• 제목/요약/키워드: $CH_4$ Selectivity

검색결과 187건 처리시간 0.026초

플라즈마 이용 메탄 분해 특성 (Characteristics of $CH_4$ Decomposition by Plasma)

  • 김관태;이대훈;차민석;류정인;송영훈
    • 한국연소학회지
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    • 제10권4호
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    • pp.24-32
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    • 2005
  • Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

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CH4 플라즈마에 따른 TiN 박막 표면의 식각특성 연구 (The Etch Characteristics of TiN Thin Film Surface in the CH4 Plasma)

  • 우종창;엄두승;김관하;김동표;김창일
    • 한국표면공학회지
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    • 제41권5호
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    • pp.189-193
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    • 2008
  • In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

$CH_4$/Ar 플라즈마를 이용한 TiN 박막의 식각특성 연구 (The etch characteristics of TiN thin films using in $CH_4$/Ar plasma)

  • 우종창;엄두승;김관하;김동표;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.247-248
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    • 2008
  • The etching characteristics of Titanium Nitride (TiN) and etch selectivity of TiN to $SiO_2$ and $HfO_2$ in $CH_4$/Ar plasma were investigated. It was found that TiN etch rate shows a non-monotonic behavior with increasing both Ar fraction in $CH_4$ plasma, RF power, and gas pressure. The maximum TiN etch rate of nm/min was obtained for $CH_4$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. From these data, the suggestions on the TiN etch characteristics were made.

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$Ar/Cl_2$ plasma에서 $CH_4$ 첨가에 따른 BLT 박막의 식각특성 및 선택비 향상 (Improving the etch properties and selectivity of BLT thin film adding $CH_4$ gas in $Ar/Cl_2$ plasma)

  • 김종규;김관하;김경태;우종창;김창일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1321-1322
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    • 2007
  • $Ar/Cl_2$, $Ar/CH_4$$Ar/Cl_{2}/CH_{4}$ 유도결합 플라즈마의 가스 혼합비에 따른 BLT 박막의 식각 메커니즘과 선택비, 식각 후 박막 표면의 조성변화를 조사하였다. BLT 박막의 최대식각률은 $Ar/Cl_2$ 플라즈마에서의 Ar 가스 혼합비가 80%일 때 50.8 nm의 값을 보였다. 이 때, 1sccm의 $CH_4$ 첨가를 통하여 선택비와 식각률을 개선할 수 있었다. 박막 표면의 xPS 분석을 통해 BLT 박막 표면의 조성변화는 Cl 원자와의 반응에 의한 화학적 식각 손상이 H 원자와의 반응에 의한 그것보다 크다는 것을 알 수 있었다.

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Gas Permeation Properties of Hydroxyl-Group Containing Polyimide Membranes

  • Jung, Chul-Ho;Lee, Young-Moo
    • Macromolecular Research
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    • 제16권6호
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    • pp.555-560
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    • 2008
  • A series of hydroxyl-group containing polyimides (HPIs) were prepared in order to investigate the structure-gas permeation property relationship. Each polymer membrane had structural characteristics that varied according to the dianhydride monomers. The imidization processes were monitored using spectroscopic and thermog-ravimetric analyses. The single gas permeability of He, $H_2$, $CO_2$, $O_2$, $N_2$ and $CH_4$ were measured and compared in order to determine the effect of the polymer structure and functional -OH groups on the gas transport properties. Surprisingly, the ideal selectivity of $CO_2/CH_4$ and $H_2/CH_4$ increased with increasing level of -OH incorporation, which affected the diffusion of $H_2$ or the solubility of $CO_2$ in HPIs. For $H_2/CH_4$ separation, the difference in the diffusion coefficients of $H_2$ and $CH_4$ was the main factor for improving the performance without showing any changes in the solubility coefficients. However, the solubility coefficient of $CO_2$ in the HPIs increased at least four fold compared with the conventional polyimide membranes depending on the polymer structures. Based on these results, the polymer membranes modified with -OH groups in the polymer backbone showed favorable gas permeation and separation performance.

Fabrication and characterization of silicon-based microsensors for detecting offensive $CH_3SH\;and\; (CH_3)_3N$ gases

  • Lee, Kyu-Chung;Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • 제6권1호
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    • pp.38-42
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    • 2008
  • Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromachining techniques. The sensing materials used to detect the offensive $CH_3SH$ and $(CH_3)_3N$ gases are 1 wt% Pd-doped $SnO_2$ and 6 wt% $Al_2O_3$-doped ZnO, respectively. The optimum operating temperatures of the devices are $250^{\circ}C$ and $350^{\circ}C$ for $CH_3SH$ and $(CH_3)_3N$, respectively and the corresponding heater power is, respectively, about 55mW and 85mW. Excellent thermal insulation is achieved by the use of a double-layer membrane: i.e. $0.2{\mu}m$-thick silicon nitride and $1.4{\mu}m$-thick phosphosilicate glass. The sensors are mechanically stable enough to endure the heat cycles between room temperature and $350^{\circ}C$, at least for 30 days.

디젤 자열개질 가스 내 포함된 $C_2H_4$ 제거를 위한 후개질기 촉매 활성 실험 (Activity test of post-reforming catalyst for removing the ethylene in diesel ATR reformate)

  • 윤상호;배중면;이상호
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.218-221
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    • 2009
  • Solid oxide fuel cells (SOFCs), as high-temperature fuel cells, have various advantages. In some merits of SOFCs, high temperature operation can lead to the capability for internal reforming, providing fuel flexibility. SOFCs can directly use CH4 and CO as fuels with sufficient steam feeds. However, hydrocarbons heavier than CH4, such as ethylene, ethane, and propane, induce carbon deposition on the Ni-based anodes of SOFCs. In the case of the ethylene steam reforming reaction on a Ni-based catalyst, the rate of carbon deposition is faster than among other hydrocarbons, even aromatics. In the reformates of heavy hydrocarbons (diesel, gasoline, kerosene and JP-8), the concentration of ethylene is usually higher than other low hydrocarbons such as methane, propane and butane. It is importatnt that ethylene in the reformate is removed for stlable operation of SOFCs. A new methodology, termed post-reforming was introduced for removing low hydrocarbons from the reformate gas stream. In this work, activity tests of some post-reforming catalysts, such as CGO-Ru, CGO-Ni, and CGO-Pt, are investigated. CGO-Pt catalyst is not good for removing ethylene due to low conversion of ethylene and low selectivity of ethylene dehydrogenation. The other hand, CGO-Ru and CGO-Ni catalysts show good ethylene conversion, and CGO-Ni catalyst shows the best reaction selectivity of ethylene dehydrogenation.

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$(CH_3)_3N$ 가스 감지용 ZnO 박막 가스 센서의 제조 (Fabrication of ZnO thin film gas sensor for detecting $(CH_3)_3N$ gas)

  • 신현우;박현수;윤동현;홍형기;권철한;이규정
    • E2M - 전기 전자와 첨단 소재
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    • 제8권1호
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    • pp.21-26
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    • 1995
  • Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

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