• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.175.1-175
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.346-347
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• 2006

기계적 품질계수(Qm)를 향상시키기 위해 $Y_2O_3$와 $MnO_2$를 첨가함에 따른 $SrBi_2Nb_2O_9$ 세라믹스의 강유전 특성을 알아보았다. 합성분말의 입도를 분석 한 결과 $SrBi_2Nb_2O_9$의 경우 781.27nm였고, $Y_2O_3$와 $MnO_2$를 첨가한 경우 각 각 830.4nm와 981.1nm로 particle size는 증가하였고, 소결 후 소결밀도는 차이가 거의 없었으며, grain size는 $SrBi_2Nb_2O_9$과 $Y_2O_3$를 첨가했을 경우 $1{\mu}m$이하이며 반면, $MnO_2$를 첨가하였을 때 결정립이 성장하여 $3{\sim}4{\mu}m$로 나타났다. 또한, 모두가 $450^{\circ}C$ 이상의 상전이온도를 갖았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.646-649
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• 2002

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.77-77
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• 2009

$Pb(Zr,Ti_O_3$계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어 $1000^{\circ}C$에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서 $(Bi_{1/2}Na_{1/2})TiO_3$나 Tungsten-Bronze type, $(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한 $(K_{1/2}Na_{1/2})NbO_3(NKN)$은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로 $BaTiO_3$, $LiTaO_3$, Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의 $(K_{1/2}Na_{1/2})NbO_3(NKN)$세라믹스에서 낮은 용융온도 때문에 소결하기 어려운 $KNbO_3$를 제거한 $NaNbO_3$에 $LiNbO_3$와 $BaTiO_3$를 추가한 $NaLiNbO_3-BaTiO_3$세라믹스에 $K_4CuNb_8O_{23}$(KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Korean Journal of Materials Research
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• v.7 no.9
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• pp.723-727
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• 1997

Nd치환이 Ag의 용융점 이하인 94$0^{\circ}C$에서 소결한 $Bi_{1-x}$$Nd_{x}$N$bO_{4}$세라믹스의 소결거동과 마이크로파 유전특성에 미치는 영향을 연구하였다. Nd치환량(x)이 증가함에 따라 사방점에서 삼사정으로 변하는 양이 증가하였고 결정립의 크기, 겉보기밀도, 유전상수는 감소하였다. Q$xf_{0}$값은 Nd 치환량이 0.025mole 이하의 경우 큰 변화가 없으나, 그 이상에서는 증가하여 0.1mol일 때 최고값을 보이고 다시 급격히 감소하였다. TCF값은 Nd치환량이 증가할수록(+)방향으로 증가하였다. 가장 우수한 마이크로파 유전특성은 Nd 치환량이 0.025mole일 때 얻어졌으며, 이때 유전상수는 43.7, Qxf/ sub 0/값은 11,046GHz, TCF값은 -1.82ppm/$^{\circ}C$이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.216-217
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• 2005

In this paper, in order to develop Pb-free piezoelectric ceramics, $(Li_{0.05}Na_{0.57}K_{0.38})NbO_3$ ceramic was fabricated with the variation of $Bi_2O_3$ addition. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum kp value at.0.2 wt% $Bi_2O_3$ addition. Qm of $Bi_2O_3$ added ceramics showed lower values than the non-added ceramics, however, the kp was increased by the addition of $Bi_2O_3$ up to 0.2 wt%. At the sintering temperature of 1110$^{\circ}C$ and the calcination temperature of 850$^{\circ}C$, the optimal values of density=4.52g/$cm^3$, kp=0.47, $\varepsilon_r$=400 were obtained.