• Korean Journal of Materials Research
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• v.8 no.5
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• pp.413-418
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• 1998

Electrical and Thermoelectric Properties of$ SbI_{3}$-doped 85% 85% $BiTe_{2}$$Se_{3}$ 단결정에서 전하 이동에 대한 살란인자는 0.1이었으며, 전자이동도와 정공이동도의 비($\mu_{e}$ /$\mu_{h}$ )는 1.45이었다. $SbI_{3}$의 첨가량이 증가할수록 전자 농도의 증가로 Seebek 계수와 전기비저항이 감소하며, Seebeck 계수와 전기비저항이 최대값을 나타내는 온도가 고온으로 이동하였다. $SbI_{3}$를 첨가한 85%$Bi_{2}$$Te_{3}$단결정에서 성능지수의 최대값은 $SbI_{3}$를 0.1 wt%첨가한 조성에서 $2.0 x 10^{-3}$ K이었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.135-139
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• 2015

$Bi_2Te_3-Bi_2Se_3$ alloy which is typical n-type thermoelectric material were grown by traveling heater method (THM) technique. We investigate the effect of the composition of $100-x(Bi_2Te_3)-x(Bi_2Se_3)$ and doping of n-type dopants such as $SbI_3$ and $CdCl_2$. Maximum figure of merit of $Bi_2Te_3-Bi_2Se_3$ alloy was observed with $CdCl_2$ 0.1 wt% (Z: $2.73{\times}10^{-3}/K$) and $SbI_3$ 0.05 wt% (Z: $2.29{\times}10^{-3}/K$). Deviation along the length of $Bi_2Te_3-Bi_2Se_3$ ingot grown by THM method is low, which indicates that the ingot is very homogenized. Also we observed the close relationship of between anisotropy ratio and dopant in the $90(Bi_2Te_3)-10(Bi_2Se_3)$ alloys. And we confirmed the fact that anisotropy ratio exerts thermoelectric performance in $Bi_2Te_3$ based n-type thermoelectric material.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1283-1293
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• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Journal of Powder Materials
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• v.23 no.2
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• pp.120-125
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• 2016

P-type ternary $Bi_{0.5}Sb_{1.5}Te_3$ alloys are fabricated via mechanical alloying (MA) and spark plasma sintering (SPS). Different ball sizes are used in the MA process, and their effect on the microstructure; hardness, and thermoelectric properties of the p-type BiSbTe alloys are investigated. The phases of milled powders and bulks are identified using an X-ray diffraction technique. The morphology of milled powders and fracture surface of compacted samples are examined using scanning electron microscopy. The morphology, phase, and grain structures of the samples are not altered by the use of different ball sizes in the MA process. Measurements of the thermoelectric (TE) transport properties including the electrical conductivity, Seebeck coefficient, and power factor are measured at temperatures of 300-400 K for samples treated by SPS. The TE properties do not depend on the ball size used in the MA process.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Journal of the Korean earth science society
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• v.22 no.3
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• pp.208-222
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• 2001

Geochemical investigations on suspended amorphous iron oxide material from the Kwangyang gold mine and its surrounding area, Cheonnam, Korea have been carried out. The sediments samples were collected from 11 location along Kwangyang mine area and were air dried and sieved to -80 mesh. These samples consist mainly of iron, silicon and alumina. The Fe$_2$O$_3$ contents ranges from 17.9 wt.% to 72.3 wt.%. The content of Fe$_2$O$_3$ increase with decreasing Si, Al, Mg, Na, K, Mn, and Ti, whereas the contents of Te, Au, Ga, Bi, Cd, Hg, Sb, and Se increase in the amorphous stream sediments. Amorphous stream sediments have been severely enriched for As (up to 54.9 ppm), Bi (up to 3.77 ppm), Cd (up to 3.65 ppm), Hg (up to 64 ppm), Sb (up to 10.1 ppm), Cu (up to 37.1 ppm), Mo (up to 8.86 ppm), Pb (up to 9.45 ppm) and Zn (up to 29.7 ppm). At the upstream site, the Au content (up to 4.4 ppm) in the amorphous stream sediments are relatively high but those contents decrease with distance of mine location. The content of Ag (up to 0.24 ppm) were low in upstream site but those contents increase significantly in the downstream sites. The X-ray diffraction patterns of the samples have virtually no sharp and discrete peaks, indicating that some samples are amorphous or poorly-ordered. The quartz, goethite, kaolinite and illite were associated in amorphous stream sediments. The infrared spectra for amorphous stream sediments show major absorption bands due to OH stretching, adsorbed molecular water, sulfate and Fe-O stretching, respectively.

• Journal of Powder Materials
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• v.24 no.2
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• pp.108-114
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• 2017

We fabricate fine (<$20{\mu}m$) powders of $Bi_{0.5}Sb_{1.5}Te_3$ alloys using a large-scale production method and subsequently consolidate them at temperatures of 573, 623, and 673 K using a spark plasma sintering process. The microstructure, mechanical properties, and thermoelectric properties are investigated for each sintering temperature. The microstructural features of both the powders and bulks are characterized by scanning electron microscopy, and the crystal structures are analyzed by X-ray diffraction analysis. The grain size increases with increasing sintering temperature from 573 to 673 K. In addition, the mechanical properties increase significantly with decreasing sintering temperature owing to an increase in grain boundaries. The results indicate that the electrical conductivity and Seebeck coefficient ($217{\mu}V/K$) of the sample sintered at 673 K increase simultaneously owing to decreased carrier concentration and increased mobility. As a result, a high ZT value of 0.92 at 300 K is achieved. According to the results, a sintering temperature of 673 K is preferable for consolidation of fine (<$20{\mu}m$) powders.

• Journal of Powder Materials
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• v.24 no.2
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• pp.115-121
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• 2017

In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.178-178
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• 2008

초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.