• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1245-1246
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• 2006

We fabricated Bi-2212/$SrSO_4$ composite superconductors and evaluated the effects of the powder mixing method and melting temperature on their microstructure and superconducting properties. The Bi-2212 powders were mixed with $SrSO_4$ by hand-mixing (HM) and planetary ball milling (PBM) and then the powder mixtures were melted at $1100^{\circ}C{\sim}1200^{\circ}C$, solidified, and annealed. We found that the powder mixture prepared by PBM was finer and more homogeneously mixed than that prepared by HM, resulting in more homogeneous microstructure and smaller $SrSO_4$ and second phases after annealing.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.37-42
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• 2007

We are developing a 22.9 kV/25 MVA superconducting fault current limiting(SFCL) system for a power distribution network. A Bi-2212 bulk SFCL element, which has the merits of large current capacity and high allowable electric field during fault of the power network, was selected as a candidate for our SFCL system. In this work, we experimentally investigated important characteristics of the 190 kVA Bi-2212 SFCL element in its application to the power grid e.g. DC voltage-current characteristic, AC loss, current limiting characteristic during fault, and so on. Some experimental data related to thermal and electromagnetic behaviors were also compared with the calculated ones based on numerical method. The results show that the total AC loss at rated current of the 22.9 kV/25 MVA SFCL system, consisting of one hundred thirty five 190 kVA SFCL elements, becomes likely 763 W, which is excessively large for commercialization. Numerically calculated temperature of the SFCL element in some sections is in good agreement with the measured one during fault. Local temperature distribution in the190 kVA SFCL element is greatly influenced by non-uniform critical current along the Bi-2212 bulk SFCL element, even if its non-uniformity becomes a few percentages.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.259-260
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• 2006

This study was progressed to value of Bi2212 tubes uniformity depend on cooling conditions. The tube from 150 mm in length, 30 mm in O.D., 20 mm in I.D., 5 mm in thickness was combined with electrodes by 3 sections. The tube from 60, 70 mm in length, 30, 50 mm in O.D., 20.4, 40.4 mm in I.D., 4.8 mm in thickness was in controled of cooling rate by a heat exchanger. Bi2212 tubes were fabricated by Centrifugal Forming Process (CFP) and they were annealed at $840^{\circ}C$ for 80 h in oxygen atmosphere. The tube from 150 mm in length was analyzed by EFDLab of NIKA to show cooling rate and temperature distributions. When the tube was cooled for 100s, the temperature distributions was $663^{\circ}C$ in the middle, $500{\sim}647^{\circ}C$ in inlet, $598{\sim}647^{\circ}C$ in the other side. Electric characteristics from $I_c$ was 450 A in the middle, 650 A in inlet, 600 A in the other side. Electric characteristics by a heat exchanger showed the more fast cooling rate, the more high $I_c$.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.684-691
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• 1996

To enhance the formation of Bi,Sr,Ca,Cu,O,(Bi-2223) single phase in a shorter reaction time, the intermediate compounds such as Bi,Sr,CuO,(Bi-2201). BizSr,CaCuz08(Bi-2212) and (Ca, Sr,, ,9)CuOz in the Bi-Sr-Ca-Cu-0 system were used as the precursors. The formation of Bi-2223 was enhanced in the mixture of Bi-2201 and (Ca, ,,Sr, 119)C~eOsZpe,c ially from the mixture with (Ca, 9I Sr, ,,)CuO,-rich composition compared to Bi, iPb, 4Sr2Ca,Cu3010-cxo mposition. The formation of Bi- 2223 essentially completed within 60h at 860$^{\circ}$C and 870$^{\circ}$C. However, a small amount of the remnant Bi-2212 phase did not disappear even after a prolonged reaction at 870'C. The merit of the proposed synthetic method using the intermediate precusors can be summarized as a shorter reaction time for the formation of Bi-2223 phase, in addition to a smaller amount of second phases compared to the conventional solid-state reaction method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.49-52
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cased, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$ and it was distributed in the reeone.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.10-13
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• 2024

We performed angle-resolved Raman spectroscopy experiments on lead-doped and undoped Bi₂Sr₂CaCu₂O_8+δ(Bi2212) samples using a 660 nm laser and analyzed the Raman tensor of the phonon modes. The phonon mode was clearly observed at the 60, 103, and 630 cm^-1 Raman shifts. The 60, 630 cm^-1 peaks were only clearly observed when the incident and scattered light polarizations were configured to be parallel. The polarization angle dependence of the amplitude of the 60, 630 cm^-1 peak on the parallel configuration shows a twofold symmetry; therefore, both peaks originate from Ag phonons and the crystal structure of Bi2212 should be considered orthorhombic. On the other hand, the 103 cm^-1 peak is clearly observed in both parallel and perpendicular configurations. Remarkably, the off-diagonal component of the Raman tensor of the 103 cm^-1 peak showed an anti-symmetry that could not be realized within the known crystal structure of Bi2212. The implications of our findings are discussed.