• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• Journal of radiological science and technology
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• v.21 no.1
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• pp.59-64
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• 1998

[ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

• Proceedings of the KIEE Conference
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• summer
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• pp.192-194
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• 2004

At present, application of PSS/E input data for power flow , stability and fault analysis consist of only 154kV and over data(except 22.9kV data). 22.9kV(5.C) Static Condenser is in operation and installation at 22.9kV Bus of 154kV Substation. however, we assume that 22.9kV 5.C install at 154kV Bus. so, we need to study and search about critical limit for 154kV Bus standard operating Voltage according to 22.9kV 5.C Modeling Site by PSS/E Ver28

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2022.06a
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• pp.836-838
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• 2022

3D Point Cloud는 3D 콘텐츠를 더욱 실감 나게 표현하기 위한 데이터 포맷이다. Point Cloud 데이터는 3차원 공간상에 존재하는 데이터로 기존의 2D 영상에 비해 거대한 용량을 가지고 있다. 최근 대용량 Point Cloud의 3D 데이터를 압축하기 위해 V-PCC(Video-based Point Cloud Compression)와 같은 다양한 방법이 제시되고 있다. 따라서 Point Cloud 데이터의 원활한 전송 및 저장을 위해서는 V-PCC와 같은 압축 기술이 요구된다. V-PCC는 Point Cloud의 데이터들을 Patch로써 뜯어내고 2D에 Projection 시켜 3D의 영상을 2D 형식으로 변환하고 2D로 변환된 Point Cloud 영상을 기존의 2D 압축 코덱을 활용하여 압축하는 기술이다. 이 V-PCC로 변환된 2D 영상은 기존 2D 영상을 전송하는 방식을 활용하여 네트워크 기반 전송이 가능하다. 본 논문에서는 V-PCC 방식으로 압축한 V3C 데이터를 방송망으로 전송 및 소비하기 위해 MPEG Media Transport(MMT) Packet을 만드는 패킷화 방안을 제안한다. 또한 Server와 Client에서 주고받은 V3C(Visual Volumetric Video Coding) 데이터의 비트스트림을 비교하여 검증한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.224.2-224.2
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• 2013

본 연구에서는 CIGS박막 태양전지의 온도 및 시간 인가에 따른 전기적 특성 변화를 분석하였다. 실험에서는 온도 스트레스를 $25^{\circ}C$, $50^{\circ}C$, $100^{\circ}C$, $150^{\circ}C$, $200^{\circ}C$에서 각각 10시간씩 인가한 후에 Dark I-V와 C-V측정을 통해 전기적 특성 변화를 분석하였다. $25^{\circ}C$일 때를 초기 온도로 하여 특성을 측정한 것과 온도별로 노출시킨 후에 측정한 것을 비교했을 때 소자의 효율은 $100^{\circ}C$에서 감소하기 시작하였고, 인가한 온도가 높을수록 점점 많이 감소하는 모습이 나타났다. 이와 비슷하게 I-V그래프와 C-V그래프의 모습도 초기 값과 비교해서 변화하는 모습이 나타났고, 온도가 높아질수록 점점 변화하는 양이 증가하였다. I-V그래프에서 Diode ideality factor는 온도변화에 따라 초기 값 대비 증가하는 모습이 나타났다. 온도에 노출되기 전보다 노출된 후에 current와 capacitance가 감소하는 경향을 보이는데, 이는 온도의 영향으로 인해 소자의 결함이 증가하여 전하들의 반응에 영향을 주었기 때문으로 판단된다.

• Journal of Sericultural and Entomological Science
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• v.25 no.1
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• pp.44-50
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• 1983

The study was carried out to suggest on opinion of the standardization of size deviation in the existing raw silk testing method. 1. The present grade A of size deviation stipulates 4.61 to 5.80 of standard deviation for 50 to 69 denier of mean value, however, the 5.80 standard deviation with the mean values of 50 and 69 denier belong to different distribution. 2. It is reasonable that the variation coefficients of grade 2A should be lower than that of grade A. However, the present testing method shows larger variation in grade 2A than in grade A. This is illustrated 9.00 for 69 denier in grade 2A and 8.41 for 70 denier in grade A. 3. The size deviation value compares the quality of raw silk with different mean value. Therefore, the standard deviation is recommended to be replaced by the C.V. value in determining the grade of silk. 4. The C.V. have a tendency to increase with lower grades below 6A for the size deviation below 33 denier with some inconsistencies. The figures should be adjusted so that the C.V. inconsistencies size deviation below 33 denier will be corrected. 5. The standard deviation increases with size under the same grade for the size deviations above 33 denier, however, the C.V. does not vary greatly with size deviation. 6. To rectify the above-mentioned inconsistencies the C.V. conversion and curvilinear regresion correction is recommended to improve the present silk testing method 7. The table of size deviation standard are as follows: Suggested standard of size deviation, unit: C.V. Value

