• 한국자기학회지
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• 제16권5호
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• pp.245-248
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• 2006

Sol-gel법을 이용하여 단일상을 갖는 $Tb_{3-x}Bi_xFe_5O_{12}$ 분말 시료를 제조하였으며, 그 결정학적 및 자기적 특성을 x-선 회절법(XRD), 진동 시료 자화율 측정법(VSM), $M\"{o}ssbauer$ 분광법으로 연구하였다. XRD 분석 결과 결정구조는 Ia3d의 공간그룹을 갖는 cubic 구조임을 알 수 있었고, Bismuth의 치환량이 x=0.5, 0.75, 1.0 및 1.25로 증가할수록 격자상수가 각각 $a_0=12.466{\AA},\;12.487{\AA},\;12.499{\AA},\;12.518{\AA}$으로 선형적으로 증가함을 확인할 수 있었다. VSM을 이용한 온도에 따른 자기모멘트 측정 결과 Bismuth의 치환량이 증가하면 $N\'{e}el$ 온도는 증가하며 compensation 온도는 감소함을 확인할 수 있었다. 또한 field cooled 조건에서 비정상적인 음의 자화값이 관측되었다. $M\"{o}ssbauer$ 스펙트럼은 4.2 K에서부터 $N\'{e}el$ 온도까지 측정하였으며, 분석 결과 상온에서 모든 시료의 이성질체 이동치의 값은 평균적으로 0.27mm/s로 철의 이온상태가 +3가 임을 확인할 수 있었다.

• 한국세라믹학회지
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• 제34권10호
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• pp.1074-1082
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• 1997

Microstructure and permeability as a function of sintering temperature and composition were studied on the Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0, 0.1, 0.2, 0.3, 0.4) which was prepared by Cu2+ substitution for Ni2+ in Ni.0.4Zn0.6Fe2O4, then followed by 8 wt% CuO and 1wt% Bi2O3 as sintering aids. It was found that NiCuZn ferrite in which Cu2+ is substituted for Ni2+ is more effective in reduction of sintering temperature than Ni.0.4Zn0.6Fe2O4, containing CuO as a sintering aid. The specimen $\delta$=0.2 sintered at 90$0^{\circ}C$ for 2hr exhibited the highest initial permeability value ($\mu$o=280 at 1Mhz), but the real permeability decreased at the frequency under 10 MHz. EPMA analysis showed that Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0.4), sintered at 95$0^{\circ}C$ for 2hrs consisted of three phase regions of Ni.0.3Cu0.1Zn0.6Fe2O4 region, Cu and Bi liquid existed at the 3-point boundary, although the stabilization energy of Ni2+ is higher than that of Cu2+ in B site.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.341-342
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_3O_{12}$ (BGT), thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si substrates by a sol-gel method and their structural and ferroelectric properties have been characterized. Fabricated BGT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The remanent polarization ($2P_r$)) of BGT thin film annealed at $720^{\circ}C$ was $25.85\;{\mu}C/cm^2$ at an applied voltage of 5 V. The BGT thin films exhibited a 11 % reduction in their switching charge after no less than $10^{11}$ switching cycles at a frequency of 1 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.92-95
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• 2003

전력선 통신용 LC 공진필터에 사용되는 Ni-Zn 페라이트를 제조하기 위해 $Ni_{0.8}Zn_{0.2}Fe_{2}O_{4}$를 기본조성으로 첨가제 $Bi_{2}O_{3}$, CaO와 x (co mol 비)를 변화시켜 전자기적 특성을 조사하였다. $Bi_{2}O_{3}$ CaO가 첨가됨으로써 균일한 입자성장과 입계에 고저항층이 형성되어 주파수 손실이 감소하였으며, $Ni_{0.8-x}Zn_{0.2}Co_{x}Fe_{2}O_{\delta}$의 기본조성에 Co의 함량을 증가시키면 x = 0.05에서 투자율 75, 공진주파수 20MHz의 특성을 나타내고 결정 입자 크기와 같은 구조적 특성에는 영향을 거의 미치지 않지만 전자기적 특성에는 영향을 미친다. 또한, $Ni_{0.75}Zn_{0.2}Co_{0.05}Fe_{2}O_{4.017}$ 조성의 페라이트 코어의 발열량은 큐리온도 이하에서 일어난다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.88-88
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• 2009

$BiFeO_3$(BFO), when forming a solid solution with $BaTiO_3$(BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.7BFO-0.3BTO thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $600^{\circ}C$ and an oxygen partial pressure of 10mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with. the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron. microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 한국세라믹학회지
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• 제47권1호
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Current Applied Physics
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• 제18권12호
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• pp.1473-1479
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• 2018

Recently multiferroic materials have attract great interest for the applications on memorial, spintronic and magneto-electric sensor devices for their spontaneous magneto-electric coupling properties. Research and development of the various kinds of multiferroics are indispensable factor for a new generation multifunctional materials. In this research, mechanical, electronic, magnetic and nonlinear optical properties of La modified $BiLaFe_2O_6$ (BLFO) and Mn modified $Bi_2FeMnO_6$ (BFMO) were studied as new members of multiferroic $BiFeO_3$ (BFO) series by first-principles calculations, and compared with the pure BFO to discover the optimized properties. Our results show that BLFO and BFMO have good mechanical stability as revealed by elastic constants that satisfy the stability criteria. All these compounds exhibit anisotropic and ductile nature. The enhanced properties by La and Mn substitution, such as increased hardness, improved magnetism, decreased band gap and comparable second harmonic generation responses reveal that the new multiferroic members of BLFO and BFMO would get wider application than their BFO counterpart. Our study is expected to providing an appropriate mechanical reference data as guidance for engineering of high efficiency multifunctional devices with the BFO series.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.