• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.109-111
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• 1995

We suggest the phenominological model to determine the mangetoelastic coupling coefficient in Cu/Ni/Cu thin films by considering effective anisotropy energy with magnetic film thicknesses. This indirect determination can be applied other single crystalline systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.535-536
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• 2005

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.129-129
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• 2000

태양전지는 태양광에너지를 바로 전기에너지로 전환시키는 소자이다. 최근에는 다결정 태양전지의 응용가능성에 대한 연구가 활발히 진행되어 오고 있다. 이 중 CuInSe2는 여러 가지 좋은 물성을 가지고 있어서, 저가의 고효율 태양전지를 위한 광흡수층 재료로 주목받고 있다. 현재까지 다양한 방법이 시도되었지만, 10% 이상의 고효율을 가지는 고품질을 박막을 얻는 방법은 진공증발증착법과 selenization 방법뿐이다. 이 중 진공증발증착법에 의하여 형성된 박막을 이용하여 가장 높은 효율의 태양전지를 얻을 수 있으나, 진공 장비의 대면적화가 힘들기 때문에 대면적 태양전지 제조가 힘들다는 단점이 있다. 따라서 selenization 방법을 이용하여 CuInSe2 박막을 제조하는 것이 가장 유망한 방법이라 할 수 있다. Selenization 방법은 Cu-In 금속층을 제작한 뒤 이를 selenium과 반응을 시키는 방법이다. 따라서 이 방법을 이용하여 박막을 제조할 때는 Cu-In 금속층의 물성 조절이 이후 생성되는 CuInSe2 박막의 물성향상에 필수적이다. 따라서 Cu-In 금속층의 물성에 대해 많은 연구가 이루어지고 있다. 하지만 Cu-In 이 성분계에서 알려진 반가 없다. 저온에서는 반응속도론적으로 매우 느리게 반응이 일어나기 때문에 열역학적으로 안정한 상을 얻기가 힘들기 때문이다. 따라서 본 실험에 앞서 각 제조 조건에 따른 열역학적인 안정상을 계산하였다. 그 결과, 상온에서 Cu의 양이 증가함에 따라, In$\longrightarrow$CuIn2$\longrightarrow$Cu11In9$\longrightarrow$Cu7In3 상으로 변화하였다. 9$0^{\circ}C$이하의 온도에서는 CuIn2 상이 안정하였고, 10$0^{\circ}C$ 이상의 온도에서는 Cu11In9 상 두 가지로 존재하였고, Cu/In 인가전력비를 변화시켰을 때 조성비가 선형적으로 변하였다. 즉, Cu-In 동시스퍼터링법은 원하는 조성을 간편한 방법으로 정확하게 조절할 수 있는 방법이라 할 수 있다. 증착 온도를 변화시켰을 때는 9$0^{\circ}C$ 이하의 낮은 온도에서 존재하던 CuIn2 상이 10$0^{\circ}C$이상의 온도에서는 완전히 사라지고 In과 CuIn2 상이 사라지고 In 상과 Cu11In9 상이 나타났다. 상전이를 위하여 30$0^{\circ}C$의 높은 열처리 온도가 필요한 것은, 밀 저온 안정상이 형성된 뒤 각 원소들의 확산에 의해 상전이가 일어나기 때문에 이를 위한 충분한 열에너지를 가질 수 있는 온도가 필요하기 때문이다. 조성을 일정하게 유지하면서 챔버 압력을 변화시켰을 때는 형성되는 상의 미세구조난 결정성은 일정하였다. 인가전력, 증착온도, 챔버 압력 변화에 따른 상변화는 앞서 계산한 열역학적 결과와 정확히 일치하였다. 이는 동시스퍼터링 방법이 각 입자들을 원소 단위에서 균일하게 혼합할 수 잇는 방법이고, 또 입자들이 높은 에너지를 가지고 있기 때문이다. 즉, 원소 단위에서 균일한 반응을 하고, 가장 안정한 위치로 쉽게 이동할 수 있기 때문에 열역학적으로 안정한 상을 형성할 수 있는 것이다.

• Journal of Korea Foundry Society
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• v.35 no.4
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• pp.67-74
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• 2015

In this study, Mg-Zn alloys are investigated in terms of their thermal properties after an addition of Cu. Al element is added to improve the mechanical properties and castability in general case. However, it was excluded here because it significantly decreases the thermal conductivity. On the other hand, Zn was added as a major element, which had less influence on reducing the conductivity and can complement the mechanical properties as well. Cu was also added, and it improved the heat transfer characteristics as the amount was increased. The composition ranges of Zn and Cu are 6 wt.% and 0~1.5 wt.%, respectively. Mg-6Zn-xCu alloy was prepared by a gravity casting method using a steel mold and then the thermal conductivity and the microstructure of the as-cast material were investigated. By measuring the density_(${\rho}$), specific heat_(Cp) and thermal diffusivity_(${\alpha}$), the thermal conductivity_(${\lambda}$) was calculated by the equation ${\lambda}={\rho}{\cdot}Cp{\cdot}{\alpha}$. As the amount of Cu increased in the Mg-6Zn-xCu alloy, the heat transfer characteristics were improved, resulting in a synergistic effect which is slow when the added Cu exceeds 1 wt.%. In order to investigate the relative thermal conductivity/emission of the Mg-6Zn-xCu alloy, AZ91 and AZ31 were experimentally evaluated and compared using a separate test equipment. As a result, the Mg-6Zn-1.5Cu alloy when compared to AZ91 showed improvements in the thermal conductivity ranging from 30 to 60% with a nearly 20% improvement in the thermal emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Toxicological Research
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• v.23 no.3
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• pp.279-287
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• 2007

