• 한국결정성장학회지
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• 제13권3호
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• pp.132-138
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• 2003

수평 전기로에서 $CdIn_2Te_4$ 다결정을 용응법으로 합성하고 Bridgman법으로 tetragonal structure의 $CdIn_2Te_4$ 단견정을 성장시켰다. c축에 수직한 시료의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $8.61\times 10^{16}\textrm{cm}^3,\;242\textrm{cm}^$V .s였다. $CdIn_2Te_4$ 단결정의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 $1.4750ev - (7.69\times10^{-3})\; ev/k)\;T^2$/(T + 2147k)이었다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.2704 eV이며 spin-orbit $\Delta$so값은 0.1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n : 1일때 $A_\;{1-} B_\;{1-}$와 $C_\;{1-}$-exciton봉우리임을 알았다

• 센서학회지
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• 제12권6호
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• pp.273-281
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• 2003

수평 전기로에서 $CdIn_2Te_4$ 다결정을 합성하여 Bridgeman 법으로 3단 수직 전기로에서 $CdIn_2Te_4$ 단결정을 성장하였다. 성장된 결정의 특성은 x선 회절과 광발광 측정으로 조사하였다. $CdIn_2Te_4$ 단결정 시료는 Laue에 배면 반사법에 의해서 (001)면으로 성장되었음을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $8.61{\times}10^{16}/cm^3$, $242\;cm^2/V{\codt}s$였다. $CdIn_2Te_4$ 단결정의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni공식에 따라 계산한 결과 1.4750eV - $(7.69{\times}10^{-3}\;eV/K)T^2$/(T+2147 K)임을 확인하였다. 막 성장된(as-grown) $CdIn_2Te_4$ 단결정 시료를 Cd-, In-, Te 분위기에서 열처리하여 10K에서 Photoluminescence(PL) spectra를 측정하여 점 결함의 기원을 알아보았다. $CdIn_2Te_4$ 단결정내에서 내재된 결함들의 기원을 10 K에서 광발광을 측정하여 연구되었다. PL 측정으로 부터 얻어진 $V_{Te}$, $Cd_{int}$, $V_{Cd}$, 그리고 $Te_{int}$는 주개와 받개로 분류되어졌다. $CdIn_2Te_4$ 단결정 시료를 Cd 분위기에서 열처리하면 n형으로 변환됨을 악 수 있었고, In 분위기에서 열처리하면 열처리 이전의 PL spectra를 보이고 있어서 $I_2$, $I_1$ 및 S.A emission에 의한 PL peak에는 영향을 주지 않는다고 보았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.179-182
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• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• 한국재료학회지
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• 제13권3호
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• 센서학회지
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• 제15권6호
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• 한국결정성장학회지
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• 제6권1호
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• pp.32-43
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• 1996

$CdIn_{2}Te_{4}$ 단결정을 Bridgman방법으로 성장하였다. 성장된 $CdIn_{2}Te_{4}$ 단결정은 분말법으로 X-ray diffraction을 측정하여 tetragonal로 성장되었음을 알 수 있었고 격자상수는 Nelson-Riley 보정식을 이용하여 외삽법으로 구한 결과 $a_{0}$는 $6.215{\AA}$, $c_{0}$는 $12.390{\AA}$이었다. $CdIn_{2}Te_{4}$ 결정이 단결정임을 알아보기 위해 Laue 배면 반사법으로 측정하였는데 c축에 수평한면은 (110), c축에 수직한 면은 (001)으로 성장되었음을 알 수 있었다. 또한 van der Pauw방법으로 Hall 효과를 측정하여 운반자 농도와 이동도를 구하였으며, c축에 수직한 시료의 carrier density는 $8.75{\times}10^{23}electrons/m^{3},\;mobility는\;3.41{\times}10^{-2}m^{2}/V.s$였으며 c축에 평행한 시료의 carrier density는 $8.61{\times}10^{23}electrons/m^{3},\;mobility는\;2.42{\times}10^{-2}m^{2}/V.s$였다. 또한 Hall 계수가 양의 값이여서 $CdIn_{2}Te_{4}$ 단결정은 p형 반도체임을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.278-281
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• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.58.2-58.2
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.