• Title/Summary/Keyword: $CHF_3$

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A study on etching mechanism of SBT thin flim by using Ar/$CHF_3$plasma (Ar/$CHF_34$플라즈마를 이용한 SBT 박막에 대한 식각 메카니즘 연구)

  • 서정우;장의구;김창일;이원재;유병곤
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.183-187
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    • 2000
  • In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

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Etching characteristic of SBT thin film by using Ar/$CHF_3$ Plasma (Ar/$CHF_3$ 플라즈마를 이용한 SBT 박막에 대한 식각특성 연구)

  • 서정우;이원재;유병곤;장의구;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.41-43
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    • 1999
  • Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

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The Effect of the Anti-corrosion by$CHF_3$ Treatment after Plasma Etching of Al Alloy Films (Al 합금막의 식각후 $CHF_3$ 처리에 의한 부식억제 효과)

  • 김창일;권광호;윤용선;백규하;남기수;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.517-521
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    • 1998
  • After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.

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Experimental Study of the Ultrasonic Vibration Effects on CHF Occurring on Inclined Flat Surfaces (초음파 진동이 경사진 평판에서의 CHF에 미치는 영향에 대한 실험연구)

  • 정지환;김대훈;권영철
    • Journal of Energy Engineering
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    • v.12 no.2
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    • pp.139-144
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    • 2003
  • Augmentation of CHF by ultrasonic vibration in water pool is experimentally investigated under pool boiling condition. The experiments are carried out using copper coated plates and distilled water. Measurements of CHF on flat plate heated surface were made with and without ultrasonic wave and with variations in inclined angle of the surface and water subcooling. Experimental apparatus consists of a bath, power supply, test section, ultrasonic generator, and data acquisition system. The measurements show that ultrasonic wave enhances CHF and its extent is dependent upon inclination angle as well as water subcooling. The rate of increase in CHF increases with an increase in water subcooling while it decreases with an increase in inclination angle. Visual observation shows that the cause of CHF augmentation is closely related with the dynamic behavior of bubble generation and departure in acoustic field.

Construction of Killer Yeasts by Spheroplast Fusion (포도주용 Killer Yeast의 개발)

  • Choi, Eon-Ho;Chung, Eun-Young;Chung, Won-Chul
    • Applied Biological Chemistry
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    • v.31 no.1
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    • pp.26-32
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    • 1988
  • This study was performed to construct killer wine yeasts which might suppress the growth of wild yeasts, reduce the consumption of starter and condense the fermentation period. Saccharomyces cerevisiae M524, a commercial wine yeast, was treated with N-methyl-N'-nitro-N-nitrosoguanidine to induce auxotrophic mutants, i.e., CHM $2(thr^-)$, CHM 3 $(asp^-)$ and CHM 6 $(tyr^-)$. These auxotrophs were fused successfully with a killer yeast, S. cerevisiae $1368R({\alpha}\;his\;4\;kar\;1-1(kil-k)\;(k_0)$, respiratory deficient) using sphoroplast techniques and the fusants were designated as CHF 21$(th^-\;kil^+)$, CHF 22$(thr^-\;kil^+)$, CHF 31$(asp^-\;kil^+)$ and GHF 61$(tyr^-\;kil^+)$. Combined cultivation of CHF 31 with 1368R or S. cerevisiae $5{\times}47$ (killer sensitive) proved out that CHF 31 had the characteristic of killing and produced the same amount of ethanol as the prototroph, M524.

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Prediction of Critical Heat Flux in Fuel Assemblies Using a CHF Table Method

  • Chun, Tae-Hyun;Hwang, Dae-Hyun;Bang, Je-Geon;Baek, Won-Pil;Chang, Soon-Heung
    • Proceedings of the Korean Nuclear Society Conference
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    • 1997.10a
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    • pp.534-539
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    • 1997
  • A CHF table method has been assessed in this study for rod bundle CHF predictions. At the conceptual design stage for a new reactor, a general critical heat flux (CHF) prediction method with a wide applicable range and reasonable accuracy is essential to the thermal-hydraulic design and safety analysis. In many aspects, a CHF table method (i.e., the use of a round tube CHF table with appropriate bundle correction factors) can be a promising way to fulfill this need. So the assessment of the CHF table method has been performed with the bundle CHF data relevant to pressurized water reactors (PWRs). For comparison purposes, W-3R and EPRI-1 were also applied to the same data base. Data analysis has been conducted with the subchannel code COBRA-IV-I. The CHF table method shows the best predictions based on the direct substitution method. Improvements of the bundle correction factors, especially for the spacer grid and cold wall effects, are desirable for better predictions. Though the present assessment is somewhat limited in both fuel geometries and operating conditions, the CHF table method clearly shows potential to be a general CHF predictor.

