• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.114-118
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• 2015

$V_2O_5-P_2O_5-ZnO-Sb_2O_3$ glasses modified with BaO and $Al_2O_3$ are synthesized as a sealing material for large-scale dye-sensitized solar cells (DSSCs). A compositional study is performed in order to determine the glass that can be sintered below $500^{\circ}C$ with a high chemical stability against the electrolyte. The flow size of the glasses after the heat treatment and the glass stability are increased with the addition of $Al_2O_3$ and BaO, while the glass transition temperature is decreased. After the reaction with the electrolyte at $60^{\circ}C$ for 72 h, the addition of 5 mol% of BaO and 2 mol% of $Al_2O_3$ considerably enhances the chemical stability of the glass. X-ray diffraction (XRD) and scanning electron microscope (SEM) are used to examine the reaction between the electrolyte and glasses. The structural contribution of the additives is also investigated and discussed.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.81-85
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• 2004

High T$\_$c/ (Sm/Y)$\_$1.8/Ba$\_$2.4/Cu$\_$3.4/O$\_$7-$\delta$/ ［(Sm/Y)］ superconductor, a combination of Y and Sm(50% each), was systematically investigated by the zone melt growth process. A sample prepared by this method showed well-textured microstructure, and (Sm/Y)$_2$BaCuO$\_$5/［(Sm/Y)211］inclusions were uniformly dispersed in large (Sm/Y)Ba$_2$Cu$_3$O$\_$y/ ［(Sm/Y)123］matrix. The sample showed a sharp superconducting transition at 91 K. The magnetization measurements of the (Sm/Y)1.8 sample exhibited the enhanced flux pinning, compared with Y$\_$1.8/Ba$\_$2.4/Cu$\_$3.4/O$\_$7-$\delta$/(Y1.8) sample without Sm. Critical current densities of (Sm/Y) 1.8 sample was 3.5${\times}$10$^4$A/$\textrm{cm}^2$ at 1 T and 77 K.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.915-920
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• 2004

The main phase of $BaTi_{4}O_9$-based ceramics was transformed to $BaTi_{5}O_{11}$ caused by the sintering with borosilicate glass, which was analyzed by using XRD and TEM. We considered that the phase change from $BaTi_{4}O_9$-based ceramics to the Ti-rich $BaTi_{5}O_{11}$ phase resulted from borosilicate glass selective absorbing of Ba ions from the $BaTi_{4}O_9$. In these results, we found a dependence on the amounts of the glass frits and the annealing temperature, and the phase change is also dependent of the main phases of $Ba_{4}Ti_{13}O_{30},\;and\;Ba_{2}Ti_{9}O_{20}$, which are involved in the $BaO-TiO_2-based$ Ti-rich region. In the case of sintering of middle- and high- permittivity material with additional glass frits for middle- and high- dielectric coefficients LTCC composition, control of weight fraction of the glass frits accompanying low-temperature sintering property with appropriate phase change is required.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.125-129
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• 2005

Ba-Ferrite thin films were prepared on $A1_2O_3$ substrate by a pulsed laser deposition system and characterized by SEM, $M\ddot{o}$ssbauer spectroscopy and VSM. The appropriate conditions of pulsation in Ba-ferrite was the oxygen pressure of 0.1 Torr at a substrate temperature of $400^{\circ}C$ and the thickness was variable with the deposition time. Ba-ferrite crystals had the forms of hexagonal plate in the 5 minute deposited film and the needle grains coexisted with the increasing film thickness. $M\ddot{o}ssbauer$ spectroscopy assured that the direction of atomic spin in Fe ion tends to normal to the substrate in the hexagonal plate. The VSM curves have the two types hysteresis of hexagonal and needle phase.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.136-144
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• 1999

Crystal structures of tungsten-bronze type microwave dielectric ceramics, $BaOLa_2O_34TiO_2$ (BLT) and $BaO(Nd_{0.77}Y_{0.23})_4TiO_2$ (B(NY)T), were analysed using the Rietveld method. The most relibale refinement was obtained by refining the cation and anion positions from the x-ray and neutron diffraction data, respectively. The ambiguites inherent in the refined crystal structure by Mateeva et al. were resolved. The $BaORe_2O_34TiO_2$ structure consiste of $3\times2$ perovskite blocks and 4 pentagon-channels. The Ti-O6 octahedrons are distroted and tilted, which, consequently, induces the displacements of Ba and Re ions producing the superlattics (c$\approx$ 7.6 $\AA$). The B(NY)T showed more severely tilted Ti-O6 octahedrons. The relative dielectric constant $\varepsilon_{\gamma}$ and temperature coefficient $\tau_\varepsilon$ are 109.5 and-$180 ppm/^{\circ}C$ in BLT, 76 and $+40 ppm/^{\circ}C$ in B(NY)T, respectively. The small Re ions produced a positive $\tau_\varepsilon$. The relation between $\tau_\varepsilon$ and the octahedron tilting in complex perovskite is discussed for the tungsten bronze type structure.