• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.62-62
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• 2003

고밀도 유도결합 플라즈마(high density inductively coupled plasma) 식각은 GaAs 이종접합 양극성 트랜지스터(HBTs)와 고속전자 이동도 트랜지스터(HEMTs)와 같은 GaAs 기반 반도체의 정교한 패턴을 형성하는데 더욱 많이 이용되고 있다 본 연구는 고밀도 플라즈마 소스(source)인 평판형(planar) 고밀도 유도결합 플라즈마 식각장치를 이용하여 $BCl_3$ 와 $BCl_3/Ar$ 가스에 따른 GaAs 식각결과를 비교 분석하였다. 공정변수는 ICP 소스 파워를 0-500W, RIE 척(chuck) 파워를 0-150W, 공정압력을 0-15 mTorr 이었다. 그리고 가스 유량은 20sccm(standard cubic centimeter per minute)으로 고정시킨 상태에서 Ar 첨가 비율에 따른 GaAs의 식각결과를 관찰하였다. 공정 결과는 식각률(etch rate), GaAs 대 PR의 선택도(selectivity), 표면 거칠기(roughness)와 식각후 표면에 남아 있는 잔류 가스등을 분석하였다. 20 $BCl_3$ 플라즈마를 이용한 GaAs 식각률 보다 Ar이 첨가된 (20-x) $BC1_3/x Ar$ 플라즈마의 식각률이 더 우수하다는 것을 알 수 있었다. 식각률 증가는 Ar 가스의 첨가로 인한 GaAs 반도체와 Ar 플라즈마의 충돌로 나타난 결과로 예측된다. $BCl_3$ 와 $BC1_3/Ar$ 플라즈마에 노출된 GaAs 반도체 모두 표면이 평탄하였고 수직 측벽도 또한 우수하였다. 그리고 표면에 잔류하는 성분은 Ga와 As 이외에 $Cl_2$ 계열의 불순물이 거의 발견되지 않아 매우 깨끗함을 확인하였다. 이번 발표에서는 $BCl_3$ 와 $BCl_3/Ar$ 플라즈마를 이용한 GaAs의 건식식각 비교에 대해 상세하게 보고 할 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.400-403
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• 2003

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.229-232
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• 2002

In this paper, etching characteristics of Zr-silicate in Ar/ClrCH4 plasma is studied, and possible plasma damage is investigated by fabricating MIS capacitors. We'could increase the selectivity to near 2 while keeping the etch rate of Zr-silicate to about 70 nm/min. Leakage current and flat band voltage shift of PUZr-silicate/si capacitors are measured before and after plasma etching. Using capacitor patterns with the same area but different circumference lengths, we try to separate etching damage mechanisms and to optimize the process. The leakage current of 1.2$\times$10-3 A/cm2 and smaller capacitance variation of 0.2 nF at -2V are obtained in Ar/Cl2/CF4 plasma at 200 W RF power

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.281-289
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• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• Macromolecular Research
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• v.16 no.5
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• pp.441-445
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• 2008

A series of aluminum complexes supported by $\beta$-ketoamino, ligand-bearing, 3-position substituents $LAlEt_2$ ($L=CH_3C(O)C(Cl)=C(CH_3)NAr\;(L_1)$, $L=CH_3C(O)C(H)=C(CH_3)NAr\;(L_2)$, $L=CH_3C(O)C(Ph)=C(CH_3)NAr\;(L_3)$, and $L=CH_3C(O)C(Me)=C(CH_3)NAr\;(L_4)$, $Ar=2,6-^iPr_2C6H_3$) were synthesized in situ and employed in the ring-opening polymerization (ROP) of $\varepsilon$-caprolactone ($\varepsilon$-CL) and cyclohexene oxide (CHO). The 3-position substituents on the $\beta$-ketoamino ligand backbone of the aluminum complexes influenced the catalyst activity remarkably for both ROP of $\varepsilon$-CL and CHO. Aluminum $\beta$-ketoamino complexes displayed different catalytic behavior in ROP of $\varepsilon$-CL and CHO. The order of the catalytic activity of $LAlEt_2$ was $L_1AlEt_2$>$L_2AlEt_2$>$L_3AlEt_2$>$L_4AlEt_2$ for ROP of $\varepsilon$-CL, being opposite to the electron-donating ability of the 3-position substituents on the $\beta$-ketoamino ligand, while the order of the catalytic activity for ROP of CHO was $L_1AlEt_2$>$L_3AlEt_2$>$L_4AlEt_2$>$L_2AlEt_2$. The effects of reaction temperature and time on the ROP were also investigated for both $\varepsilon$-CL and CHO.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.552-559
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• 1995

