• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 대한화학회지
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• 제53권3호
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• pp.293-301
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• 2009

일정 농도의 Pb, Cd 및 Cr이 첨가된 합성 Cu표준시료용액 (RMs)을 ICP로 여러 파장에서 Cu매트릭스 미 보정 검정곡선에 준하여 분석한 결과 모든 원소가 전 파장에서 Cu매트릭스의 영향을 받아 정확도 (Pb 140$\sim$1 090%)가 떨어졌다. Pb, Cd 및 Cr의 각각 일정 농도에 Cu의 농도를 변화시켜 분석한 결과 Cu 0.05 wt/v % (0.05 g/100 mL) 이상을 함유하면 실제 Pb, Cd 및 Cr이 첨가된 농도보다 Cu의 농도가 증가함에 따라 일정함수의 비로 감소하거나 증가하여 Cu매트릭스의 영향이 심함을 볼 수 있었다. Cu매트릭스 보정법에 의한 합성 Cu표준시료용액 (RMs)을 분석한 결과 99.9% 이상의 정확도를 보여주었다.

• 한국재료학회지
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• 제5권8호
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• pp.988-996
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• 1995

CdS/CuInSe$_2$태양전지의 광흡수층인 CuInSe$_2$박막을 In$_2$Se$_3$와 Cu$_2$Se 이원화합물을 precursor로 하여 진공증발법으로 제조하였고 특성을 분석하였다. 먼저 유리기판위에 0.5$\mu\textrm{m}$ 두께의 In$_2$Se$_3$를 susceptor온도를 변화시켜가면서 증착한 결과 40$0^{\circ}C$에서 가장 평탄하고 치밀한 박막이 형성되었다. 그 위에 Cu$_2$Se$_3$를 진공증발시켜 증착함으로써 in-situ로 CuInSe$_2$박막을 형성시키고 In$_2$Se$_3$를 추가로 증발시켜 CuInSe$_2$박막내에 존재하는 제 2상인 Cu$_2$Se를 제거시켰다. 이 경우 susceptor온도가 $700^{\circ}C$ 일때 미세구조가 가장 좋은 CuInSe$_2$박막이 형성되었으며 약 1.2$\mu\textrm{m}$ 두께에서 약 2$\mu\textrm{m}$의 결정립크기와 (112) 우선배향성을 가졌다. 추가 In$_2$Se$_3$양이 증가함에 따라 CuInSe$_2$박막의 조성편차보상으로 hole 농도가 감소하고 전기 비저항이 증가하였고, optical bandgap은 거의 일정한 값인 1.04eV의 값을 가졌다. Mo/유리기판 위에 증착한 CuInSe$_2$박막도 유리기판 위에 증착한 박막과 비슷한 미세구조를 가졌으며, 이 박막을 토대로 ZnO/CdS/CuInSe$_2$/Mo 구조를 갖는 태양전지 구현이 가능할 것으로 생각된다.

• 한국재료학회지
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• 제11권1호
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• pp.20-26
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• 2001

(hfac)Cu(1, 5-DMCOD)(1, 1, 1, 5, 5, 5-Hexafluoro-2, 4-pentanedionato Cu(I) 1, 5-dimethyl-cyclooctadine) 전구체와 He 운반기체를 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) 방법으로 Cu 박막을 형성하였으며, He 운반기체와 함께 $H_2$ gas 및 H(hfac) Ligand의 첨가가 Cu 박막 형성에 미치는 영향에 대하여 조사하였다. He운반기체만을 사용한 경우, Cu 박막의 증착율은 기판온도 180~$230^{\circ}C$에서 20~$125{\AA}/min$ 정도로 낮은 값을 보였으며, 특히 기판온도 $190^{\circ}C$에서는 매우 얇은 두께 ($700{\AA}$)이면서 낮은 비저항($2.8{\mu}{\Omega}cm$)을 갖는 Cu 박막이 형성됨을 알 수 있었다 He 운반기체와 함께 환원가스(H$_2$) 및 화학첨가제 (H (hfac) ligand)의 첨가 실험에서는 낮은 기판온도 ($180~190^{\circ}C$) 구간에서 현저하게 증착율이 증가하였으며 얇은 두께 (~$500{\AA}$)의 Cu 박막이 낮은 비저항(3.6~$2.86{\mu}{\Omega}cm$)을 갖는 것으로 나타났다. 또한 얇은 두께의 MOCVD Cu박막들의 표면 반사도(reflectance)는 $300^{\circ}C$에서 열처리한 sputter Cu의 반사도에 근접하는 우수한 surface morphology를 보였다 결국, (hfac)Cu(1,6-DMCOD) 전구체를 이용하여 얻어진 MOCVD Cu박막은 얇은 두께에서 낮은 비저항을 갖는 우수한 막질을 보였으며, Electrochemical deposition공정에서 conformal seed layer로써의 적용이 가능할 것으로 기대된다.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.351-356
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• 2014

