• 제목/요약/키워드: $Bi_{2}O_{2}$

검색결과 1,544건 처리시간 0.026초

융액 일방향 응고법에 의한 ${\gamma}$-$6Bi_2O_3$.$GeO_2$ 투명 다결정체의 제조 (Preparation of Transparent ${\gamma}$-$6Bi_2O_3$.$GeO_2$ Polycrystals by Unidirection Solidification of Melt)

  • 김호건;김명섭;류일환
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.567-573
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    • 1990
  • Solidification condition for preparing transparent ${\gamma}$-6Bi2O3.GeO2 polycrystals by unidirectional solidification of melt, were investigaetd and the properties of the polycrystals prepared were measured. The ${\gamma}$-6Bi2O3.GeO2 polycrystals showing transparency like a single crystal were obtained by the unidirectional solidification of ${\gamma}$-6Bi2O3.GeO2 melt at a solidification rate of 0.5mm/h under a thermal gradient of 12$0^{\circ}C$/cm. The transparent polycrystals obtained showed the same photoconduction and optical activity as the ${\gamma}$-6Bi2O3.GeO2 single crystals grown by Czochralski method. But the electro-optic effect of polycrystals was heterogeneous because the colummar ${\gamma}$-6Bi2O3.GeO2 crystals were not oriented to the particular crystallographic direction.

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정극 재료용 $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ 유리의 결정화 특성 (Crystallization properties of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ Glass for cathod material)

  • 손명모;이헌수;구할본;정인성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.311-315
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    • 2000
  • Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

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Co를 첨가한 $ZnO-Bi_2O_3-Sb_2O_3$ 바리스터의 소결 및 전기적 특성 (Sintering and the Electrical Properties of Co-doped $ZnO-Bi_2O_3-Sb_2O_3$ Varistor System)

  • 김철홍;김진호
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.186-193
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    • 2000
  • Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

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$SrTiO_3$(001) 단결정 위에 제조된 $SrBi_2(Ta,Nb)_2O_9$ 박막의 미세구조 (Microstructure of $SrBi_2(Ta,Nb)_2O_9$ Thin Films on $SrTiO_3$(001) Single Crystal)

  • 이지현
    • 한국세라믹학회지
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    • 제37권10호
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    • pp.1008-1013
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    • 2000
  • SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

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인상 육성한 $Bi_12GeO_20$ 결정내의 $Bi_4Ge_3O_12$석출상 (Exsolution of $Bi_4Ge_3O_12$ in $Bi_12GeO_20$ Crystals Grown by Pulling Method)

  • 이태근;정수진
    • 한국세라믹학회지
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    • 제28권12호
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    • pp.981-988
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    • 1991
  • Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.

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PDP Rib용 Bi2O3-B2O3-ZnO계 유리의 물성과 구조 (Properties and Structures of Bi2O3-B2O3-ZnO Glasses for Application in Plasma Display Panels Rib)

  • 진영훈;전영욱;이병철;류봉기
    • 한국세라믹학회지
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    • 제39권2호
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    • pp.184-189
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    • 2002
  • 본 연구는, PbO-base 유리계의 정보와의 비교 등을 통해 Bi-base 조성 PDP rib으로의 새로운 유리조성 설계를 위한 기초연구의 일환이다. PbO와 유사한 밀도값 및 작업 용이성을 갖고 있는 Bi를 도입한 $Bi_2O_3-B_2O_3-ZnO$ 조성계에 대해, 연화점, 열팽창계수, 에칭성, 유전율 등의 특성측정 및 XPS로 조성에 따른 구조변화 등을 조사하였다. $Bi_2O_3$를 50∼80 wt%까지 폭넓게 첨가된 $Bi_2O_3-B_2O_3-ZnO$계 유리들은 조성에 따라 연화점이 400∼480$^{\circ}C$, 열팽창계수가 $68{\sim}72{\times}10^{-7}/^{\circ}C$, 유전상수는 13∼25으로서 동조성의 Pb-base 조성계와 유사한 물성치를 나타내었다. 특히, Bi의 함유량이 70∼65 wt%의 조성의 경우, 성분 및 물성의 미세조정 등을 통해 rib 재료의 출발조성으로서 적용가능성이 확인되었다. $Bi_2O_3$의 양이 감소함에 따라 $O_{1s}$ peak에서의 결합에너지의 증가와 반가폭(FWHM)이 감소하였는데, 이는 비가교산소의 증가에 기인하였다.

${\gamma}$-$6Bi_2O_3$.$SiO_2$ 결정을 포함하는 복합다결정체의 작성 (Preparation of Composite Polycrystals Including ${\gamma}$-$6Bi_2O_3$.$SiO_2$)

  • 김호건
    • 한국세라믹학회지
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    • 제23권2호
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    • pp.13-20
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    • 1986
  • Composite polycrystals including ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystal which have needlelike regular structure are useful for the high resolution optical devices. For the purpose of obtaining the composite polycrystals described above the melts of eutectic composition in the three eutectic systems including $6Bi_2O_3$.$SiO_2$ composition were unidirectionally solidified at a rate of 0.05 and 0.25 cm/h under a thermal gradient of 10$0^{\circ}C$/m. Composite polycrystals of relatively regular structure in which needlelike ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystals were arrayed in parallel with $2Bi_2O_3$.$B_2O_3$ crystal matrix were obtained when the eutectic melt of $6Bi_2O_3$.$SiO_2 -2Bi_2O_3$.$B_2O_3$ system was solidified at a rate of 0.25 cm/h. Partial structural irregularity however was found in the obtained composite polycrystals.

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Role of the $Bi_2O_3\;in\;SrBi_2TaNbO_9/Bi_2O_3/SrBi_2TaNbO_9$ Heterostructure and Low Temperature Annealing Property

  • Park, Yoon-Beak;Jang, Se-Myeong;Kim, Ju-Hyung;Lee, Jeon-Kook;Park, Jong-Wan
    • The Korean Journal of Ceramics
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    • 제6권3호
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    • pp.276-279
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    • 2000
  • Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

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Sheath Heater 모듈 실링용 B2O3-ZnO-Bi2O3계 유리소재 및 첨가제에 따른 물성 변화 (Effect of an Additive on the Physical and Electrical Properties of the B2O3-ZnO-Bi2O3 Glass System for a Sheath Heater Module)

  • 최진삼;신동우;배원태
    • 한국세라믹학회지
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    • 제50권1호
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    • pp.57-62
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    • 2013
  • We investigated the thermal and electrical properties of the $B_2O_3-ZnO-Bi_2O_3$ glass system as a sealing material in sheath heater modules. A composition with over 90 wt% $Bi_2O_3$ in the $B_2O_3-ZnO-Bi_2O_3$ system was glassified by controlling the cooling rate. The glass transition temperature and thermal expansion coefficient in bismate glass could be controlled by the minor ingredients of ZnO, $SiO_2$, $BaO_2$, and $K_2O$. The $B_2O_3-ZnO-Bi_2O_3$ glass system bonded well to metal, and bismate glass insulating properties were comparable to those of bismate glass $B_2O_3-ZnO-PbO$ glass system in a sheath heater module.

$Zn_7Sb_2O_{12}$ 첨가량이 ZnO 바리스터의 입자성장과 미세구조에 미치는 영향 (Effect of $Zn_7Sb_2O_{12}$ Content on Grain Growth and Microstructure of ZnO Varistor)

  • 김경남;한상목
    • 한국세라믹학회지
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    • 제30권11호
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    • pp.955-961
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    • 1993
  • Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.

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