• Resources Recycling
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• v.26 no.6
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• pp.29-37
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• 2017

Nuclear fuel cladding tube is fabricated by pilgering and annealing process. In order to remove impurity and oxygen layer on the surface, pickling process is carried out. When Zirconium(Zr) is dissolved and saturated in acid solution during the pickling process, all the waste acid including Zr is disposed. Therefore, $BaF_2$ is added into the waste acid to extract Zr and $Ba_2ZrF_8$ is subsequently formed. To recycle Zr by electrowinning process, $Ba_2ZrF_8$ is used as electrolyte, but it has high melting point ($1053^{\circ}C$). $ZrF_4$ should be added into $Ba_2ZrF_8$ to decrease the melting point. In this paper, it was investigated that $Ba_2ZrF_8$ was separated to $BaF_2$ and $ZrF_4$ by vacuum distillation. Firstly, $BaF_2$ with different particle size ($1{\mu}m$, $35{\mu}m$, $110{\mu}m$) was added into the waste acid and the respective precipitation property was estimated. $BaF_2$ obtained by vacuum distillation was shattered by ball-milling with different time. The precipitation efficiency was compared with $1{\mu}m$ of ${BaF_2}^{\prime}s$ one, which was not used as precipitation agent.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.672-678
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• 2017

In the production of zirconium cladding tube, a pickling acid solution is used to remove surface contaminants, which generates tons of pickling acid waste. The waste pickling solution is a valuable resource of Hf-free Zr. Many studies have investigated separating the Hf-free Zr source from the waste pickling acid. The results showed that $Ba_2ZrF_8$ precipitates prepared from the waste pickling acid were useful as an electrolyte for the electrorefining of Zr in molten salt. In the present work, electrorefining was performed in a $Ba_2ZrF_8-LiF$ binary electrolyte to recover Zr from a Hf-free CuZr ingot anode prepared by electroreduction. Before electrorefining, two pretreatments are performed. First, electrolyte melting was carried out to determine the eutectic temperature, and second, the electrolyte was treated to eliminate impurities, mainly hydride. After electrorefining, the cathode deposits were analyzed by $O_2$ gas analyzer and SEM-EDX to explore the possibility of recovering nuclear-grade Zr metal. Moreover, the anode was analyzed by SEM-EDX to determine the Zr dissolution depth.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.681-687
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• 2016

Zirconium(Zr) nuclear fuel cladding tubes are made using a three-time pilgering and annealing process. In order to remove the oxidized layer and impurities on the surface of the tube, a pickling process is required. Zr is dissolved in HF and $HNO_3$ mixed acid during the process and pickling waste acid, including dissolved Zr, is totally discarded after being neutralized. In this study, the waste acid was recycled by adding $BaF_2$, which reacted with the Zr ion involved in the waste acid; $Ba_2ZrF_8$ was subsequently precipitated due to its low solubility in water. It is very difficult to extract zirconium from the as-recovered $Ba_2ZrF_8$ because its melting temperature is $1031^{\circ}C$. Hence, we tried to recover Zr using an electrowinning process with a low temperature molten salt compound that was fabricated by adding $ZrF_4$ to $Ba_2ZrF_8$ to decrease the melting point. Change of the Zr redox potential was observed using cyclic voltammetry; the voltage change of the cell was observed by polarization and chronopotentiometry. The structure of the electrodeposited Zr was analyzed and the electrodeposition characteristics were also evaluated.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1042-1045
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• 2001

Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.252-261
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• 1994

The $(Ba_{1-X}Sr_X)ZrO_3$ powder showing chemically pure and fine particle size was attempted to be synthesized by the oxalate method. The objective of this study is to determine the optimum synthesis condition of stable $(Ba_{1-X}Sr_X)ZrO_3$ powder in terms of the temperatures coefficient of resonant frequency ${\tau}_f$ by examining the microstructure and dielectric properties of the synthesized powder. The six compounds (x=0, 0.2, 0.4, 0.6, 0.8, 1) of $(Ba_{1-X}Sr_X)ZrO_3$ were prepared by the oxalate method, and then calcined at $1000^{\circ}C$ to obtain the crystalline $(Ba_{1-X}Sr_X)ZrO_3$ powder. The synthesized powder showed the globular-shape and average particle size of less than $0.2 \mu\textrm{m}$. The composition of x=0.5, i.e., half of Ba was replaced by Sr, is experted to show the zero value of temperatures coefficient of capacitance ${\tau}_c$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.