The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

• 한국분말재료학회지
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• 제6권4호
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• pp.270-276
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• 1999

Ti-Ni-Cu alloy powders were fabricated by ball milling, and the properties of these powders were characterized. Mixed 50Ti-(50-x)Ni-xCu powders of 5 to 10at.%Cu composition were milled for 100 hours using SUS 1/4" balls in argon atmosphere. Ball to powder ratio was 20:1 and rotating speed was 100 rpm. Tensile strength, microstructure and phase transformation of ball milled Ti-(50-x)Ni-xCu powders were studied. After 100 hours milling, Ti, Ni and Cu elements were alloyed completely and an amorphous phase was formed. Amorphous phase was crystallized to martensite(B 19') and austenite(B2) after heat treatment for 1 hour at $850^{\circ}C$. As the Cu contents were increased, tensile strength of extruded 6061Al/TiNiCu was decreased, and B19'martensite phases In the TiNi particles were the causes of high tensile stress of extruded 6061Al/TiNiCu.NiCu.

• 한국분말재료학회지
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• 제5권3호
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• pp.220-226
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• 1998

W-12.8wt%Cu-7.2%Pb powders were milled at room temperature and $-100^{\circ}C$ to investigate the mechanical alloying behavior of immiscible W-Cu-Pb system and the effect of milling temperature on the extent of alloying and microstructural refinement. W-Cu-Pb powder reached steady state after further extended milling due to Pb addition, compared to the W-Cu system. The cryomilling at $-100^{\circ}C$ caused the more refinement of powder particle size, and enhanced the solubility of Cu or Pb in W, compared with milling at room temperature. In W-12.8wt%Cu-7.2%Pb powder cryomilled at $-100^{\circ}C$, the monotectic temperature of Cu-Pb as well as the melting temperature of Cu was decreased by refinement of Cu crystalline size, and the most amorphization was occurred after milling for 150 h.

• 한국표면공학회지
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• 제51권6호
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• pp.360-364
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• 2018

A facile method to fabricate freestanding CuO nanoleaves and CuO nanowires-based films was demonstrated. $Cu(OH)_2$ nanoleaves and nanowires were prepared by a hydrolysis reaction in aqueous solution including pyridine and NaOH with the tailored concentrations at room temperature. The films of freestanding CuO nanoleaves and CuO nanowires can be successfully obtained via the simple vacuum infiltration following a thermal dehydration reaction. The morphologies and crystallinity of the $Cu(OH)_2$ nanoleaves/nanowires and CuO nanoleaves/nanowires were characterized by XRD, SEM, TEM and FT-IR. The films fabricated with freestanding CuO nanoleaves and nanowires in this study may be applicable for building high-efficiency organic binder-free devices, such as gas sensors, batteries, photoelectrodes for water splitting and so on.

• 열처리공학회지
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• 제15권1호
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• pp.21-24
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• 2002

The electrode materials for welding machine in automobile industry such as Cu-Cr, Cu-Zr and Cu-$Al_2O_3$ require the high electrical conductivity and the proper hardness. Therefore the effects of solution heat treatment and aging treatment on the electrical conductivity and hardness of Cu-0.8wt%Cr and Cu-1.2wt%Cr alloys have been investigated. Cu-0.8wt%Cr alloy showed the higher electrical conductivity and hardness than Cu-1.2wt%Cr alloy and both alloys showed the better electrical conductivity at $930^{\circ}C$ among 930, 980 and $1030^{\circ}C$ solution heat treatment temperatures. The electrical conductivity and hardness in both alloys were not affected by aging treatment but remarkably affected by solution heat treatment temperature. The final drawing process reduced electrical conductivity and increased hardness more in Cu-1.2wt%Cr alloy.

• 한국세라믹학회지
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• 제30권10호
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• pp.819-822
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• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.