• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Journal of Ecology and Environment
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• v.30 no.3
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• pp.271-276
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• 2007

A simple and efficient protocol was developed for culturing Cu-tolerant and Cu-accumulating plants via pre-adaptation to Cu during plant tissue culture. We induced multiple shoots from begonia (Begonia evansiana Andr.) leaf explants on MS medium supplemented with naphtaieneacetic acid and benzyladenine. After 3 months, small plantlets were transferred to MS medium supplemented with $100{\mu}M\;CuCl_2$ for pre-adaptation to Cu and cultured for 5 months. Then, these plantlets were individually planted in pots containing artificial soil. An additional 500 mg of Cu dissolved in 1/4 strength MS solution was applied to each pot during irrigation over the course of 2 months. We planted pre-adapted and control begonias in soil from the II-Kwang Mine, an abandoned Cu mine in Pusan, Korea, to examine their ability to tolerate and accumulate Cu for phytore-mediation. Pre-adapted begonias accumulated $1,200{\mu}g$ Cu/g dry root tissue over the course of 45 days. On the other hand, non-Cu-adapted controls accumulated only $85{\mu}g$ Cu/g dry root tissue. To enhance Cu extraction, chelating agents, ethylenediamine tetraacetic acid (EDTA)-dipotassiun and pyridine-2,6-dicarboxylic acid (PDA), were applied. While the chelating agents did not enhance accumulation of Cu in the roots of control begonias, EDTA application increased the level of Cu in the roots of pre-adapted begonias twofold (to $2,500{\mu}g$ Cu/g dry root tissue). Because pre-adapted begonias accumulated a large amount of Cu, mainly in their roots, they could be used for phytostabilization of Cu-contaminated soils. In addition, as a flowering plant, begonias can be used to create aesthetically pleasing remediation sites.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.744-746
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$Cu_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Korean Journal of Materials Research
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• v.6 no.2
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• pp.158-165
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• 1996

열증착기(thermal evaporator)로 증착시킨 Cu를 상온에서 3.5M CuCl2+0.5M HCI+0.5MKCI 용액을 사용하여 습식각하고 2일간 대기중 노출시킨 후 X-선 광전자 분광기를 이용하여 표면의 결합상태를 관찰하였다. 그 결과 습식식각된 Cu 표면에서는 C, O, Ci 및 Cu가 존재함을 알 수 있었다. 표면원소에 대한 오제이 전자 스펙트라(Auger electron spectra)와 광전자 스펙트라(photoelectron spectra)의 정량적인 비교를 통하여 표면의 모든 결합상태를 확인할 수 있었고 그 상대적인 양까지도 얻어낼 수 있었다. 식각된 Cu의 표면에는 Cu-Cu, 2Cu-O, Cu-Ci, Cu-2(OH), 및 Cu-2Cl의 결합상태가 존재함을 알 수 있었고, CuLMMAuger line spectrum의 관찰을 통하여 계산된 각 결합의 정량적인 비교를 검증할 수 있었다. 따라서 chemical shift가 거의 관찰되지 않아 결합상태 분리가 불가능한 식각된 구리표면의 정량적 결합상태는 각 결합상태의 상대적 비교를 통하여 얻어질 수 있음을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.658-662
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• 2000

The microstructure, adhesion strength and conductivity of electroplated Sn-Cu Films on Alloy42 lead Frame were measured for comparison. In the case of electroplated 90Sn10Cu, 99Sn1Cu, Cu$\sub$10/Sn$_3$Phase was formed and Ni$_3$Sn$_2$Phase was formed after 200$^{\circ}C$, 30min annealing. In the case of electroplated 99Sn1Cu, Cu$\sub$10/Sn, Ni$_3$Sn phases were formed and Ni$_3$Sn$_4$, Ni$_3$Sn$_4$phases were formed after 200$^{\circ}C$, 30min annealing. 90Sn10Cu film was measured better uniformity, adhesion strength and conductivity than 99Sn1Cu.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.39-45
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• 2020

The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 ℃ oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/㎠ at -0.13 V vs. RHE.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.91-97
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• 2014

With Pb-free solder joints containing Sn-Ag-Cu-based ternary alloys (Sn-1.0 wt.%Ag-0.5Cu and Sn-4.0Ag-0.5Cu) and Sn-Ag-Cu-In-based quaternary alloys (Sn-1.0Ag-0.5Cu-1.0In, Sn-1.2Ag-0.5Cu-0.4In, Sn-1.2Ag-0.5Cu-0.6In, and Sn-1.2Ag-0.7Cu-0.4In), fracture-mode change, shear strengths, and fracture energies were observed and measured under a high-speed shear test of 500 mm/s. The samples in each composition were prepared with as-reflowed ones or solid-aged ones at $125^{\circ}C$ to 500 h. As a result, it was observed that ductile or quasi-ductile fracture modes occurs in the most of Sn-Ag-Cu-In samples. The happening frequency of a quasi-ductile fracture mode showed that the Sn-Ag-Cu-In joints possessed ductile fracture properties more than that of Sn-3.0Ag-0.5Cu in the high-speed shear condition. Moreover, the Sn-Ag-Cu-In joints presented averagely fracture energies similar to those of Sn-Ag-Cu joints. While maximum values in the fracture energies were measured after the solid aging for 100 h, clear decreases in the fracture energies were observed after the solid aging for 500 h. This result indicated that reliability degradation of the Sn-Ag-Cu-In solder joints might accelerate from about that time.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.17-24
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• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.