Titanium nitride films were deposited on the (100) oriented-p-type silicon substrates of RF plasma enhanced chemical vapor depositiom\n using a gaseous mixutre of TiCl$_{4}$, N$_{2}$, H$_{2}$ and Ar. The chemincal composition, structure and the rsistivituy of the films were investigated with the deposition variables such as the flow rate ratio of N$_{2}$/TiCl$_{4}$, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N$_{2}$TiCl$_{4}$ and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N$_{2}$/TiCl$_{4}$ and depostion temperature increases within proper RF pwoer, the Cl concentartion in the films decreases and the stoichiometry and crystallingiy are improved, so decreases the resistivity of the films. The films depostied under the condition of the N$_{2}$/TiCl$_{4}$ ratio of 30, the RF power of 50W and the depostion temperature of 62$0^{\circ}C$ had the Cl content of 1.5at% and the resistivity of 56㏁cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6${\mu}{\textrm}{m}$$\times$0.6${\mu}{\textrm}{m}$.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.45-50
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• 1999

Ar 기류하에서 trans-[FeH(NCCH2CH2CH2Cl)(dppe)2][BF4], 1과 KCN이 반응하여 trans-[FeH(CN)(dppe)2], 2가 생성되었다. 이 화합물의 구조가 NMR, IR, 원소분석, 그리고 X-ray 회절법으로 규명되었다. 착물 2의 결정학 자료: 단사정계 공간군 p21/c, a=13.580(1) b=20.178(2) , c=17.592(3) , β=92.22(1)o, Z=4,(wR2)=0.0659(0.1692).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• The Journal of Natural Sciences
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• v.5 no.1
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• pp.67-75
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• 1992

In the our country, especially in Yeongil and Wolsung area, abundant authigenic zeolites are found from the tuffaceous sediments and volcanic rocks of Miocene age showing wide variation in their mineralogy and abundance from horizon to horizon. The principal zeolite species identified are clinopti-lolite. mordenite. heulandite. ferrierite, and erionite. etc. Zeolite minerals are widely used in many countries in the following applications; (a) in air separation adsorption processes; (b)as desiccants; (c)in inorganic building materials; (d)in papermaking; (e)in fertilizers; (f)as soilconditioners-this application is based upon the ability of the zeolite to ion exchange with soil nutrients; (g)in the treatment of radioactive wastes; and (h)as adsorbents for toxic gases, etc. In the present paper, using natural zeolite mordenite treated with IN hydrochloric acid or IN sodium chloride solution as column packings, separation characteristics of argon, nitrogen, carbon monoxide, and methane gases have been studied by gas chromatography. By the use of mordenite treated with hydrochloric acid solution, the tailing peak of methane showed from untreated mordenite was satisfactorily reduced, although it was difficult to separate it from carbon monoxide with a column activated at $300^{\circ}C$. Using a column activated at $350^{\circ}C$, methane could be separated from carbon monoxide easily but only carbon monoxide eluted as a bad defined peak. Mordenite treated with sodium chloride solution was generally similar to chromatograms obtained by using the untreated mordenite. Both the above chemical treatments of mordenite had little effect on the separations of argon and nitrogen. The separations and the HETP values obtained from natural zeolite mordenite treated with continuously hydrochloric acid and sodium chloride solutions were almost identical with those obtained with synthetic molecular sieve 5A zeolite. On the other hand, the efficiency of column was good in the range 20~3Oml/min of the carrier helium gas rate.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2553-2555
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• 1998

A single crystal Mn-Zn ferrite was directly etched by focused $Ar^+$ laser beam in $CCl_2F_2$ gas atmosphere. AES has been performed for locally investigating the surface composition of an etched layer. MnCl, ZnCl being created after the substrate and $CCl_2F_2$ chemically reacting was remained in the vicinity of laser irradiation area because of their low vapor pressure. Various patterns using computer were formed on the substrate. The etched grooves and patterned shapes were observed by SEM measurement.