• Title/Summary/Keyword: $Bi_2$$O_3$

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$Bi_2O_3$첨가에 따른 $Li_2O-P_2O_5-V_2O_5$ 결정화유리의 전기화학적 특성변화 (Electrochemical properties of $Li_2O-P_2O_5-V_2O_5$ Glass-ceramics by Addition of $Bi_2O_3$)

  • 손명모;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.797-800
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    • 2002
  • Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

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Sb/Bi비가 ZnO-Bi2O3-Sb2O3-NiO-Cr2O3 바리스터의 소결과 입계 특성에 미치는 영향 (Effect of Sb/Bi Ratio on Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-NiO-Cr2O3 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국재료학회지
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    • 제22권12호
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    • pp.689-695
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    • 2012
  • We have examined the co-doping effects of 1/2 mol% NiO and 1/4 mol% $Cr_2O_3$ (Ni:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Ni,Cr-doped ZBS, ZBS(NiCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were detected for all of compositions. For the sample with Sb/Bi = 1.0, the Pyrochlore was decomposed and promoted densification at lower temperature by Ni rather than by Cr. A homogeneous microstructure was obtained for all of the samples affected by ${\alpha}$-spinel. The varistor characteristics were not dramatically improved (non-linear coefficient, ${\alpha}$ = 5~24), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.17 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to have been divided into two types, i.e., one is tentatively assigned to ZnO/$Bi_2O_3$ (Ni,Cr)/ZnO (0.98 eV) and the other is assigned to a ZnO/ZnO (~1.5 eV) homojunction.

Sb/Bi비가 ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 바리스터의 소결과 입계 특성에 미치는 영향 (Effect of Sb/Bi Ratio on Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.878-885
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    • 2012
  • In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

Chip inductor용 Co2Z type Ba-ferrite의 저온소결에 관한 연구 (Study on Low-Temperature sintering of Co2Z type Ba ferrites for chip inductor)

  • 조균우;한영호;문병철
    • 한국자기학회지
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    • 제12권5호
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    • pp.195-200
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    • 2002
  • 각종 산화물을 첨가하여 Co$_2$Z type Ba-ferrite의 저온소결에 관하여 연구하였다. Co$_2$Z type Ba-ferrite 상은 2회 하소과정을 통하여 얻을 수 있었으며, 생성된 상의 XRD peaks는 일부 minor peaks 제외하고는 standard peaks와 거의 일치하였다 제조된 분말은 저온소결을 위하여 ZnO-B$_2$O$_3$ glass리 단독 첨가 및 CuO 또는 Bi$_2$O$_3$와 복합 첨가하였으며, 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가하였다. 소결은 900~100$0^{\circ}C$에서 수행하였다. ZnO-B$_2$O$_3$ glass의 단독 첨가 시, 첨가량이 7.5 wt%일 때 가장 높은 수축거동을 나타내었다. ZnO-Bi$_2$O$_3$ glass와 CuO 또는 Bi$_2$O$_3$를 복합 첨가하였을 때, glass를 단독 첨가하였을 경우보다 수축률이 급격히 증가되었다. 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가한 시편의 수축률과 초기 투자율은 ZnO-B$_2$O$_3$ glass를 단독 첨가한 시편보다 높은 값을 나타내었다.

Preparation and Electrical Conductivity of CuO-Bi2O3-V2O5 Glass for Solid State Batteries

  • Jeong, Dong-Jin;Park, Hee-Chan;Lee, Heun-Soo;Park, Chan-Young
    • The Korean Journal of Ceramics
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    • 제5권2호
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    • pp.183-188
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    • 1999
  • The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

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박리화와 재적층법을 통한 K2La2Ti3O10부터 유전성 Bi4-xLaxTi3O12(x~2)의 합성 (Preparation of dielectric Bi4-xLaxTi3O12 (x~2) from K2La2Ti3O10 via exfoliation and restacking routes)

  • 전아영;고지은;김종영
    • 한국결정성장학회지
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    • 제23권1호
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    • pp.14-19
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    • 2013
  • 본 연구팀에서는 층상형 페로브스카이트 구조를 갖는 Ruddlesden-Popper 구조의 $K_2La_2Ti_3O_{10}$의 박리화를 통해 Aurivillius 구조의 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 페로브스카이트 산화물을 성공적으로 합성하였다. 박리화된 란타늄 티타네이트 나노시트는 BiOCl 나노결정구조와 반응시켜 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 결정을 얻어내었다. 박리화된 나노시트 현탁액은 $K_2La_2Ti_3O_{10}$으로부터 수소화된 $H_2La_2Ti_3O_{10}$의 층간에 에틸아민을 삽입시킴으로써 얻어내었다. 투과전자현미경(TEM) 분석을 통해, 란타늄 티타네이트가 에틸아민에 의해 박리화된 것을 확인할 수 있었다. X-선 회절분석(XRD)을 통해, 박리화된 란타늄 티타네이트와 BiOCl의 재적층과정을 거쳐 $700^{\circ}C$ 이상의 열처리 조건에서 $Bi_{4-x}La_xTi_3O_{12}$(x~2)로 형성된 것을 확인할 수 있었다.

