• Microbiology and Biotechnology Letters
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• v.21 no.6
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• pp.527-533
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• 1993

Aminolevulinic acid(ALA) was shown to be synthesized via active pathways of either C4 or C5 ALA biosynthesis in cells of a photosynthetic bacterium, Rhodocyclus gelatinosus KUP-74, where the C5 pathway was appeared to be preferntially expressed in the cells. It was strongly suggested that L-glutamine might be utilized more effectively than L-glutamate to synthesize ALA via C5 pathway in this bacterium from the fact of relationship between the cellular uptake rates of glutamate and its Gamma-derivaties and corresponded ALA productivities in vitro and in vivo.

• Applied Biological Chemistry
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• v.35 no.3
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• pp.210-217
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• 1992

A photosynthetic bacterium strain KUP-74 producing high amount of S-amino-levulinic acid(ALA) was isolated from soils, which was identified as Rhodocyclus gelatinosus. After 10 days cultivation under anaerobic-light condition at $30^{\circ}C$, 4 Klux and pH 6.8, 5 mg/l of ALA was formed extracellularly. ALA productions were increased up to 8 mg/l and 12 mg/l in cell cultivations either by the addition of 0.5% glycerol (v/v) or 10 mM of glycine and succinic acid, respectively, using Lascelles basal medium eliminated L-glutamic acid. By cultivation in the presence of 30 mM each D,L-glutamic acids and D,L-glutamines the yield of ALA showing a late induction phenomenon was reached the maximum value of 21 mg/l. Different culture times were needed to generate maximum ALA yields by the addition of initial precursors of $C_4$ and $C_5$ pathways in basal medium, as being 107 h and 262 h, respectively. 40 mg/l yield of ALA was observed by cell cultivation with the basal medium containing each 10 mM levulinic acid(LA) and glycine simultaneously.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.194-197
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• 2006

Lead-free bismuth-layered perovskite ferroelectric europium-substituted $Bi_{4}Ti_{3}O_{12}(BTO)$ thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process. $Bi(TMHD)_3,\;Eu(THMD)_3,\;Ti(OiPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from $600^{\circ}\;to\;720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BET thin films annealed at $720^{\circ}C\;was\;25.95{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1510-1513
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• 2005

The luminescent properties of $Eu^{3+}$ and $Sm^{3+}$ doped potassium tungstate phosphor were investigated. The $K_{4-3x}(WO_4)_2:Eu_x$, $Sm_y$ phosphor was produced by firing the mixed precursors, followed by re-firing with a flux. The re-firing process provided the clean surface to the particles. The excitation spectra showed that the strong absorption in the region of ultra violet light occurred due to the high europium doping concentration. The incorporation of europium to potassium tungstate was easier, compared to other host materials. The excitation spectra could be controlled by the small addition of samarium. The increase of energy absorption around 405nm was assigned to the $Sm^{3+}$ ions. The comparison between real x-ray diffraction and simulated one revealed that the crystal structure of $K_{4-3x}(WO_4)_2:Eu_x,Sm_y$ phosphor is monoclinic with a space group, C2/c.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• Bulletin of the Korean Chemical Society
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• v.22 no.5
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• pp.493-498
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• 2001

An efficient and eco-friendly approach to N-unsubstituted ${\beta}-lactams$ has been developed using mostly water as the reaction medium. This methodology was applied to the synthesis of N-unsubstituted 3-hydroxy-4-phenyl-2-azetidinone derivatives (inclu ding 15N-labeled version) which are suitable precursors for the C-13 side chain of taxol and its analogs.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• Journal of Microbiology and Biotechnology
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• v.4 no.3
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• pp.191-194
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• 1994

Acetoin and ammonia, the precursors of tetramethylpyrazine (TMP) having "nutty " or "roasted" flavors, were produced by cultivating Lactococcus lactis ssp. lactis biovar. diacetilactis FC1. The effects of the volume concentration ratio (VCR) of cell-free medium on the formation of TMP were investigated using a rotary evaporator at $70^{\circ}C than at 80^{\circ}C$. As the VCR increased, the formation of TMP and the conversion ratio of acetoin to TMP increased. More TMP were formed at $70^{\circ}C than at 80^{\circ}C$. As the VCR increased, the concentration of acetoin decreased implying the formation of TMP from acetoin and ammonia.