• 제목/요약/키워드: $CeO_2$ buffered r-cut sapphire

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스퍼터링과 펄스 레이저를 이용하여 $CeO_2$완충층 위에 층착된 $YBa_{2}Cu_{3}O_{7-\delta}$박막의 제작 (Fabrication of Thin $YBa_{2}Cu_{3}O_{7-\delta}$ Films on $CeO_2$Buffered Sapphire Substrate Using Combined Sputter and Pulsed Laser Deposition)

  • 곽민환;강광용;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.901-904
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    • 2001
  • For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

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CeO$_2$ 완충층에 대한 고온 열처리가 CeO$_2$ 완충층을 지닌 R-cut 사파이어 기판 우에 성장된 YBa$_2Cu_3O_{7-{\delta}}$ 박막의 표면상태에 미치는 영향 (Effects of High-temperature Annealing of CeO$_2$ Buffer Layers on the Surface Morphology of YBa$_2Cu_3O_{7-{\delta}}$ Films on CeO$_2$-buffered R-cut Sapphire Substrates)

  • 이재훈;양우일;장정문;류재수;;이상영
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.152-159
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    • 1999
  • YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.

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Effects of post-annealing temperature of CeO$_2$ buffer layers on the surface morphology, structures and microwave properties of YBa$_2$Cu$_3$O$_{7-{\delta}}$ films on sapphire

  • Yang, W.I.;Lee, J.H.;Ryu, J.S.;Ko, Y.B.;Chung, Y.S.;Hur, Jung;Lee, Sang-Young
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.201-206
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    • 2000
  • Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

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변형된 Hairpin-Type의 $YBa_2$$Cu_3$$O_{7-$\delta$}$ 대역통과 필터 (Y$Ba_2$$Cu_3$$O_{7-$\delta$}$ Modified Hairpin-Type Bandpass Filter)

  • 정구락;박상진;석중현;이은홍;강준희
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.92-96
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    • 2001
  • We have fabricated a modified hairpin-type YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) 2-pole microstrip bandpass filter with the center frequency of 5.8 GHz. We designed a hairpin-type filter with interdigital-coupled inner poles to improve the filter performance. Compared to a typical hairpin-type filter of the same size, the center frequency, the bandwidth and the insertion loss appeared smaller by 14.5% ,29.6%, and 0.55 dB, respectively. The dimensions of the filter were 13.7mm ${\times}$3.3 mm. YBCO films deposited on r-cut sapphire buffered with a CeO$_2$thin layer were used fur making the filter.

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마이크로스트립 공진기와 Rutile-loaded Cavity 공진기로 측정한 $YBa_2$$Cu_3$$O-{7-$\delta$}$박막의 마이크로파 표면저항 비교 연구 (A Comparative Study for the Microwave Surface Resistances of $YBa_2$$Cu_3$$O-{7-$\delta$}$ Films Measured with a Microstrip Resonator and a Inutile-loaded Cavity Resonator)

  • O. K. Kwon;H. J. Kwon;Lee, J. H.;Jung Hur;Lee, Sang-Young
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.86-91
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    • 2001
  • Temperature dependences of the unloaded Q(Q$_{0}$) and the resonant frequency ( $f_{0}$) of YB $a_2$C $u_3$ $O_{7-{\delta}}$ (YBCO) microstrip ring resonators and rutile-loaded cylindrical cavity resonators were measured at low temperatures. Dc magnetron-sputtered YBCO films grown on Ce $O_2$-buffered r-cut sapphire (CbS) substrates were used fur this purpose. The surface resistances ( $R_{s}$) of YBCO films measured by both a microstrip ring resonator and a TE $01\delta$/ mode rutile-loaded cylindrical cavity resonator are compared with each other. It turned out that the values of $R_{s}$ measured by the microstrip resonator technique are comparable to those by the rutile-loaded resonator technique at temperatures lower than ~50 K. However, above 50 K, the $R_{s}$ measured by the microstrip resonator technique appeared higher according to the temperature. Our results show that the current crowding effects near the edge of a microstrip resonator become more significant at temperatures near the critical temperature.emperature.e.e.e.e.e.e.

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