• 공업화학
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• 제7권6호
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• pp.1192-1203
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• 1996

알루미늄 및 티타늄 알콕사이드의 가수분해방법을 인용하여 고온수중에 적용할 수 있는 $Al_2O_3-TiO_2$ 복합옥사이드형 흡착제를 제조하였다. 제조한 흡착제는 $600{\sim}1400^{\circ}C$의 온도로 하소되었으며, 결정전이, 열적 특성, 비표면적 등의 물성변화를 알아 보기 위하여 X선회절, 적외선분광분석, 열분석 전자현미경 관찰, BET 방법에 의한 측정 등을 수행하였다. 그리고 Autoclave를 이용한 회분식 흡착실험으로 이 흡착제들의 $TiO_2$ 함량 및 하소 온도 변화에 따르는 고온수중에서의 $Co^{2+}$ 흡착 특성을 알아 보았다. $150{\sim}250^{\circ}C$의 온도 범위에서 $Al_2O_3-TiO_2$ 흡착제의 $Co^{2+}$ 흡착반응에 대한 표준 엔탈피 변화값은 $TiO_2$ 함량이 26mol%, 43mol%, 80mol%에 대하여 $16.5{\sim}26.0kJ{\cdot}mol^{-1}$범위에 있었으며, 이 흡착반응이 비가역적인 흡열반응임을 알 수 있었다. $250^{\circ}C$의 고온수에서 하소 온도가 $600^{\circ}C$, $TiO_2$함량이 26mol%인 흡착제의 코발트 평형흡착용량은 $0.1674meq{\cdot}g^{-1}$이었다.

• 전기학회논문지
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• 제58권2호
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• pp.327-331
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• 2009

Nano-porous $TiO_2$ powder was fabricated using Acetylene black, applied photo voltaic device based on the Dye-sensitized Solar Cells (DSCs) was investigated experimentally. $TiO_2$-powder was fabricated using Ti-isopropoxide and 2-propanol by sol-gel combustion method. For cases of variable Acetylene black, characteristic of porosity, size of particle and crystallite of obtained $TiO_2$ nano-powder was investigated. The photovoltaic efficiency of the prepared DSCs was measured using $TiO_2$ film which prepared on each different heat treatment temperature($400^{\circ}C{\sim}700^{\circ}C$) with paste of $TiO_2$ powder. The porosity and size of particle of $TiO_2$ powder made with Acetylene black 0.4g was influenced significantly effect to DSCs characteristic. Heat treatment at $500^{\circ}C$ makes the better photovoltaic efficiency which 5.02%($J_{sc}=11.79mA/cm^2$, $V_{oc}=0.73V$, ff=0.58). The sol-gel combustion method was useful to DSCs fabrication.

• 한국세라믹학회지
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• 제53권4호
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• pp.393-399
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• 2016

We have successfully fabricated 3D (3-dimensional) nanostructures of $TiO_2$ coated with a $g-C_3N_4$ layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of $TiO_2$ and $g-C_3N_4$, the nanostructures exhibited good performance as the higher conduction band of $g-C_3N_4$, which can be combined with $TiO_2$. To fabricate 3D nanostructures of $g-C_3N_4/TiO_2$, $TiO_2$ was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at $150^{\circ}C$ for 3 h. After this, the $g-C_3N_4$ layer was coated on the $TiO_2$ film at $520^{\circ}C$ for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of $g-C_3N_4/TiO_2$ film was found to exhibit the highest current density of $0.12mA/cm^2$, along with a long-term stability of 5 h. Compared to the pristine $TiO_2$, and to the 0.25 g, 0.75 g, and 1 g $g-C_3N_4/TiO_2$ films, the 0.5 g of $g-C_3N_4/TiO_2$ sample was coated with a thin $g-C_3N_4$ layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2531-2536
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• 2011

