• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.245-248
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• 2006

[ $Tb_{3-x}Bi_xFe_5O_{12}$ ] has been studied by x-ray diffraction (XRD), vibrating sample magnetometer, $M\"{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The lattice constants increase linearly with increasing bismuth concentration. With increase of bismuth substitution, the $N\'{e}el$ temperature increases but the compensation temperature decreases. We have observed the negative magnetization in Bi-TbIG system which has not been reported in garnet systems. $M\"{o}ssbauer$ spectra were measured at various temperatures from 4.2 K to $N\'{e}el$ temperature. The isomer shifts at room temperature are ${\sim}0.26mm/s$ which is consistent with ferric state.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.182.2-182
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• 2003

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.710-715
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• 2001

반응소결공정(RSP : Reaction Sintering Process)을 이용하여 YF댸₃와 Fe₂O₃의 성분에 소결첨가재 Bi₂O₃를 첨가하여 YIG를 합성하였다. Bi₂O₃첨가량과 소결온도에 따른 YIG 소결체의 미세구조 및 자기적 특성변화에 대해 주사전자현미경, X-선 회절분석기 및 시료 진동형 자력계를 이용하여 조사하였다. 소량의 소결첨가재 Bi₂O₃첨가시 YIG 소결체의 격자상수는 12.387에서 12.420 Å으로 증가하였다. 이는 상대적으로 이온반경이 큰 Bi 이온이 12면체 Y 이온 자리로 치환되었기 때문인 것으로 여겨진다. Bi₂O₃를 1.0 wt% 첨가하였을 때 비교적 균질한 미세구조를 보였으며, 1350℃에서 소결한 YIG의 밀도가 이론밀도의 98% 이상의 치밀화를 보였다. Bi₂O₃가 0.0 wt%에서 1.5 wt%로 첨가량이 증가함에 따라 상온에서의 포화자화값(M/sub s/)은 조금씩 증가하는 경향을 보였으나 큰 변화는 없었다. 반응소결공정을 이용 YIG 소결시 소결첨가제 Bi₂O₃가 1.0 wt%이고, 소결온도 1350℃에서 비교적 우수한 소결특성과 자기특성을 가지는 YIG 소결체를 얻을 수 있었다.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.787-791
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• 2000

Samples with the nominal composition, Bi2-xGexSr2CaCu2O8＋$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.987-993
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• 2003

We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.193-198
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• 2004

Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.434-439
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• 1997

It this paper, the piezoelectric and electro-induced strain properties of (P $b_{1-}$2x/3/B $i_{x}$ )[N $i_{1}$3/N $b_{2}$3/)$_{0.4}$( $Ti_{0.6}$Z $r_{0.4}$)$_{0.6}$] $O_3$ceramics (x=0, 0.005, 0.02) were investigated with the substitution of B $i^{3+}$, and the feasibility of the application for bimorph actuator was evaluated by measuring the dynamic properties of the piezoelectric bimorph fabricated with above ceramics. Dielectric constant was enhanced with the increase of B $i^{3+}$ substitution, and appeared the maximum value of 5032 at x=0.01 composition. Increasing the substitution of B $i^{3+}$, the electromechanical coefficient( $k_{p}$ , $k_{31}$ ) was increased up to the substitution of 0.5 mol% B $i^{3+}$, showed the value of 0.656, 0.439, respectively. The piezoelectric constant( $d_{33}$ $d_{31}$ ) had the highest value of 344, 825 with the substitution of 0.5 mol% B $i^{3+}$. The strain, generated by 60 Hz AC electric field, had the largest value of 1200($\times$10$^{-6}$ $\Delta$1/1) in the composition with the substitution of 0.5 mol% B $i^{3+}$. The dynamic properties of the bimorph actuator, fabricated with the composition substitution of 0.5 mol% B $i^{3+}$, showed the largest value of 325 $\mu$m at $\pm$150 V square pulse. square pulse.are pulse..

• Electrical & Electronic Materials
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• v.3 no.2
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• pp.90-98
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• 1990

Y-Bi-Ba-Cu-O계 초전도체를 보통의 ceramic방법과 screen printing과 소결법으로 원판형과 후막형으로 제작하였다. B $i_{2}$ $O_{3}$를 첨가하여 소결한 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 초전도 성질은 전기저항측정과 자석위에 부상 유무로 조사하였다. 또한 B $i_{2}$ $O_{3}$를 첨가함에 따라 소결된 시편의 미세구조에 어떠한 영향을 주었는지 알아보았다. 전기저항 측정시 Yttrium 대신에 Bi로 부분적으로 치환한 경우인 $Y_{0.85}$B $i_{0.15}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 상온 저항치가 기본조성인 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 그것보다 향상된 미세구조로 인해 더 작은 값을 나타낸다. 반면 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$에다가 초과로 B $i_{2}$ $O_{3}$를 첨가한 경우 오히려 미세구조는 불량하고 상온저항치도 더 높다. 이러한 사실은 입계에 잔류하는 이차상은 전기적 성질에는 크게 영향을 주나 자기적 성질에는 거의 영향을 주지않는 것으로 보인다. 후막으로 Y-Bi-Ba-Cu-O를 제작시 기판에 의해 좌우되는데 단지 magnesia 기판에서 소결시 bulk시편과 유사한 성질을 나타냈다.질을 나타냈다.다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.826-834
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• 2004

In this paper, we fabricated thick film monopole antennas using Bi$_2$O$_3$-doped BaTi$_4$$O_{9}$ ceramics for small size and broadband intenna. In the result, the high permittivity was fixed and the quality factor was also significantly decreased by the formation of secondary phase of Bi$_4$Ti$_3$O$_{12}$ repleced by addtion Bi. The antenna property influenced by the quality value more than the permittivity. The bandwidth of antenna was increased to 33 %. On the other hand, the gain was reduced to -4.3 dBi. Also radiation patterns were showed low dBi value by increasing of dielectric loss. Specially, Measured x-y plane radiation patterns was distorted as the dispersion of wavelength and high permittivity difference. But the result is showed execellent bandwidth because of low quality value in all formation range.nge.