• Title/Summary/Keyword: $CF_4$/Ar and $SF_6$/Ar

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Fluorine-based inductively coupled plasma etching of ZnO film (ZnO 박막의 fluorine-계 유도결합 플라즈마 식각)

  • Park, Jong-Cheon;Lee, Byeong-Woo;Kim, Byeong-Ik;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.6
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    • pp.230-234
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    • 2011
  • High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

Surface Morphology and Characteristics of LiNbO3 Single Crystal by Helicon Wave Plasma Etching (Helicon Wave Plasma에 의해 식각된 단결정 LiNbO3의 표면 형상 및 특성)

  • 박우정;양우석;이한영;윤대호
    • Journal of the Korean Ceramic Society
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    • v.40 no.9
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    • pp.886-890
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    • 2003
  • The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.

Numerical Investigation of Ion and Radical Density Dependence on Electron Density and Temperature in Etching Gas Discharges (식각공정용 가스방전에서 이온 및 활성종 밀도의 전자밀도 및 온도 의존성에 대한 수치해석적 분석)

  • An, Choong-Gi;Park, Min-Hae;Son, Hyung-Min;Shin, Woo-Hyung;Kwon, Deuk-Chul;You, Shin-Jae;Kim, Jung-Hyung;Yoon, Nam-Sik
    • Journal of the Korean Vacuum Society
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    • v.20 no.6
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    • pp.422-429
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    • 2011
  • Dependence of radical and ion density on electron density and temperature is numerically investigated for $Cl_2$/Ar, $CF_4$, $CF_4/O_2$, $CF_4/H_2$, $C_2F_6$, $C_4F_8$ and $SF_6$ discharges which are widely used for etching process. We derived a governing equation set for radical and ion densities as functions of the electron density and temperature, which are easier to measure relatively, from continuity equations by assuming steady state condition. Used rate coefficients of reactions in numerical calculations are directly produced from collisional cross sections or collected from various papers. If the rate coefficients have different values for a same reaction, calculation results were compared with experimental results. Then, we selected rate coefficients which show better agreement with the experimental results.