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AN EXPERIMENTAL STUDY ON POST-CHF HEAT TRANSFER FOR LOW FLOW OF WATER IN A $3\times3$ ROD BUNDLE

  • MOON SANG-KI;CHUN SE-YOUNG;CHO SEOK;KIM SE-YUN;BAEK WON-PIL
    • Nuclear Engineering and Technology
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    • v.37 no.5
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    • pp.457-468
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    • 2005
  • An experimental study on post-CHF heat transfer has been performed with a $3\times3$ rod bundle using a vertical steam-water two-phase flow at low flow conditions. The effects of various parameters on the post-CHF heat transfer are investigated and the reasons for the parametric effects are discussed. As the heat transfer regime changes from CHF to post-CHF, the radial wall temperature distribution is changed depending on the pressure and the mass flux conditions. The superheat of the fluid increases considerably with an increase of the wall temperature (or heat flux) and with a decrease of the mass flux. This implies, indirectly, a strong thermal non-equilibrium at high wall temperature and low mass flux conditions. In order to improve the prediction accuracy of the existing post-CHF correlations, it is necessary to perform more experiments, particularly direct measurement of the vapor superheat, and to modify the correlation by considering a strong thermal non-equilibrium at low flow and low pressure conditions.

Effect of Spacer Grids on CHF at PWR Operating Conditions

  • Ahn, Seung-Hoon;Jeun, Gyoo-Dong
    • Nuclear Engineering and Technology
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    • v.33 no.3
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    • pp.283-297
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    • 2001
  • The CHF in PWR rod bundles is usually predicted by the local flow correlation approach based on subchannel analysis while difficulty exists due to the existence of spacer grids especially with mixing vanes. In order to evaluate the effect of spacer grids on CHF, the experimental rod bundle data with various types of spacer grids were analyzed using the subchannel code, COBRA-IV-i. For the Plain grid data, a CHF correlation was described as a function of local flow conditions and heated length, and then the residuals of the CHF in mixing vaned grids predicted by the correlation were examined in various kinds of grids. In order to compensate for the residual, three parameters, distances between grids and from the last grids to the CHF site, and equivalent hydraulic diameter were introduced into a grid parameter function representing the remaining effect of spacer grids predicted most of the CHF data points in plaing grids within $\pm$20 percent error band. Good agreement with the CHF data was also shown when the grid parameter function for mixing vaned grids of a specific design was used to compensate for the residuals of the CHF data predicted by the correlation.

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The Characteristics of Residual Films on Silicon Surface $CHF_3/C_2F_6$ Reactive Ion Etching ($CHF_3/C_2F_6$ 플라즈마에 의한 실리콘 표면 잔류막의 특성)

  • 권광호;박형호;이수민;강성준;권오준;김보우;성영권
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.145-152
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    • 1992
  • Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

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Effect of Inclination Angle and Size of Heated Surface on Pool Boiling CHF

  • Yang, Soo-Hyung;Baek, Won-Pil;Chang, Soon-Heung
    • Proceedings of the Korean Nuclear Society Conference
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    • 1999.05a
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    • pp.155-155
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    • 1999
  • Pool boiling critical heat flux (CHF) have been investigated using plate type test sections with different widths (3 cm & 4 cm) and lengths (10 cm, IS cm & 20 cm) under various incli- nation angles. As the inclination angle increases from $0^{\circ}$ (horizontally facing downward plate) to $30^{\circ}$, CHF sharply increases. After that angle, CHF gradually increases with the increase of the inclination angle. There must be a transition angle between $0^{\circ}$ and $30^{\circ}$, at which the CHF increase rate remarkably changes. According to the comparison of present and previous ex- periments, the transition angle may be affected by heater size and increase with the increase of heater size. The size effect of heated surface on CHF is noticeable in the L15 & L20 series and W4 series; however, it seems to be difficult to find the size effect in L10 series and W3 series.

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