• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.

• Asian-Australasian Journal of Animal Sciences
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• v.29 no.11
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• pp.1608-1615
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• 2016

This study was conducted to determine the solubility of copper (Cu) in two sources of copper(II) sulfate ($CuSO_4$) including monohydrate and pentahydrate and three sources of dicopper chloride trihydroxide (dCCTH) including ${\alpha}$-form (dCCTH-${\alpha}$), ${\beta}$-form (dCCTH-${\beta}$), and a mixture of ${\alpha}$- and ${\beta}$-form (dCCTH-${\alpha}{\beta}$) at different pH and a 3-step in vitro digestion assay for pigs. In Exp. 1, Cu sources were incubated in water-based buffers at pH 2.0, 3.0, 4.8, and 6.8 for 4 h using a shaking incubator at $39^{\circ}C$. The $CuSO_4$ sources were completely dissolved within 15 min except at pH 6.8. The solubility of Cu in dCCTH-${\alpha}$ was greater (p<0.05) than dCCTH-${\beta}$ but was not different from dCCTH-${\alpha}{\beta}$ during 3-h incubation at pH 2.0 and during 2-h incubation at pH 3.0. At pH 4.8, there were no significant differences in solubility of Cu in dCCTH sources. Copper in dCCTH sources were non-soluble at pH 6.8. In Exp. 2, the solubility of Cu was determined during the 3-step in vitro digestion assay for pigs. All sources of Cu were completely dissolved in step 1 which simulated digestion in the stomach. In Exp. 3, the solubility of Cu in experimental diets including a control diet and diets containing 250 mg/kg of additional Cu from five Cu sources was determined during the in vitro digestion assay. The solubility of Cu in diets containing additional Cu sources were greater (p<0.05) than the control diet in step 1. In conclusion, the solubility of Cu was influenced by pH of digesta but was not different among sources based on the in vitro digestion assay.

• Journal of Powder Materials
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• v.6 no.1
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• pp.69-74
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• 1999

The microstructure of the reagion of carters, created by Cu and W-Cu shaped charge jets, in a 1020 mild steel target has been intestiaged. The region ahead of the crater created by the Cu shaped charge jet, reveals dramatic grain refinement implying the occurrence of a dynamic recrystallization, while that of W-Cu one dose a martensitic transformation indicative of heating up to an austenitic region followed by rapid cooling.The impacting pressure calculated when the W-Cu shaped charge jet encounters the target is higher than that of the Cu one. The micro-hardness of the region ahead of the crater created by the W-Cu shaped charge jet is also higher than that of the Cu one. The microstructure of W-Cu slug remained in the inside of the craters depicts the occurrence of the remarkable elongation of W particles during the liner collaphse. From these results, the microstructural variation of the region ahead of the crater with Cu and W-Cu shaped charge jets is discussed in trems of the pressure dependency of the transformation region of ferrite and austenite phases.

• Journal of the Korean institute of surface engineering
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• v.26 no.3
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• pp.149-157
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• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.180-184
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• 2023

Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm². Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.870-876
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• 1994

In order to investigate the growth behavior of $Y_{2}Ba_{1}Cu_{1}O_{5}$(211) particles in $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$(123), 123 samples were quenched in air after heat treatment on polycrystal and single crystal MgO substrates at $1100^{\circ}C$ for various periods. 211 grains grew with the increase in holding time. The growth of 211 grains was faster on the polycrystal MgO substrate than on the single crystal MgO substrate. In the samples with the compositions of 211+xCuO($0.2\le X \le 0.8$), the growth rate of 211 grains increased with the increase in CuO content. In the sample with x=0.6 the largest 211 grains were observed. 211 grains in the $Y_{2}Ba_{1}Cu_{1.8}Sn_{0.1}O_{5+\delta}$ samples were distributed very finely and homogeneously. The retarding effect of $SnO_2$ addition on the growth of 211 grain appeared more pronounced in a CuO melt than in a $BaCuO_{2}$+ CuO melt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.658-662
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• 2000

The microstructure, adhesion strength and conductivity of electroplated Sn-Cu Films on Alloy42 lead Frame were measured for comparison. In the case of electroplated 90Sn10Cu, 99Sn1Cu, Cu$\sub$10/Sn$_3$Phase was formed and Ni$_3$Sn$_2$Phase was formed after 200$^{\circ}C$, 30min annealing. In the case of electroplated 99Sn1Cu, Cu$\sub$10/Sn, Ni$_3$Sn phases were formed and Ni$_3$Sn$_4$, Ni$_3$Sn$_4$phases were formed after 200$^{\circ}C$, 30min annealing. 90Sn10Cu film was measured better uniformity, adhesion strength and conductivity than 99Sn1Cu.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.58-61
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• 2002

In this paper, we present a new generalized k-Tree-based (CU/PE) allocation model to perform dynamic resource (CU/PE) allocation/deallocation decision for the reconfigurable MSIMD/MIMD multi-dimensional (k-D) mesh-connected architectures. Those reconfigurable multi-SIMD/MIMD systems allow dynamic modes of executing tasks, which are SIMD and MIMD. The MIMD task requires only the free sub-system; however the SIMD task needs not only the free sub-system but also the corresponding free CU. In our new k-Tree-based (CU/PE) allocation model, we introduce two best-fit heuristics for the CU allocation decision: 1) the CU depth first search (CU-DFS) in O(kN$_{f}$ ) time and 2) the CU adjacent search (CU-AS) in O(k2$^{k}$ ) time. By the simulation study, the system performance of these two CU allocation strategies was also investigated. Our simulation results showed that the CU-AS and CU-DFS strategies performed the same system performance when applied for the reconfigurable MSIMD/MIMD 2-D and 3-D mesh-connected architectures.

• Journal of Environmental Science International
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• v.11 no.1
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• pp.85-91
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• 2002

The effects of initial concentration of dissolved oxygen content, Cu(II) and EDTA in an aqueous Cu(II)-EDTA solution on $TiO_2$ photo-oxidation of EDTA were investigated using $TiO_2$ (Degussa P-25) and UV irradiation at $20{\circ}C$. In the presence of dissolved oxygen and/or Cu(II) the photo-oxidation rates of EDTA were enhanced. The rates linearly increased in the range of initial Cu(II) concentration below 1.79 mM, while abode this concentration those were kept constant. The trend or the EDTA photo-oxidation rates appeared to be akin to the Langmuir-Hinshelwood equation farm and the k values calculated were 0.05 mM/min for the free-EDTA system, and 0.17 mM/min far the Cu(II)-EDTA system. These meant the aqueous EDTA decomposition was enhanced due to weakening of the intra-molecular bond strength of EDTA by complexation with Cu(II) added. It was concluded the decomposition of aqueous EDTA by $TiO_2$ photo-oxidation was maximum in the presence of dissolved oxygen supplied by air purging and of Cu(II) with its concentration for 1:1 Cu(II)-EDTA complexation ratio.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.1-6
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• 2014

The demand for fine-pitch devices is increasing due to an increase in I/O pin count, a reduction in power consumption, and a miniaturization of chip and package. In addition non-scalability of Cu pillar/Sn cap or Pb-free solder structure for fine-pitch interconnection leads to the development of bumpless interconnection system. Few bumpless interconnect systems such as BBUL technology, SAB technology, SAM technology, Cu-toCu thermocompression technology, and WOW's bumpless technology using an adhesive have been reviewed in this paper: The key requirements for Cu bumpless technology are the planarization, contamination-free surface, and surface activation.