Visible-light Photocatalytic Activity of BiOCl/Bi3O4Cl Nanocomposites

  • Gao, Bifen;Chakraborty, Ashok Kumar;Yang, Ji-Min;Lee, Wan-In
    • Bulletin of the Korean Chemical Society
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    • 제31권7호
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    • pp.1941-1944
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    • 2010
  • The heterojunction structures of BiOCl/$Bi_3O_4Cl$, exhibiting considerable visible-light photocatalytic efficiency, were prepared by a simple wet-chemical process at ambient condition. The prepared nanocomposites were characterized by XRD, TEM, and UV-visible diffuse reflectance spectra. Under visible light (${\lambda}\geq$420 nm) irradiation, BiOCl/$Bi_3O_4Cl$ exhibited an enhanced photocatalytic activity in decomposing 2-propanol (IP) in gas phase and salicylic acid (SA) in aqueous solution, whereas the bare BiOCl and $Bi_3O_4Cl$ showed negligible activities. It is deduced that the remarkable visible-light photocatalytic activity of the BiOCl/$Bi_3O_4Cl$ originates from the hole $(h^+)$ transfer between VB of the $Bi_3O_4Cl$ and BiOCl semiconductors.

비정질 Spinel Ferrite의 제조와 그 자기적 특성 (Preparation and Magnetic Properties of Amorphous Spinel Ferrite)

  • 김태옥;김창곤
    • 한국자기학회지
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    • 제2권1호
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    • pp.29-36
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    • 1992
  • 본 연구에서는 장래의 전자공업 및 정보산업의 기본소재로서 그 응용이 기대되고 있는비정질 산화물자성체를 개발하기 위한 기초연구를 수행하였다. 현재 연구보고 되어 있는 강자성비정질 산화물은 같은 조성의 다결정 ferrite에 비하여 그 자성이 빈약하므로 자성이 좀더 강한비정질 spinel ferrite의 개발이 요구된다. 자체 제작한 쌍 roller 초급내장치로써 $CaO-B_{2}O_{3}$ 계 amorphous ferrite 시료를 제조하고 얻어진 시편의 제특성을 조사하기 위해 XRD, DTA/TG, VSM, $M\"{o}ssbauer$ spectrum으로 측정한 결과 다음과 같은 결론을 얻었다. $CaO-Bi_{2}O_{3}$ 계 amorphous ferrite는 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$. 40-70 mole% $Fe_{2}O_{3}$의 조성 영역에서 제조가 가능하고 $BiFeO_{3}$$CaFe_{4}O_{7}$의 혼합 조성부근에서 강력한 자화를 나타낸다. 특히 ${(CaO)}_{20}-{(Bi_{2}O_{3})}_{15}{(Fe_{2}O_{3}}_{65}$의 조성에 있어서는 자화가 약 21.84 emu/g(10 kOe)이며 강 자성적인 거동을 나타낸다. 이 비정질 ferrite는 반강자성상($\alpha$-상)과 강자성상($\beta$-상)으로 되어 있다. 비정질 ferrite의 결정화는 $550^{\circ}C$$775^{\circ}C$에서 2단계로 일어나고, 그때 나타나는 결정상은 $BiFeO_{3}$의 perovskite 상과 ${\alpha}-Fe_{2}O_{3}$ 상이다.

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기계적분쇄-혼합공정에 의해 제조된 Bi2Te3 소결체의 열전특성 (Thermoelctric Propretries of Bi2Te3 Fabricated by Mechanical Grinding-Mixing Process)

  • 이근길
    • 한국분말재료학회지
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    • 제7권1호
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    • pp.6-11
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    • 2000
  • Two kinds of Bi2Te3 powders, pure Bi2Te3/2vol.%ZrO2, have been prepared by a mechanical grinding process process. Effect of mixing of the powders on thermoelectric of the sintered body has been investigated by measuring Seebeck Coeffcient, specific electric resistivity and thermal conductivity. With an increase in the weight fraction of the Bi2Te3/2vol.%ZrO2 powder from 0 to 40wt.%. Especially, the figure of merit of the mixedBi2Te3 sintered body increases and thereafter dedreases above 40wt.%. Especially. the figure of merit of the mixed Bi2Te3 sintered bodies with mixing of Bi2Te3/2vol.%ZrO2 powder increased about 1.3time in comparison with the value of the specimen before mixing. Mixing of two kinds of Bi2Te3 powders which have different theramal and electric propertries with each other seemed to be useful methob to increase the figure of merit of Bi2Te3 sintered body.

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Effects of Al2O3 Coating on BiVO4 and Mo-doped BiVO4 Film for Solar Water Oxidation

  • Arunachalam, Maheswari;Yun, Gun;Lee, Hyo Seok;Ahn, Kwang-Soon;Heo, Jaeyeong;Kang, Soon Hyung
    • Journal of Electrochemical Science and Technology
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    • 제10권4호
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    • pp.424-432
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    • 2019
  • Planar BiVO4 and 3 wt% Mo-doped BiVO4 (abbreviated as Mo:BiVO4) film were prepared by the facile spin-coating method on fluorine doped SnO2(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO4 film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al2O3 layer, the ultra-thin Al2O3 layer with a thickness of approximately 2 nm was deposited on BiVO4 film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO4 and Mo:BiVO4 films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al2O3 layer, the Al2O3 coated BiVO4 (Al2O3/BiVO4) film exhibited enhanced photoelectrochemical performance in 0.5 M Na2SO4 solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as VRHE) than BiVO4 film (0.12 mA/㎠ at 1.23 VRHE). Moreover, Al2O3 coating on the Mo:BiVO4 film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 VRHE) than the Mo:BiVO4 film (0.86 mA/㎠ at 1.23 VRHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO4 film and Al2O3/Mo:BiVO4 film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (VFB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al2O3 coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al2O3 layer.