• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.849-853
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• 1999

In the study, superconducting properties of $Bi_2$-x(sub)$LSr_2$Ca(sub)1+x(sub)$LCu_2$O(sub)8+d (x(sub)L=0, 0.05, 0.1, 0.2) films prepared by the LPE method was investigated. The peak decompositions of Sr3d and Ca2p XPS spectra, together with the EPMA results, elucidated the occupancies of Bi, Sr and Ca atoms on the SrO- and Ca-layers. The lattice parameter c monotonically increased with increasing x(sub)L for $0\leq$x(sub)L$\leq$0.2. The superconducting critical temperature T(sub)c showed a maximum value around x(sub)L=0.1. The x(sub)L dependence of the superconducting critical temperature T(sub)c and the lattice parameter c are explained by the changes of the excess oxygens in the BiO-layer. Since distribution and deficiency of the atoms in SrO-layer have influenced on superconducting properties and crystal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.277-278
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• 2007

In this study, in order to develop multilayer piezo-actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3,\;Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution. Bi substitution enhanced electromechanical coupling factor$(k_p)$ and dielectric constant$({\varepsilon}_r)$. However, mechanical quality factor was deteriorated. At the sintering temperature of $870^{\circ}C$ and Bi substitution of 1mol%, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, Dielectric constant$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $7.878g/cm^3$, 0.608, 835, 1603 and 397pC/N, respectively.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.547-551
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• 1999

The phase change upon Bi substitutions in $Ca_{1.5-1.5x}Bi_xVO_4$ has been systematically studied. The x value corresponding to the maximum Bi substitutions reades to 0.14 and in this range($x{\leq}0.14$), the single phasic $Ca_3(VO_4)_2$ can be identified. However, a new phase of $BiV_{1.025}O_{4+x}$ is apparently formed along with the $Ca_3(VO_4)_2$ phase, when the x value exceeds beyond 0.18 ($x{\geq}0.18$). As a result of Bi substitution in the range of x$\leq$0.14, the interplanar space($d_300$) becomes larger as the Bi content increases. Since the composition of single phasic $Ca_{1.29}Bi_{0.14}VO_4$ (x=O.14) is, however, incongruent melting one, no definite melting point could be observed. But we found that its solidus temperature was 1182$^{\circ}C$ by DTA analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1007-1013
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• 1998

The samples of Bi2Sr2Ca1-xNaxCu2O8+y with various carrier concentration were synthesized by substituting Na for Ca ion. The superconducting properties hall coefficients and X-ray powder diffraction were measur-ed the sampled. Single phase samples were obtained for 0$\leq$x<0.3 of Bi2Sr2Ca1-xNaxCu2O8+y In the single phase the critical temperature. {{{{ { T}_{c } }} and carrier concentration increase with the increase of Na concentration pass through a maximum and then decreases. In the range of x$\geq$0.7 to the Na doped samples however we observed the metal-semiconductor transition. The c-axis seemed to decrease and a and b-axes increase with increasing Na concentration in the single phase. Decreasing of c-axis while increasing x is due to the smaller size of {{{{ {Na}^{+1 } }} ions to the {{{{ { Ca}^{+2 } }} ions. In the range of x>0.3 however the trend becomes ambiguous due to the inclusion of the 10K phase and impurity phase.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.36-40
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• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.182.2-182
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• 2003

• Bulletin of the Korean Chemical Society
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• v.11 no.1
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• pp.25-28
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• 1990

The superconducting properties have been studied for high-Tc superconductors of the $Bi_{2-x}Mo_xSr_2Ca_2Cu_3O_y$ system (x = 0.03-0.30). The crystal structure is pseudo tetragonal with the average lattice parameters a = 5.38 ${\AA}$, b = 5.44 ${\AA}$ and c = 30.6 ${\AA}$. All samples exhibit superconductivity with Tc offset at 79 K and Tc onset at 90-115 K. The Tc onset point decreases with increasing x, but the Tc offset points are nearly the same for all samples. Scanning electron micrographs show a special growth behavior of the grains with a plate shape. It is suggested that the decrease in Tc onset points with substitution of Mo for Bi is due to the decrease in lattice parameters and to the p-orbital of Mo. It is concluded that Mo does not play a crucial role in the superconducting transition of the $Bi_2Sr_2Ca_2Cu_3O_y$ system.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.150-154
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• 2005

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.