• Title/Summary/Keyword: $Ce-In_2O_3$

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Microwave Dielectric Properties of the MST Ceramics with Addition of Ce (Ce첨가에 따른 MST 세라믹스의 마이크로파 유전특성)

  • 최의선;박인길;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.430-433
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    • 2001
  • The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.

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Preparation and characteristics of $HfO_2$ and $CeO_2$ doped 3Y-TZP block for dental ceramic block ($HfO_2$$CeO_2$가 첨가된 3Y-TZP 치과용 블록의 제조 및 특성 평가)

  • Ji, Sang-Yong;Ji, Hyung-Bin;Park, Hong-Chae;Yoon, Seog-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.6
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    • pp.311-317
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    • 2009
  • 3Y-TZP block doped with $HfO_2$ and $CeO_2$ for dental ceramic block to the proliferation of CAD/CAM systems was prepared by heating at $800{\sim}1100^{\circ}C$ and then sintering at $1450^{\circ}C$. The influences of heating temperature and addition of $HfO_2$ and $CeO_2$ on the mechanical and chemical properties of 3Y-TZP block were investigated. Using the EDS mapping images, $HfO_2$ and $CeO_2$ was well dispersed in the 3Y-TZP matrix. 3 wt% $HfO_2$ doped block showed the optimum biaxial strength (1 GPa), while 3 wt% $CeO_2$ doped block enhanced the stability of $t-ZrO_2$ under hydrothermal atmosphere.

Effect of buffer layer on YBCO film deposited on Hastelloy substrate ($CeO_2$의 상전이에 따른 YBCO 박막의 결정성 및 특성의 변화)

  • Kim, Sung-Min;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.873-875
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    • 1999
  • We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

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Space Charge Effect on Grain Growth Kinetics of Tetragonal Zirconia Polycrystal

  • Chon, Uong
    • The Korean Journal of Ceramics
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    • v.5 no.1
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    • pp.1-11
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    • 1999
  • The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

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Microstructural property and catalytic activity of nano-sized MnOx-CeO2/TiO2 for NH3-SCR (선택적 촉매 환원법 재료로서 나노 사이즈 MnOx-CeO2/TiO2 촉매에 대한 미세 구조적 특성과 촉매활성 평가)

  • Hwang, Sungchul;Jo, Seung-hyeon;Shin, Min-Chul;Cha, Jinseon;Lee, Inwon;Park, Hyun;Lee, Heesoo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.3
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    • pp.115-120
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    • 2016
  • $CeO_2$ is used as a co-catalyst with $TiO_2$ to improve the catalytic activity of $MnO_x$ and characterization of nano-sized powder is identified with de-NOx efficiency. A comparison between $MnO_x-CeO_2/TiO_2$ and single $CeO_2$ was conducted in terms of microstructural analysis to observe the behavior of $CeO_2$ in the ternary catalyst. The $MnO_x-CeO_2/TiO_2$ catalyst was synthesized by sol-gel method and the average particle size of the single $CeO_2$ is about $285{\mu}m$ due to the low thermal stability, whereas the particle size $MnO_x-CeO_2/TiO_2$ is about 130 nm. The strong interaction between Ce and Ti was identified through the EDS mapping by transmission electron microscopy (TEM). The improvement about 20 % of $de-NO_x$ efficiency is observed in the low-temperature ($150^{\circ}C{\sim}250^{\circ}C$) and vigorous oxygen exchange by well-dispersed $CeO_2$ is the reason of catalytic activity improvement.

$Si/In/CeO_2/Si$ 박막의 Indium 분포와 photoluminescence

  • 문병식;양지훈;김종걸;박종윤
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.104-104
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    • 1999
  • Cerium dioxide 박막의 포토루미네슨에 관해서는 Cerium 4f band에서 oxygen 2p band로의 transition에 의한 발광(400nm) 현상이 보고되었다. 또한 Indium Oxide 박막의 발광(637nm0 현상이 보고되었다. 본 연구에서는 3족인 Indium을 Si/In/CeO2/Si 구조와 CeO2/Si 구조에 도핑하여 포토루미네슨스 현상을 관찰하였다. E-beam evaporator를 사용하여 Silicon(111) 기판에 Cerium dioxcide 박막을 성장시킨 경우의 두가지 시료를 분석하였다. 포토루미네슨스 관찰을 위해서 Ge-Cd laser (325nm)가 사용되었으며 Indium의 도핑양과 분포 상태를 알기 위해 SIMS와 ADP를 이용하여 분석하였다. Indium양에 대한 포토루미네슨스 변화와 열처리 후의 indium의 분포의 변화에 의한 포토루미네슨스 변화를 관찰하였다. 상온에서 In/CeO2/Si 시료와 Si/In/CeO2/Si 시료에 대한 포토루미네슨스 현상을 관찰한 결과 Si/In/CeO2/Si 시료에서만 500nm(2.5eV)에서 발광 현상이 관찰되었다. 도핑된 indium은 ADP에서는 검출되지 않고 SIMS에서만 검출되어 ADP의 detection range(1-0.1%) 이하의 양이 도핑된 것으로 추측된다. 도핑된 Indium의 양이 증가할수록 포토루미네슨스의 Intensity가 증가하였다. 또한 열처리(110$0^{\circ}C$, 1min) 후 포토루미네슨스의 peak위치가 390nm(3.18eV)로 변화하였다. Si/In/CeO2/Si에서 포토루미네슨스 현상이 관측되고 Intensity가 indium의 양에 의존하므로 완전하지 못한 Cerium dioxide의 CeOx 구조와 indium과의 결합이 포토루미네슨스의 원인으로 추측된다. 열처리 후 SIMS의 분석결과 indium의 분포가 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다.

