• Korean Journal of Materials Research
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• v.2 no.1
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• pp.12-18
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• 1992

The trap levels of ZnO-based varistor are obtained by Isothermal Capacitance Transient Spectroscopy method. Here ICTS measuring system consists of YHP 4192A Impedance Analyzer and a personal computer for the data acquisition. Between $-40^{\circ}C$ and $60^{\circ}C$, the grain boundary trap levels of 0.48 and 0.94eV were detected for $ZnO-Bi_2O_3-MnO$ system. The hole omission spectra are observed in the case of the addition of CoO into the $ZnO-Bi_2O_3$ system, while the electron emission spectra are detected in the case of the addition of MnO. The nonlinear resistance coefficient $\alpha$ increases with the decrease of the dormer concentration. Finally, the trap level density of $ZnO-Bi_2O_3-MnO$ system is found to decrease with the amount of CoO, while $\alpha$ is found to increase with the amount of CoO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1323-1330
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• 2021

This work reported the radiation shielding characteristic of the bismuth titanium vanadium sodium tellurite glass system. The density of the specially-developed glass samples was increased from 2.21 to 4.01 g/cm³ with the addition of Bi₂O₃, despite the fact the molar volume is decease within 85.43-54.79 cm³/mol. The WinXcom program was used to approximate the effect of Bi₂O₃ on the gamma radiation shielding parameters of bismuth titanium vanadium sodium tellurite glasses. The ㎛ values decrease with the increase of Bi₂O₃ concentration. The computed data shows that the glass sample with 20 mol.% of Bi₂O₃ content has the greatest radiation attenuation performance in comparison to other selected glasses. The Bi₂O₃-TiO₂-V₂O₅-Na₂O-TeO₂ glass system shows excellent neutron shielding material with high long-term light transmittance and discharge resistance and could be potentially used as transparent radiation-resistant shielding glass applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.478-481
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• 2002

We carried out the experiments for fabricating $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$(Bi2223) superconductor thick films on Cu tapes. Cu-free (Bi,Pb)-Sr-Ca-0 powder mixtures were screen- printed on Cu tapes and heat-treated at 840-$860^{\circ}C$ for several minutes in air. Surface microstructures and phases of films were analyzed by XRD and optical microscope. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the printing layers were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure, it is thought that Bi2223 superconducting particles nucleate at interfaces between Bi2212 phase and liquid.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.638-644
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• 2008

The effects of $Nb_2O_5$ and $MnO_2$ on the positive temperature coefficient of resistivity (PTCR) behavior of lead-free $Ba_{0.99}(Bi_{1/2}Na_{1/2})_{0.01}TiO_3$ (BaBiNT) ceramics were investigated in order to fabricate a PTC thermistor available at high temperature of > $120^{\circ}C$. In particular, 0.05 mol% $Nb_2O_5$ added BaBiNT ceramic, which has significantly increased Curie temperature (Tc) of $160^{\circ}C$, showed good PTCR behavior; low resistivity at room temperature $(\rho_r)$ of $80.1{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $5.65{\times}10^3$ and a large resistivity temperature factor (a) of 18.5%/$^{\circ}C$. Furthermore, the improved $\rho_{max}/\rho_{min}$ of $6.48{\times}10^4$ and a of 25.4%/$^{\circ}C$ along with higher $T_c$ of $167^{\circ}C$ despite slightly increased $\rho_r$ of $569{\Omega}{\cdot}cm$, could be obtained for the BaBiNT + 0.05 mol% $Nb_2O_5$ + 0.02 wt% $MnO_2$ ceramic cooled down at a rate of $200^{\circ}C/h$.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.3011-3015
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• 2009

Structural and thermo-analytical studies were carried out to understand the phase formation kinetics of the single phase $Bi_5Ti_3FeO_{15}$ (BTFO) nanocrystals in $Bi_2O_3-Fe_2O_3-TiO_2$, during the polymerized complex (PC) synthesis method. The crystallization of Aurivillius phase $Bi_5Ti_3FeO_{15}$ layered perovskite was found to be initiated and achieved under the temperature conditions in the range of ${\sim}$800 to 1050$^{\circ}C$. The activation energy for grain growth of $Bi_5Ti_3FeO_{15}$ nanocrystals (NCs) was very low in case of NCs formed by PC (2.61 kJ/mol) than that formed by the solid state reaction (SSR) method (10.9 kJ/mol). The energy involved in the phase transformation of Aurivillius phase $Bi_5Ti_3FeO_{15}$ from $Bi_2O_3-Fe_2O_3-TiO_2$ system was ${\sim}$ 69.8 kJ/mol. The formation kinetics study of $Bi_5Ti_3FeO_{15}$ synthesized by SSR and PC methods would not only render a large impact in the nanocrystalline material development but also in achieving highly efficient visible photocatalysts.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.826-834
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• 2004

In this paper, we fabricated thick film monopole antennas using Bi$_2$O$_3$-doped BaTi$_4$$O_{9}$ ceramics for small size and broadband intenna. In the result, the high permittivity was fixed and the quality factor was also significantly decreased by the formation of secondary phase of Bi$_4$Ti$_3$O$_{12}$ repleced by addtion Bi. The antenna property influenced by the quality value more than the permittivity. The bandwidth of antenna was increased to 33 %. On the other hand, the gain was reduced to -4.3 dBi. Also radiation patterns were showed low dBi value by increasing of dielectric loss. Specially, Measured x-y plane radiation patterns was distorted as the dispersion of wavelength and high permittivity difference. But the result is showed execellent bandwidth because of low quality value in all formation range.nge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.349-358
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• 2000

Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.