• Food Science and Preservation
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• v.17 no.4
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• pp.563-570
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• 2010

We sought to ferment wine from mulberry (Morus alba) juice. The soluble solid content was $9.5{\sim}14.5^{\circ}brix$ on day 6 of fermentation, and gradually fell later; sugar was not further consumed when $3^{\circ}brix$ was attained. Alcohol content rose dramatically on day 6 of fermentation, being 4.5% (v/v) at fermentation temperatures of 16C and 18C, 6.5% (v/v) at 20C, and 8.0% (v/v) at 25C, rising further to 10.5~11.5% (v/v) on day 48, at higher culture temperatures. Citric acid, malic acid, and oxalic acid were present in mulberries. The levels of both citric and oxalic acid fell after fermentation, whereas malic acid concentration increased. All of fructose, glucose, maltose, and sucrose were fermented. Electron-donating ability (EDA) was elevated to over 90% of the control value in mulberry juice diluted to 40% (v/v). SOD-like activities in juice and wine were 80.1% and 72.1% of the control value. Nitrite-scavenging abilities (NSAs) were 86.2% and 85.2% of control in undiluted juice and wine, respectively. Mulberry juice had an activation level higher than that of mulberry wine, but functionality neither rose nor fell after fermentation. Insensory evaluation, the overall wine score was better than average, at 5.00, demonstrating the commercial potential of mulberry wine.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.181-191
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• 2000

In this paper, two schemes of generating reference voltages using enhancement-mode MOS transistors and resistors are proposed. The first one is a voltage-mode scheme where the temperature compensation is made by summing a voltage component proportional to a threshold voltage and a voltage component proportional to a thermal voltage. In the second one, that is a current-mode scheme, the temperature compensation is made by summing a current component proportional to a threshold voltage and a current component proportional to a thermal voltage. The designed circuits have been simulated using a $0.65{\mu}m$ n-well CMOS process parameters. The voltage-mode circuit has a temperature coefficient less than $48.0ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.21%/V for a temperature range of $-30^{\circ}C{\sim}130^{\circ}C$ and a VDD range of $3V{\sim}12V$. The current-mode circuit has a temperature coefficient less than $38.2ppm/^{\circ}C$ and a VDD coefficient less than 0.8%/V for $-30^{\circ}C{\sim}130^{\circ}C\;and\; 4V{\sim}12V$. The power consumption of the voltage-mode and current-mode circuits are $27{\mu}W\;and\;65{\mu}W$ respectively for 5V and $30^{\circ}C$. Measurement results show that the voltage-mode reference circuit has a VDD coefficient less than 0.63%/V for $30^{\circ}C{\sim}100^{\circ}C$ and has a temperature coefficient less than $490ppm/^{\circ}C\;for\;3V{\sim}6V$. The proposed reference circuits are simple and thus easy to design. The proposed current-mode reference circuit can be designed to generate a wide range of reference voltages.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2020.11a
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• pp.166-168
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• 2020

MPEG 비디오 그룹은 MPEG-I 표준의 일부로 포인트 클라우드(Point Cloud) 압축을 위한 비디오 기반 포인트 클라우드 부호화(V-PCC)와 몰입형(immersive) 비디오 압축을 위한 MPEG Immersive Video(MIV) 표준을 개발하고 있다. 최근에는 포인트 클라우드 및 몰입형 비디오와 같은 체적형(volumetric) 비디오를 모두 압축할 수 있도록 V-PCC 와 MIV 를 통합한 V3C(Visual Volumetric Video-based Coding) 표준화를 진행하고 있다. 본 논문에서는 V3C 코덱을 사용한 3DoF+(3 Degree of Freedom plus) 비디오 부호화 방안을 분석한다. 또한 V3C 코덱의 2D 코덱으로 기존 HEVC 대신 VVC 를 사용할 경우의 부호화 성능 향상을 분석한다.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.