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Fabrication and Characteristics of Y-TZP/Ce-TZP Structural Ceramics (Y-TZP/Ce-TZP 구조세라믹스의 제조 및 특성연구)

  • 이종현;이윤복;김영우;오기동;박흥채
    • Journal of the Korean Ceramic Society
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    • v.33 no.10
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    • pp.1177-1185
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    • 1996
  • Y-TZP/Ce-TZP ceramics having relative sintered densities of>95% average grain sizes of 0.36$\mu\textrm{m}$ microhar-dness of 1150 kg/mm2 fracture strength of 390-830 MPa and toughness of 6.4-10.2 MPa$.$mm1/2 were prepared by conventional sintering of 3 mol% Y2O3-ZrO2 and 12 mol% CeO2-ZrO2 powders at 1400 and 1500$^{\circ}C$ The average grain sizes of Y-TZP/Ce-TZP ceramics were mainly governed by those of Ce-TZP. White increasing Ce-TZP content toughness increased while microhardness and fracture strength decreased. With comparing microhardness and toughness fracture strength was more sensitive on not only grain size but also other factors such as microstructural and compositional variations. The densification of Y-TZP/Ce-TZP cermaics was not greatly affected by composition and soaking time at temperature over 1400$^{\circ}C$ With increasing CE-TZP content the stability of t-ZrO2 decreased under thermal aging in air whereas increased in hydrothermal atmosphere and aqueous solution.

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Effect of $CeO_2$ buffer layer thickness on superconducting properties of $YBa_2Cu_3O_{7-{\delta}}$ films grown on $Al_2O_3$ substrates ($CeO_2$ 완충층의 두께가 $Al_2O_3$ 기판 위에 성장된 $YBa_2Cu_3O_{7-{\delta}}$ 박막의 초전도 특성에 미치는 영향)

  • Lim, Hae-Ryong;Kim, In-Seon;Kim, Dong-Ho;Park, Yong-Ki;Park, Jong-Chul
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.195-201
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    • 1999
  • C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,

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Chemical Instability of $BaCeO_3$-Based Proton Conducting Oxide ($BaCeO_3$계 프로톤 전도 산화물의 화학적 불안정성)

  • Byeon, Myeong-Seop;Kang, Eun-Tae;Cho, Woo-Seok;Kim, Jin-Ho;Hwang, Kwang-Taek
    • Journal of Hydrogen and New Energy
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    • v.22 no.1
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    • pp.92-99
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    • 2011
  • Barium cerate ($BaCeO_3$) related perovskite ceramics currently dominate the high-temperature proton conductor field. Unfortunately, these materials have very stringent environmental limitations necessitating the costly and complex conditioning or cleaning of the application feed-gas. Commercial realization has been hampered, in part, because of the reactivity of $BaCeO_3$ with $CO_2$, and to some extent $H_2O$. And sintered $BaCeO_3$ decomposed at a rate comparable to the powder samples. In this article, the chemical stability and the structural changes of $BaCe_{0.9-X}Y0.1La_XO_{3-\delta}$ (X=0, 0.1, 0.2) have been systematically investigated in the atmosphere containing carbon dioxide ($CO_2$) and water vapor ($H_2O$). The sintering characteristics were studied in $1600^{\circ}C$, sintered pellets disintegrate and decompose upon contacting boiling water on the surface only.

Synthesis and Luminescence of Lu3(Al,Si)5(O,N)12:Ce3+ Phosphors

  • Ahn, Wonsik;Kim, Young Jin
    • Journal of the Korean Ceramic Society
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    • v.53 no.4
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    • pp.463-467
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    • 2016
  • $Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.