• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.141-142
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• 2006

Thermoelectric properties and microstructures of $Sr_{8-x}Ba_xGA_{16}Ge_{30}$ alloys fabricated by the arc-melting method were investigated. The alloys with the nominal composition of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were the single-phase alloys, while those of $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were two-phases alloys. Electrical resistivity and the Seebeck coefficient for both two-phases alloys were higher in magnitude than those of the single-phase alloys between room temperature and 873K The thermal conductivities for both two-phase alloys were reduced with respect to those of the single-phase alloys in the whole temperature range. The maximum values of ZT for $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were achieved with the values of 0.69 at 753K and 0.51 at 754K, respectively, while those of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 758K and 0.76 at 943K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.143-144
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• 2006

Thermoelectric properties of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ clathrates were investigated in the temperature range between 323K and 923K. Both clathrates were fabricated by the arc-melting method. Homogeneous single phases were observed in the annealed clathrates. Electrical resistivities for both clathrates were increased as the temperature increased up to 823K. The sign of the Seebeck coefficients for both clathrates was negative, which means that the major carriers were electrons. The maximum values of ZT for $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 773K and 0.76 at 923K, respectively.