• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.232-235
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• 1999

In this paper, We described the effect of $MoO_3$ Addition and firing temperature on the microwave dielectric properties of $BiNb0_4$ ceramics. The specimens prepared by conventional mixed method was addicted by 0 - 0.03 wt% $MoO_3$ and fired at 860 - $950^{\circ}$ for 3hr. Density increased when $MoO_3$ is below O.Olwt% but decreased when over O.Olwt%. $BiNb0_4$ ceramics addicted with CuO 0.03wt % and $MoO_3$ 0.01 wt% showed microwave dielectric properties, Dielectric constant 37.5, Quality factor[Qx$f_0$]5500, Temperature coefficient of resonance frequency 15ppm/$^{\circ}$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.995-999
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• 2007

The lead zirconate titanate (PZT) powders were synthesized to make the piezoelectric ceramics in low temperature as low as $900^{\circ}C$. To investigate the influence of additives on sintering of PZT, two kinds of sintering aids were made as follows; $wB_2O_3-xBi_2O_3-zCuO$and LiBiO2-CuO. The sintering aid, $1{\sim}3$ wt.% $LiBiO_2-CuO$, was added into these PZT powders and the specimens were fired at temperature in the range of $800{\sim}1200^{\circ}C$. The highest density was shown in the specimen with 1 wt.% $LiBiO_2-CuO$ as additive at temperature of $900^{\circ}C$. The sintered specimen were analyzed by X-ray diffraction(XRD) and scanning electron microscopy (SEM) was utilized to observe the microstructure, especially the densified morphology of specimens. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. The scanning electron microscopy(SEM) was utilized to observe the structure of specimens after firing at $900^{\circ}C$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. The high sinterability of PZT ceramics was attributed to the low formation temperature of the liquid phase of additives.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.771-775
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• 2007

In this study, in order to develop low temperature sintering ceramics for thickness vibration mode multilayer piezoelectric transformer, $PbTiO_3$ system ceramics were fabricated using $Na_2CO_3,\;Li_2CO_3,\;MnO_2\;and\;Bi_2O_3$ as sintering aids and their dielectric and piezoeletric properties were investigated according to the amount of $Bi_2O_3$ addition. At the sintering temperature of $900^{\circ}C\;and\;Bi_2O_3$ addition of 0.1 wt%, density, grain size, thickness vibration mode eletromechanical coupling factor($k_t$), thickness vibration mode mechanical quality factor($Q_{mt}$) and dielecteic constant(${\varepsilon}_r$) showed the optimum value of $6.94g/cm^3,\;2.413{\mu}m$, 0.497, 3,162 and 209, respectively, for thickness vibration mode multilayer piezoelectric transformer application.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1095-1098
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• 2004

In this study, $Bi_2O_3-B_2O_3-ZnO$ glass system, which was expected to have similar properties with PbO containing glass system, was selected as a PbO replaceable potential composition because the atomic weight and ionic radius of Bi is similar to those of Pb. Glasses with different modifier/former ratio were prepared by melting the raw ingredient mixtures in $Bi_2O_3-B_2O_3-ZnO$ system, and the thermal and electrical properties of the sintered samples were examined. The glass transition temperatures and the dielectric constant of the glass pellets were between 350 $^{\circ}C{\sim}$500 $^{\circ}C$ and 15-35, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.94.1-94.1
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• 2007

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.51-53
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• 1999

The crystallization mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied from the relations between crystallization and volume changes by dilatometry. Further, the effect of addition of CdO on the crystallization mechanism and superconductivity was discussed. The shrinkage of the amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ occurred with the crystallization of $Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase decrease with increasing CdO content with a minimum at x=0.4. Better superconductivity was obtained in the specimens formation less amount of the$Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase during the crystallization process.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1110-1114
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• 1998

The crystallization behaviors and electrical conductivities of the glasses heat-treated at various times and temperatures in the CuO-Bi$_2$O$_3$-V$_2$O$_{5}$ glass system were investigated. Among glass samples with various compositions, the highest conductivity obtained in the 31CuO-14Bi$_2$O$_3$-55V$_2$O$_{5}$ (mol%) glass sample. The 31CuO-14Bi$_2$O$_3$-55V$_2$O$_{5}$ (mol%) glass sample crystallized by heat treatment at 358$^{\circ}C$ for 8h had 2.67$\times$10$^{-2}$ $\Omega$$^{-1}$ $cm^{-1}$ /, which was much high value as a solid electrolyte. Compared to the glass sample, the heat- treated glass sample was increased in conductivity by an order of 10$^3$-10$^4$due to the formation and growth of BiVO$_4$ and CuVO$_3$crystals.