Copper (Cu) is an essential trace element indispensable for brain development and function; either excess or deficiency in Cu can cause brain malfunction. While it is known that Cu and Fe homeostasis are strictly regulated in the brain, the question as to how systemic Fe status may influence brain Cu distribution was poorly understood. This study was designed to test the hypothesis that dietary Fe condition affects Cu transport into the brain, leading to an altered brain distribution of Cu. Rats were divided into 3 groups; an Fe-deficient (Fe-D) group which received an Fe-D diet ($3{\sim}5 mg$ Fe/kg), a control group that was fed with normal diet (35mg Fe/kg), and an Fe-overload group whose diet contained an Fe-O diet (20g carbonyl Fe/kg). Following a 4-week treatment, the concentration of Cu/Fe in serum, CSF (cerebrospinal fluid) and brain were determined by AAS, and the uptake rates of Cu into choroids plexus (CP), CSF, brain capillary and parenchyma were determined by an in situ brain perfusion, followed by capillary depletion. In Fe-D and Fe-O, serum Fe level decreased by 91% (p<0.01) and increased by 131% (p<0.01), respectively, in comparison to controls. Fe concentrations in all brain regions tested (frontal cortex, striatum, hippocampus, mid brain, and cerebellum) were lower than those of controls in Fe-D rats (p<0.05), but not changed in Fe-O rats. In Fe-D animals, serum and CSF Cu were not affected, while brain Cu levels in all tested regions (frontal cortex, striatum, hippocampus, mid brain, and cerebellum) were significantly increased (p<0.05). Likewise, the unidirectional transport rate constants $(K_{in})$ of Cu in CP, CSF, brain capillary and parenchyma were significantly increased (p<0.05) in the Fe-D rats. In contrast, with Fe-O, serum, CSF and brain Cu concentrations were significantly decreased as compared to controls (p<0.05). Cu transport was no significant change of Cu transport of serum in Fe-O rats. The mRNA levels of five Cu-related transporters were not affected by Fe status except DMT1 in the CP, which was increased in Fe-D and decreased in Fe-O. Our data suggest that Cu transport into brain and ensuing brain Cu levels are regulated by systemic Fe status. Fe deficiency appears to augment Cu transport by brain barriers, leading to an accumulation of Cu in brain parenchyma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.351-354
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• 1998

The formation of the $YBa_2Cu_30_{7_\delta}$(Y123) thick films has been investigated by a surface diffusion Imcess between $3BaCu0_2$+2CuO composite coating powder and a $Y_2BaCuO_5$(Y211). This reaction has been studied in the temperature of $930^{\circ}C$ and $940^{\circ}C$ for 2h to 10h in an oxygen atmosphere. The Y211 substrates becomes covered by co-precipitation of Y123 grains and CuO inclusions. X-ray diflractotnctn. revealed that the lager consisted of an orthorhombic crystal structure. The maximum Jc of $400A/\textrm{cm}^2$ is abtained when the specimen was heat-treated at $930^{\circ}C$ for 6h on the Y211 substrate.

• Journal of Environmental Health Sciences
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• v.13 no.1
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• pp.67-71
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• 1987

This study was intended to investigate the content of Cu, Mn, Zn in the dried milk powders except infant formula milkpowder from January to March, 1986. The content of the trace metals was determined by Atomic Absorption Spectrophotometry. The results were as follows: 1. Averages of Cu, Mn, Zn in the total samples were Cu, 0.3043 ppm Mn, 0.5101 ppm Zn, 26.006 ppm. 2. Averages and ranges of Cu, Mn, Zu in the whole milk powder were Cu, 0.2483, 0.216 - 0.48 Mn, 0.552 ppm, 0.336 - 0.732 ppm Zn, 28.961 ppm, 7.5 - 51.9 ppm. 3. Averages and ranges of Cu, Mn, Zn in the skim milk powder were Cu, 0.4095 ppm, 0.3 - 0.54 ppm Mn, 0.6907 ppm, 0.348 - 0.84 ppm Zn, 38.381 ppm, 30.6 - 55.2 ppm. 4. Averages and ranges of Cu, Mn, Zn in the modified milk powder were Cu, 0.3459 ppm, 0.12 0.948 ppm Mn, 0.2414 ppm, 0.096 - 0.348 ppm Zn, 7.752 ppm, 1.2 - 17.002 ppm. 5. It showed the highest amount of Cu, Mn, Zu in the skim milk powder group than in the other group and the lowest amount of Cu in the whole milk powder group and Mn, Zn in the modified milk group.

• Journal of Powder Materials
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• v.7 no.4
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• pp.218-227
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• 2000

It is well known that the Cu-Cr alloys are very difficult to be made by conventional sintering methods. This difficulty originates both from limited solubility of Cr in the Cu matrix and from limited sintering temperature due to high vapor pressures of Cr and Cu components at the high temperature. Densification of Cu-50%Cr Powder compacts by conventional Powder metallurgy Process has been studied. Three kinds of sintering methods were tested in order to obtain high-density sintered compacts. Completely densified Cu-Cr compacts could be obtained neither by solid state sintering method nor by liquid phase sintering method. Both low degree of shrinkage and evolution of large pores in the Cu matrix during the solid state sintering are attributed to the anchoring effect of large Cr particles, which inhibits homogeneous densification of Cu matrix and induces pore generation in the Cu matrix. In addition, the effect of undiffusible gas coming from the reduction of Cu-oxide and Cr-oxide was observed during liquid phase sintering. A two-step sintering method, solid state sintering followed by liquid phase sintering, was proved to have beneficial effect on the fabrication of high-dendsity Cu-Cr sintered compacts. The sintered compacts have properties similar to those of commercial products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.