• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Journal of Korea Foundry Society
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• v.35 no.4
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• pp.67-74
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• 2015

In this study, Mg-Zn alloys are investigated in terms of their thermal properties after an addition of Cu. Al element is added to improve the mechanical properties and castability in general case. However, it was excluded here because it significantly decreases the thermal conductivity. On the other hand, Zn was added as a major element, which had less influence on reducing the conductivity and can complement the mechanical properties as well. Cu was also added, and it improved the heat transfer characteristics as the amount was increased. The composition ranges of Zn and Cu are 6 wt.% and 0~1.5 wt.%, respectively. Mg-6Zn-xCu alloy was prepared by a gravity casting method using a steel mold and then the thermal conductivity and the microstructure of the as-cast material were investigated. By measuring the density_(${\rho}$), specific heat_(Cp) and thermal diffusivity_(${\alpha}$), the thermal conductivity_(${\lambda}$) was calculated by the equation ${\lambda}={\rho}{\cdot}Cp{\cdot}{\alpha}$. As the amount of Cu increased in the Mg-6Zn-xCu alloy, the heat transfer characteristics were improved, resulting in a synergistic effect which is slow when the added Cu exceeds 1 wt.%. In order to investigate the relative thermal conductivity/emission of the Mg-6Zn-xCu alloy, AZ91 and AZ31 were experimentally evaluated and compared using a separate test equipment. As a result, the Mg-6Zn-1.5Cu alloy when compared to AZ91 showed improvements in the thermal conductivity ranging from 30 to 60% with a nearly 20% improvement in the thermal emission.

• Journal of the Korean Wood Science and Technology
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• v.42 no.4
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• pp.491-498
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• 2014

In order to obtain basic data for concentration control of alkaline copper quat (ACQ) solution in wood preservative treatment, this study investigates the change of concentration and adsorption of treating solution and active ingredient, copper oxide (CuO) and didecyldimethyl ammonium chloride (DDAC), in the process of recycling of ACQ solution. Japanese larch (Larix leptolepis), Douglas-fir (Psedotsuga menziesii) and Radiata pine (Pinus radiata) were treated with ACQ solution. The active ingredient concentration of ACQ solution was decreased continuously with increase of recycling. There are differences between extent of concentration decrease of Cu (as CuO) and DDAC. DDAC was decreased more quickly and to a higher degree than Cu for all recycling. The extent of DDAC concentration decrease was remarkable than that of Cu for wood species. The amount of DDAC adsorbed into wood decreased with the increase of ACQ solution recycling, but adsorption of Cu was little difference regardless of recycling. The adsorption of Cu into wood increased as DDAC concentration decrease by recycling of ACQ solution. This is likely due to decrease of DDAC competition with Cu for the same reaction site in wood.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.133-137
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• 2014

As a preceding process for preparing several micrometer sized Ag-coated Cu flakes, ball milling of submicrometer-sized Cu particles synthesized through a wet chemical method was performed in order to convert the particles into flakes. To suppress oxidation and aggregation of the particles during ball milling, ethylene glycol and ethyl acetate were used as a medium and a surface modifying agent, respectively. Results obtained with different rotation speeds of a jar indicated that the rotation speed changes a rotating mode, and strikingly alters the final shapes and shape uniformity of Cu particles after milling. The diameter of zirconia ball was also confirmed. Although there was aggregates in the initial submicrometer-sized Cu particles, therefore, well-dispersed Cu flakes with a size of several micrometers were successfully prepared by ball milling through optimization of rotation speed, amount of ethyl acetate, and diameter of zirconia ball.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.139-144
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• 1997

Structurally, the rare earth cuprate superconductor of Nd2-xCexCuO4-$\delta$ has T' structure and has been known as having a quite complicated microstructural phenomena, so far. In order to be superconductivity, both small amount of cation substitution of Nd3+ by Ce4+ and oxygen reduction are required. In the present study the crystallographic study on the structural transition for the Nd2-xCexCuO4-$\delta$ crystal has been con-ducted by observing the CBED (Convergent Beam Electron Diffraction) pattern with STEM(Scanning Transmission Electron Microscope). Three different samples of Nd2CuO3,Nd1.85Ce0.15CuO4 and Nd1.85Ce0.15CuO3.965 were prepared by solid-state sintering and their CBED patterns were observed by STEM to study the structural transition accompanying the substitution of Ce and the reduction of oxygen. Experimental HOLZ lines of these samples were compared with those plotted by a computer-programmed simulation to de-termine the lattice parameter of Nd2-xCexCuO4-$\delta$ crystal.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.274-279
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• 1998

Optimum Cu and Mn contents in 0.05wt%C-Cu bearing hot rolled steel sheets were investigated by vickers hardness measurement, tensile test and transmission electron microscopy. It was determined that the optimum Cu and Mn contents were 1.2wt% and 0.75-0.85wt% respectively. It was confirmed by TEM observation that the coarse recipitates were fcc $\varepsilon$-Cu in 0.05%C-1.2%Cu-0.75%Mn-O.O4%Nb steel sheets. The Cu-bearing steel sheets having 780MPa of tensile strength could be fabricated by 10% pre-strain and aging treatment at $550^{\circ}C$ for 30min.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.807-812
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• 1998

Interfacial reaction and mechanical properties between Sn-Bi-X ternary alloys(X : 2Cu. 2Sb 5In) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 60days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3mm $\textrm{min}^{-1}$ to measure strength and elongation. According to the result of EDS, it is supposed that the soldered interfacial zone was composed of $\textrm{Cu}_{3}\textrm{Sn}$ and $\textrm{Cu}_{6}\textrm{Sn}_{5}$. According to the tensile test of Cu/solder joint, joint strength was decreased by aging treatment. Fractographs of Cu/Sn-Bi solder detailed the effect of aging on fracture behavior. When intermetallic was thin, the fracture occurred through the solder. But as the interfacial intermetallic is thickened, the fracture propagated along the intermetallic/solder interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.