• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.111-115
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• 2003

200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.5-12
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• 2000

열전퇴의 고온 접합부가 Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/ 멤브레인에 의해 실리콘 기판으로부터 열차단되고, 열전퇴의 저온 접합부는 방열판 역할을 하는 실리콘 림(rim)에 의해 지지되는 멤브레인위에 놓여지며, Au-black이 적외선 흡수체로 사용되는 비냉각 금속 박막형 열전퇴 적외선 검지기를 제작하고, 적외선 검지기의 성능지수에 대해 논의하였다. 3∼14㎛의 파장범위에서 Au-black의 적외선 흡수도는 대개 90%정도였고, Au 증발시의 챔버압력 및 증착된 Au-black의 단위면적당 질량에 크게 의존하였다. 쵸핑 주파수가 5 Hz일 때 Bi-Sb 열전퇴 적외선 검지기의 전압 감응도, 잡음등가전력 및 비검지도는 실온의 공기중에서 각각 약 10.5V/W, 2.3 ㎻/㎐½, 및 1.9×10/sup 7/㎝·㎐½/w였다.

• Nuclear Engineering and Technology
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• 제54권12호
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• pp.4708-4714
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• 2022

The novelty in the present search, the Soda-Lime-Silica (SLS) glass waste to prepare free lead glass shielding was used in order to limit the accumulation of glass waste, which requires extensive time to decompose. This also saves on the consumption of pure SiO₂, which is a finite resource. Furthermore, the combining of BaO with Bi₂O₃ into a glass network leads to increased optical properties and improved attenuation. The UV-Visible Spectrophotometer was used to investigate the optical properties and the radiation shielding properties were reported for current glass samples utilizing the PhysX/PDS online software. The optical property results indicate that when BaO content increases in glass structure, the Urbach energy ΔE, and refractive index n increases while the energy optical band gap E_opt decreases. The result of the metallisation criteria (M) revealed that the present glass samples are nonmetallic (insulators). Furthermore, the radiation shielding parameter findings suggest that when BaO was increased in the glass structure, the linear attenuation coefficient and effective atomic number (Z_eff) rose. But the half-value layer HVL declined as the BaO concentration grew. According to the research, the glass samples are non-toxic, transparent to visible light, and efficient radiation shielding materials. The Ba5 sample is considered the best among all the samples due to its higher attenuation value and lower HVL and MFP values, which make it a suitable candidate as transparent glass shield shielding.

• 한국분말재료학회지
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• 제13권3호
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• pp.217-222
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• 2006

The relationship between electrical properties of superconductor and externally applied magnetic field was studied to develop a magnetic field sensor. The electrical resistance of the superconductor was increased by applying external magnetic field and even after removal of the magnetic field. This behavior was related to the magnetic flux trapped in the superconductor, which penetrated through the material by the external magnetic field. Some portion of the superconductor was changed to a normal state by the trapped magnetic flux. The appearance of the normal state yielded to enhance the electrical resistance.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.600-604
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• 1996

High-T$_{c}$, superconducting wire is very important element for the application of electrical power systems. But it is very difficult to develope the long high T, wire with excellent properties. BiSrCaCuO multi-layer tapes are fabricated by a rolling method and pressing method sintered for several step at 840.deg. C. The critical current densities of 637 filament multi-layer tapes sintering 100 hours fabricated by the rolling method and pressing method are 1.3*10$^{4}$ A/cm$^{2}$ and 5.5*10$^{3}$ A/cm$^{2}$. The critical cur-rent densites of multi-layer tapes made by rolling method are found to be better than those fabricated by the powder-in-tube method and pressing process. As result, the rolling method is the best way to fabricated the multi-layer filament.t.

• Journal of Chest Surgery
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• 제26권11호
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• pp.874-880
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• 1993

A personal computer, IBM compatible 386, was utilized to analyse total series of 1867 cases of cardiovascular operations including 1060 cases of open cardiac surgeries performed at the Cardiac Center of Paik Hospital from 1986 to 1992.All data were first assembled from the operation files and the operation records from the patient charts. Code numbers were placed to the diagnosis, the operations and the diseases.The analysis revealed the distributions of 1867 cases of operations;819 cases[77%] of the congenital heart diseases and 207 cases[20%] of the acquired heart diseases among 1060 open heart operations. The operative mortalities were 3.7% for the congenital heart diseases and 6.3% for the acquired heart diseases.The vascular operations showed the operative mortalities of 11.8% for the aortic surgery under extracorporeal circulation and 0.7% for the other vascular surgery.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.107-108
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• 2006

In this work, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric film was fabricated by the sol-gel method. However, there have been serious problems in CMP in terms of repeatability and defects in patterned wafer. Especially, dishing & erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the lifetime of the semiconductor. Cross-sections of the wafer before and after CMP were examined by Scanning electron microscope(SEM). Process characteristics of non-dishing and erosion were investigated.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.165-166
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• 2016