prepared using ball mill method showed the higher activity than those prepared using impregnation method. The catalytic activity increased with an increase in the CuO loading ratio, 10 wt% loaded CuO/$CeO_2$ catalyst giving the highest activity. In addition, the promoting of 10 wt% loaded CuO/$CeO_2$ catalyst with $Fe_2O_3$ and CoO enhanced the dispersion of CuO and then increased the catalytic activity.

• Carbon letters
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• v.5 no.4
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• pp.180-185
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• 2004

Thermolysis of $Cu(NO_3)_2{\cdot}3H_2O$ impregnated activated carbon fiber (ACF) was studied by means of XRD analysis to obtain Cu-impregnated ACF. $Cu(NO_3)_2{\cdot}3H_2O$ was converted into $Cu_2O$ around $230^{\circ}C$. The $Cu_2O$ was reduced to Cu at $400^{\circ}C$, resulting in ACF-C(Cu). Some Cu particles have a tendency to aggregate through the heat treatment, resulting in the ununiform distribution in ACF. Catalytic decomposition of NO gas has been performed by Cu-impregnated ACF in a column reactor at $400^{\circ}C$. Initial NO concentration was 1300 ppm diluted in helium gas. NO gas was effectively decomposed by 5~10 wt% Cu-impregnated ACF at $400^{\circ}C$. The concentration of NO was maintained less than 200 ppm for 6 hours in this system. The ACF-C(Cu) deoxidized NO to $N_2$ and was reduced to ACF-$C(Cu_2O)$ in the initial stage. The ACF-$C(Cu_2O)$ also deoxidized NO to $N_2$ and reduced to ACF-C(CuO). This ACF-C(CuO) was converted again into ACF-C(Cu) by heating. There was no consumption of ACF in mass during thermolysis and catalytic decomposition of NO to $N_2$ by copper. The catalytic decomposition was accelerated with increase of the reaction temperature.