• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.301-304
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• 2002

We investigated the structural and electrical properties of Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$(BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/$SiO_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/$O_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 m (RMS at $500^{\circ}C$, Ar:6 scrim, $O_2$:6 sccm). We have found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.59-66
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• 2013

Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Particle and aerosol research
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• v.12 no.2
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• pp.37-42
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• 2016

$CeO_2$ nanoparticles were prepared by a flame spray pyrolysis from aqueous solution of cerium nitrate. The morphology, structure crystallinity and specific surface area of as-prepared nanoparticles were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), and Brunauer-Emmett-Telle (BET). The $CeO_2$ nanoparticles about 5 nm in diameter showed a cubic fluorite structure and polyhedral morphology. The average particle size increased as the cerium nitrate concentration increased. UV absorption performance of the as-prepared nanoparticles was measured by UV-visible spectroscopy. UV absorption of $CeO_2$ nanoparticles was more effective than that of commercial $TiO_2$ nanoparticles. Effect of dopants such as Ti and Zn to $CeO_2$ nanoparticles on UV absorption properties was also investigated. In case of $Ti/CeO_2$, and $Zn/CeO_2$ nanoparticles, they showed a little higher UV absorption values compared with $CeO_2$ nanoparticles. The as-prepared nanoparticles can be promising materials with high UV absorption value.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• 한국전기화학회:학술대회논문집
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• 1998.10a
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• pp.60-60
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.442-445
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• 2001

In this study, microstructural and dielectric properties of $Pb_{0.83}(La_{0.2}Ce_{0.8})_{0.08}TiO_3$(PCT) ceramics as a function of $MnO_2$ addition were investigated for 30MHz ceramic resonator application. Grain size was gradually increased according to the increase of $MnO_2$ addition amount and showed the highest value of $1.502{\mu}m$ at the 0.9wt% $MnO_2$. Moreover, density showed the highest value of $7.582 g/cm^3$ at the 0.7wt% $MnO_2$.All the composition ceramics,curie temperature was nearly constant around $330^{\circ}C$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.