Ethanol is a prototype molecule used in probing catalytic reactivity of oxide catalysts such as $TiO_2$. In the present study, we adsorbed ethanol on $TiO_2$(001) at room temperature (RT) and the corresponding bonding state of ethanol was systematically studied by x-ray photoemission spectroscopy (XPS) using synchrotron radiation. Especially, we compared $TiO_2$(001) surfaces prepared in ultra-high vacuum (UHV) with different surface treatments such as $Ar^+$-sputtering and oxidation with molecular $O_2$, respectively. We find that the saturation coverage of ethanol at RT varies depending on the amount of reduced surface defects (e.g., $Ti^{3+}$) which are introduced by $Ar^+$-sputtering. We also find that the oxidized $TiO_2$(001) surface has other type of surface defects (not related to Ti 3d state) which can dissociate ethanol for further reaction above 600 K. Our C 1s core level spectra indicate clearly resolved features for the two chemically distinct carbon atoms from ethanol adsorbed on $TiO_2$(001), showing the adsorption of ethanol proceeds without C-C bond dissociation. No other C 1s feature for a possible oxidized intermediate was observed up to the substrate temperature of 650 K.

• ETRI Journal
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• 제13권4호
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• pp.58-69
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• 1991

고집적회로에서 A1 금속공정의 diffusion barrier로 널리 사용되는 titanium nitride의 성질을 조사하였다. 실제 회로 구조의 열적 안정성을 관찰하기 위하여 준비된 TiN/Ti다층 barrier를 $600^{\circ}C$까지 열처리하여 x-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy(XTEM) 등으로 분석하였다. 열처리 온도가 증가됨에 따라 oxygen은 TiN 층의 표면과 pure-Ti 층에 pile up 된다. TiN 층의 표면에서는 $600^{\circ}C$열처리시 TiN이 분해되어 완전히 $TiO_2$가 형성되며, TiN 층 내에서는 oxygen 함량은 열처리 온도의 증가에 따라 커지고 이때 형성되는 Ti-oxide는 $TiO_2$ 보다 TiO, $Ti_2$$O_3$ 상태로 존재하게 된다. Pure-Ti 층은 열처리시 두개의 층으로 나누어 지는 데, 표면에서 침투하는 oxygen과 pure-Ti이 반응하여 Ti-oxide 층이 생기며 실리콘 기판과의 반응으로 Ti-silicide를 형성한다. $600^{\circ}C$에서 모든 Ti 층이 반응으로 소모되고 열적 stress, Ti-silicide의 grain growth, oxygen의 침입으로 TiN 층에 blistering이 발생한다.

• 한국환경과학회지
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• 제12권12호
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• pp.1277-1284
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• 2003

The photocatalytic oxidation of Rhodamine B (RhB) was studied using immobilized TiO$_2$ and fluidized bed reactor. Immobilized TiO$_2$ onto GF/C was employed as the photocatalyst and a 30 W germicidal lamp was used as the light source and the reactor volume was 4.8 L. The effects of parameters such as the amounts of photocatalyst, initial concentration, initial pH, air flow rate and anion additives (NO$_3$$\^$-/, SO$_4$$\^$2-/, Cl$\^$-/, CO$_3$$\^$2-/) competing for reaction. The results showed that the optimum dosage of the immobilized TiO$_2$ was 40.0 g/L. Initial removal rate of immobilized TiO$_2$ was expressed Langmuir - Hinshelwood equation.

• 대한금속재료학회지
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• 제50권9호
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• pp.677-684
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• 2012

A feasible way to fabricate in-situ Al/TiC composites was investigated. An elemental mixture of $Al-TiO_2-C$ pellet was directly added into an Al melt at $800-920^{\circ}C$ to form TiC by self-combustion reaction. The addition of CuO initiates the self-combustion reaction to form TiC in $1-2{\mu}m$ at the melt temperature above $850^{\circ}C$. Besides the CuO addition, a diluent element of excess Al plays a significant role in the TiC formation by forming a precursor phase, $Al_3Ti$. Processing parameters such as CuO content, the amount of excess Al and the melt temperature, have affected the combustion reaction and formation of TiC, and their influences on the microstructures of in-situ Al/TiC composites are examined.

• 전기학회논문지
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• 제67권4호
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• 한국재료학회지
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• 제12권11호
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.