• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.98-101
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• 2007

Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.83-89
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• 1998

The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.197.1-197
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.693-699
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• 2006

Textured $Bi_{0.5}(Na,K)_{0.5}TiO_3-BiFeO_3$ ceramics were prepared by the reactive-templated grain growth process, using platelike $Bi_4Ti_3O_{12}$ particles. The effects of chemical composition in $Bi_{0.5}(Na,K)_{0.5}TiO_3$ on texture development and densification were examined. Textured ceramics were obtained by using $Bi_{0.5}K_{0.5}TiO_3$ as an end member of the solid solution but densification was limited. Dense ceramics were obtained by using $Bi_{0.5}Na_{0.5}TiO_3$ but texture did not develop. Dense, textured ceramics were obtained by using $Bi_{0.5}(Na_{0.5}K_{0.5})_{0.5}TiO_3$.