• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.79-85
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• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.593-600
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• 2021

Herein, a series of g-C₃N₄ modified Bi₂MoO₆ nanocomposites using Bi₂MoO₆ and melamine as original materials are fabricated via sintering process. For presynthesis of Bi₂MoO₆ an ultrasonic-assisted hydrothermal technique is researched. The structure and composition of the nanocomposites are characterized by Raman spectroscopy, X-ray diffraction (XRD), and high-resolution field emission scanning electron microscopy (SEM). The improved photoelectrochemical properties are studied by photocurrent density, EIS, and amperometric i-t curve analysis. It is found that the structure of Bi₂MoO₆ nanoparticles remains intact, with good dispersion status. The as-prepared g-C₃N₄/Bi₂MoO₆ nanocomposites (BMC 5-9) are selected and investigated by SEM analysis, which inhibits special morphology consisting of Bi₂MoO₆ nanoparticles and some g-C₃N₄ nanosheets. The introduction of small sized g-C₃N₄ nanosheets in sample BMC 9 is effective to improve the charge separation and transfer efficiency, resulting in enhancing of the photoelectric behavior of Bi₂MoO₆. The improved photoelectronic behavior of g-C₃N₄/Bi₂MoO₆ may be attributed to enhanced charge separation efficiency, photocurrent stability, and fast electron transport pathways for some energy applications.

• Progress in Superconductivity and Cryogenics
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• v.1 no.1
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• pp.7-14
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• 1999

Wekk oriented $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ suppercondcting thick films were fabricared on copper tape by LiReac-PreCu (liquid reaction between a Cu-free precousor and Cu tape) method. Cu-free precursor power which is composed of $Bi_{2}Sr_{2}Ca_{5}$ was printed on a copper tape by screen printing and was heat-treated. The speciment were partially in a molten state at the heat treatment temperature (85$0^{\circ}C$~87$0^{\circ}C$). The heat heat treatments for the reaction were performed in air or low oxygen pressure in several stages. XRD analyses of the resulting Bi2Sr2CaCu2O8 superconducting tapes show that the $Bi_{2} Sr_{2} CaCu_{2} O_{8}$ phase is dominant and a small amount of $Bi_{2} Sr_{2} Cu_{2} O_{6}$ phase is detected. Both phases are aligned in the c-axis direction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.67-70
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• 2008

$Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) fabricated by sol-gel and vacuum sealed annealing process. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) have been studied by x-ray diffraction(XRD), vibrating sample magnetometer, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The determined lattice constants $a_0$ of x = 0, and 1 are $12.497\AA$, and $12.465\AA$, respectively. The distribution of gallium and iron in $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ is studied by Rietveld refinement. Based on Rietveld refinement results, the terbium and bismuth ions occupy the 24c site, iron ions occupy the 24d, l6a site, and nonmagmetic gallium ions occupy the 16a site. In order to verify the magnetic site occupancy of iron and gallium, we have taken $M\ddot{o}ssbauer$ spectra for $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) at room temperature. From the results of $M\ddot{o}ssbauer$ spectra analysis, the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 60.8 % and 39.2 %, respectively, and the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 74.7 % and 25.3 %, respectively. It is noticeable that all of the nonmagnetic Ga atoms occupy the 16a site by vacuum annealing process.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.558-567
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• 2001

본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.878-885
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• 2012

In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.113-117
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• 1999

SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were fabricatcd with different Sr/Bi ratios by MOD. SBT thin films of thickness 2500$\AA$ deposited on Pt/Ti/SiO$_2$/Si were crystallized at $700^{\circ}C$ ~85$0^{\circ}C$ using RTA method. As the Sr/Bi ratio was decreased, dielectric constant and remanent polarization were increased. SrBi$_2$Ta$_2$$O_{9}$ showed a maximum dielectric constant value of $\varepsilon$$_{r}$= 268, and maximum remanent polarization (2Pr) of ~9.86 $\mu$C/$\textrm{cm}^2$ when annealed at 8$0^{\circ}C$ for 8 min.min.n.