• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 멤브레인
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• 제25권5호
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• pp.406-414
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• 2015

본 연구에서는 막 축전식 탈이온 공정에 적용하기 위해 온도와 시간을 달리하여 술폰화 Poly(VDF-co-hexafluoropropylene) copolymers (PVDF-co-HFP)을 합성 후 캐스팅법에 의해 양이온교환막이 제조되었다. 술폰화 PVDF (SPVDF)는 Fourier-transform infrared (FT-IR), $^1H$ Nuclear magnetic resonance ($^1H$ NMR)를 통해 구조확인을 하였고, X-ray Photoelectron Spectroscopy (XPS)를 통해 화학조성에 대한 정량적 분석을 하였다. 막 성능은 함수율 및 이온교환용량과 전기저항을 측정하였고. $60^{\circ}C$에서 7시간 술폰화한 SPVDF 멤브레인이 이온교환용량 0.89 meq/g, 함수율 21.5%, 전기저항 $3.70{\Omega}{\cdot}cm^2$로 가장 우수하였다. 수중 이온제거 특성을 막 축전식 탈이온 방법(MCDI)으로 전압(0.9~1.5 V), 유속(10~40 mL/min)을 변수로 SPVDF의 탈염 특성을 확인하여 MCDI 공정에 적용가능 여부를 평가하였다. MCDI 충방전 시험 결과 최대 탈염제거율은 62.5%이었다.

• Current Photovoltaic Research
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• 제5권1호
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• pp.15-19
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• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• 대한핵의학회지
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• 제10권1호
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• pp.21-34
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• 1976

The diagnosis of iron deficiency rests upon the correct evaluation of body iron stores. Morphological interpretation of blood film and the red cell indices are not reliable and often absent in mild iron deficiency. Serum iron levels and iron-binding capacity are more sensitive indices of iron deficiency, but they are often normal in iron depletion and mild iron deficiency anemia. They are also subject to many variables which may introduce substantial errors and influenced by many pathologic and physiologic states. Examination of the bone marrow aspirate for stainable iron has been regarded as one of the most sensitive and reliable diagnostic method for detecting iron deficiency, but this also has limitations. Thus, there is still need for a more practical, but sensitive and reliable substitute as a screening test of iron deficiency. Pollack et al. (1965) observed that the intestinal absorption of cobalt was raised in iron-deficient rats and Valberg et al. (1969) found that cobalt absorption was elevated in patients with iron deficiency. A direct correlation was demonstrated between the amounts of radioiron and radiocobalt absorbed. Unlike iron, excess cobalt was excreted by the kidney, the percentage of radioactivity in the urine being directly related to the percentage absorbed from the gastrointestinal tract. Recently a test based on the urinary excretion of an oral dose of $^{57}Co$ has been proposed as a method for detecting iron deficiency. To assess the diagnostic value of urinary cobalt excretion test cobaltous chloride labelled with $1{\mu}Ci\;of\;^{58}Co$ was given by mouth and the percentage of the test dose excreted in the urine was measured by a gamma counter. The mean 24 hour urinary cobalt excretion in control subjects with normal iron stores was 6.1% ($1.9{\sim}15.2%$). Cobalt excretion was markedly increased in patients with iron deficiency and excreted more than 29% of the dose. In contrast, patients with anemia due to causes other than iron deficiency excreted less than 27%. Hence, 24 hour urinary cobalt excretion of 27% or less in a patient with anemia suggets that the primary cause of the anemia is not iron deficiency. A value greater than 27% in an anemic subject suggests that the anemia is caused by iron deficiency. The cobalt excretion test is a simple, sensitive and accurate method for the assessment of body iron stores. It may be particularly valuable in the epidemiological studies of iron deficiency and repeated evaluations of the body iron stores.

• 대한화학회지
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• 제63권6호
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• KIEAE Journal
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• 제17권1호
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• pp.69-75
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• 2017

Purpose: Heat transfer analysis of recently developed 'slim type double-skin system window' were presented. This window system is designed for curtain wall type façade that main energy loss factor of recent elegant buildings. And the double skin system is the dual window system integrated with inner shading component, enclosed gap space made by two windows when both windows were closed and shading component effectively reflect and terminate solar radiation from outdoor. Usually double-skin system requires much more space than normal window systems but this development has limited by 270mm, facilitated for curtain wall façade buildings. In this study, we estimated thermophysical phenomena of our double-skin curtain wall system window with solar load conditions at the summer season. Method: A fully 3-Dimentional analysis adopted for flow and convective and radiative heat transfer. The commercial CFD package were used to model the surface to surface radiation for opaque solid region of windows' frame, transparent glass, fluid region at inside of double-skin and indoor/outdoor environments. Result: Steep angle of solar incident occur at solar summer conditions. And this steep solar ray cause direct heat absorption from outside of frame surface rather than transmitted through the glass. Moreover, reflection effect of shading unit inside at the double-skin window system was nearly disappeared because of solar incident angle. With this circumstances, double-skin window system effectively cuts the heat transfer from outdoor to indoor due to separation of air space between outdoor and indoor with inner space of double-skin window system.

• 한국방사선학회논문지
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• 제5권2호
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• pp.93-96
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• 2011

현재 광도전체 물질을 이용한 직접변환방식의 방사선 검출기 연구가 활발히 진행되고 있다. 이러한 광도전체 물질 중 상용화된 비정질 셀레늄(a-Se)에 비해 요오드화수은($HgI_2$) 광도전체 화합물은 고에너지에 대한 높은 흡수율과 민감도를 가지는 것으로 보고되고 있다. 또한 이러한 광도전체 필름은 발생된 신호의 검출효율은 상하부 전극크기에 의한 전기장의 세기 및 기하학적 분포에 많은 영향을 미치는 것으로 보고되고 있다. 이에 본 연구는 $HgI_2$ 광도전체 필름에서 상하부 전극의 크기에 따른 X선 검출특성을 조사하였다. 시편제작은 기존의 진공 증착법이 두꺼운 대면적 필름제조가 어렵다는 문제점을 해결하고자 페이스트 인쇄법을 이용하여 인듐전극이 코팅된 유리기관위에 제작하였으며, 시편의 두께를 $150{\mu}m$, 면적크기를 $3cm{\times}3cm$ 크기로 제조하였다. 상부전극은 마그네틱 스퍼터링법을 이용하여 $3cm{\times}3cm$, $2cm{\times}2cm$, $1cm{\times}1cm$의 크기로 ITO(indium-tin-oxide)를 진공 증착하였다. 특성평가를 위해 X선 선량에 대한 민감도와 누설전류, 신호대잡음비를 측정하여 필름의 전기적 검출 특성을 정량적으로 평가하였다. 그 결과 상부전극의 크기가 증가함에 따라 검출된 신호의 크기가 다소 증가하는 경향을 보였다. 하지만, 전극크기의 증가에 따른 누설전류 또한 증가함으로써 신호대잡음비는 오히려 감소하는 것을 확인할 수 있었다. 이러한 결과로부터 향후 광도전체를 적용한 X선 영상검출기 개발에 있어 상부전극의 최적크기와 구조설계가 고려되어야 할 것으로 사료된다.